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  • 1
    Electronic Resource
    Electronic Resource
    Heparininduzierte Gerinnungsstörung durch maschinelle Autotransfusion (1998)
    Springer
    Der Anaesthesist 47 (1998), S. 979-981 
    Details
    ISSN: 1432-055X
    Keywords: Schlüsselwörter Maschinelle Autotransfusion ; Gerinnungsstörung ; Heparin ; Key words Autotransfusion ; Disorders of haemostasis ; Heparine
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Abstract Disorders in blood coagulation during the use of autotransfusion have been reported in recent literature. We wondered whether or not heparine, remaining in the prepared sample of retransfusion blood might be responsible for these disturbances. Methods: Therefore we created a setting in which heparine was added to animal blood in order to imitate clinical situations during the use of the CELL SAVER. Results: According to our results the blood shows no irregular heparine load as long as the machine is used following the operating instructions. But if the volume of rinsing liquid is decreased or the pumpflow is increased, the heparine load is increased enormously (Table 1). Conclusions: If the CELL SAVER is used with reduced volume of rinsing liquid or higher velocity of the pump, the coagulation status of the patient has to be monitored meticously.
    Notes: Zusammenfassung Gerinnungsstörungen bei der Anwendung der maschinellen Autotransfusion (mAT) werden in der neueren Literatur beschrieben. Wir untersuchten Tiervollblut mit der Frage, ob Heparin im aufgearbeiteten Retransfusionsblut (RTB) ursächlich dafür verantwortlich sein kann. Methoden: In unserem Versuchsaufbau mischten wir Heparin mit Tierblut, um den klinischen Gebrauch des Cell Savers zu imitieren. Ergebnisse: Dabei zeigte sich, daß es bei Benutzung des Cell Savers gemäß der Bedienungsanleitung zu keiner Heparinbelastung des RTB kommt. Wird jedoch das Waschvolumen vermindert und oder die Pumpengeschwindigkeit erhöht, kommt es zu einer deutlichen Heparinbelastung des RTB (Tabelle 1). Zusammenfassung: Wenn der Cell Saver mit reduziertem Waschvolumen und erhöhter Pumpengeschwindigkeit benutzt wird muß der Gerinnungsstatus des Patienten sorgfältig monitorisiert werden.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s001010050655
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  • 2
    Electronic Resource
    Electronic Resource
    Depth profiling of Co/Ti – silicide films using total reflection X-ray fluorescence (TXRF) spectrometry combined with low energy ion beam etching (IBE) for sample preparation (1998)
    Springer
    Fresenius' journal of analytical chemistry 361 (1998), S. 625-627 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Solid state phase epitaxy (SSPE) by rapid thermal processing (RTP) of Co/Ti double layers deposited on (100)-Si substrates is a common technique for the production of buried CoSi2-silicide conducting layers for microelectronics technology. The understanding of the processes during the SSPE silicide formation on the atomic scale needs the study of the elemental depth distributions with nanometer scale depth resolution of all multi-layer elemental constituents at different RTP conditions. A new experimental technique, the laterally resolved TXRF analysis line scan method across the bevelled section of the sample prepared by ex-situ ion beam sputter etching, was used to obtain the multi-element depth profiles. First results on the as evaporated Co/Ti (30 nm thick) double layer system prior to the RTP and on the final CoSi2/TixCoySiz-system (160 nm thickness) after the RTP were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160050971
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  • 3
    Electronic Resource
    Electronic Resource
    Diagnosis and treatment of vulvar carcinoma in situ with anal involvement in young women (1986)
    Springer
    Archives of gynecology and obstetrics 239 (1986), S. 115-122 
    Details
    ISSN: 1432-0711
    Keywords: Vulvar carcinoma in situ ; Anal carcinoma in situ ; Recurrence rates ; Skinning vulvectomy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The diagnostic procedure and therapy of carcinoma in situ of the vulva and the anal region are presented by reporting two cases of young women. The rising incidence of the multifocal lesions with a high recurrence rate after treatment is discussed and the relevant literature is reviewed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02133970
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  • 4
    Electronic Resource
    Electronic Resource
    MYCOTOXINS PRODUCED BY FUNGI ISOLATED FROM INSHELL PECANS (1974)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 39 (1974), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1974.tb01027.x
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  • 5
    Electronic Resource
    Electronic Resource
    Interstitial nitrogen induced by low-energy ion beam nitridation of AIII–BV semiconductor surfaces (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6066-6069 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nitridation of GaAs, InAs, and InSb by low-energy N2+ ion bombardment at room temperature was studied by near-edge x-ray absorption fine structure (NEXAFS) and x-ray photoelectron spectroscopy measurements. The formation of thin surface nitride layers, consisting mostly of GaN or InN but also containing minor amounts of mixed nitrides, was observed. Besides the nitride-related features, sharp peaks in the NEXAFS due to π* resonance at 401.0 eV and correlated peaks at 403.8 eV in N 1s core level spectra were detected. Both spectral features could be assigned to the presence of interstitial nitrogen, most likely molecular nitrogen. It was found that the amount of interstitial nitrogen in the surface layer strongly depends on the AIII–BV semiconductor system and may be affected by modification of the conditions during low energy ion bombardment. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415765
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  • 6
    Electronic Resource
    Electronic Resource
    Ferrimagnetic resonance linewidth in single-crystal Mn-doped Ba2Zn2Fe12O22 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5524-5526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ferrimagnetic resonance linewidths in single crystals of Mn-doped Ba2Zn2Fe12O22 were measured as a function of frequency (0.01–40 GHz) and temperature (4–300 K). In addition, the saturation magnetization, g factor, and planar anistropy fields were measured. The field linewidth ΔH appears to scale with frequency; however, the field linewidth as a function of temperature for the hexaferrite exhibits maxima. The temperature-dependent resonant field values were used to calculate the anisotropy field as a function of temperature. These measurements were performed in a frequency-swept slot-coplanar device at a fixed value of applied magnetic field and in a traditional ferrimagnetic resonance system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345872
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  • 7
    Electronic Resource
    Electronic Resource
    A modified broad beam ion source for low-energy hydrogen implantation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1499-1504 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A modified broad beam ion source for low-energy hydrogen ion implantation of semiconductors is described. Based on a Kaufman type ion source two different solutions are presented: (a) an ion source with an extraction system consisting of two molybdenum grids with a low gas flow conductance reworked for hydrogen operation, and (b) a ten-grid mass separating ion beam system which enables the mass selection of H+, H2+, and H3+. The ion energy could be set in the range of 200–500 eV with a current density reaching from 1 to 100 μA/cm2. It is shown that at higher pressure the main ion created in the ion source is H3+ due to ion-molecule processes, whereas at lower pressure only H2+ and H+ are produced. Special consideration is given to the ion beam analysis of the two grid ion source operating in the 10−3 mbar range allowing to explain the different peak structures by the potential distribution across the ion source and different charge transfer processes. In addition, the analysis reveals neutral and ionized collision products in the ion beam. The ten-grid mass separating ion source could be operated in the 10−4 mbar range resulting in a nearly collision free ion beam which permits the generation of a mass separated hydrogen ion beam. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148786
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  • 8
    Electronic Resource
    Electronic Resource
    Ion beam etching induced structural and electronic modification of InAs and InSb surfaces studied by Raman spectroscopy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8378-8385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The modification of the structural and electronic properties of InAs and InSb surfaces induced by low-energy N2 and Ar ion beam etching (IBE) were investigated as a function ion energy (≤500 eV) using Raman spectroscopy. A drastic enhancement of the electron concentration in the near surface region of both materials independent of the ion energy and the process gas was observed. From Raman measurements in different polarization configurations it can be concluded that the electron accumulation observed after IBE is inherently related to the process-induced structural defects. The degree of structural damage and the carrier concentration in the near surface region increase for higher ion energies. By controlled, subsequent removal of the damaged surface layer using wet etching, the depth profile of the structural and electronic damage in InAs was determined. This procedure reveals that the structural and electronic damage extends about 100 nm into the material. Nevertheless, it can be recognized that the utilization of N2 as the etching gas is associated with a lower degree of damage and also a lower electron accumulation at the surface of both InAs and InSb. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370685
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  • 9
    Electronic Resource
    Electronic Resource
    Anisotropic dielectric function spectra from single-crystal CuInSe2 with orientation domains (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 195-197 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anisotropic optical constants of slightly In-rich CuInSe2 are determined on the (112) surface of a naturally grown single-crystal sample with orientation domains using generalized spectroscopic ellipsometry for photon energies between 0.8 and 4.5 eV. Orientation domains within the sample, revealed by electron diffraction investigation, cause biaxial response of the sample surface. The CuInSe2 dielectric functions are extracted at each wavelength rigorously considering orientation domains and surface roughness effects, and improve previous results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334354
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  • 10
    Electronic Resource
    Electronic Resource
    Measurement of the depth distribution of ion beam etching-induced damage in AlGaAs/GaAs multiple quantum well structure (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1362-1364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect depth distribution caused by a 500 eV nitrogen ion beam etching (IBE) of an Al0.35Ga0.65As/GaAs multiple quantum well (MQW) structure was investigated by confocal photoluminescence (PL) measurements on a beveled section of the sample. The beveled section with an extremely small inclination angle necessary for the high depth resolution was fabricated by the IBE itself. Compared to other ion beam or plasma assisted etching processes reported, e.g., Ar-IBE, the 500 eV nitrogen IBE yields a very low defect density. A model including diffusion effects for the description of the profile gives a value of 4×10−15 cm2 /s for the defect diffusion coefficient. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119894
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