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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 138 (Mar. 2008), p. 367-376 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: To investigate the influence of stress on reactive diffusion, a remarkably clear experimenthas been designed. Thin film Al/Cu/Al and Cu/Al/Cu triple layers are deposited on curvedsubstrates of 25 nm radius and investigated by atom probe tomography. Due to the specificgeometry, the excess volume of the reaction product induces compressive and dilatational stress onopposite sides of the product layer, even in the case of semi-coherent or incoherent interphaseboundaries. The resulting stress gradient leads to additional driving force, which accelerates ordecelerates the reaction rate in dependence on the stacking sequence of the layer material. Byquantitative analysis, the induced level of stress can be quantified from the modified growth rate ofthe product
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Advances in science and technology Vol. 46 (Oct. 2006), p. 126-135 
    ISSN: 1662-0356
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Natural Sciences in General , Technology
    Notes: Down-scaling is a major principle of modern technology. As a consequence, thestability of many technical devices is controlled by solid state reactions that proceed on the range ofa few nanometres only. On such a short length scale even basic aspects of reaction physics asfundamental as e.g. the Ficks laws of diffusion, need to be reconsidered.Only very few dedicated techniques are suitable to study atomic transport and reactions withsufficient accuracy. Among them, the atom probe tomography is exceptional, as it allows thedetection and localization of individual atoms with an accuracy of a lattice constant. An almostcomplete reconstruction of the 3D atomic arrangement of different atomic species gets possible.This article provides an overview on recent atom probe studies of reactive diffusion. After anintroduction into the principles of the analysis method, physical mechanisms of solid state reactionsare discussed in view of recent experiments at metallic thin film interfaces. How does nucleation ofan interfacial product take place? In which way do grain boundaries influence the reaction? As atechnical example, the stability of Cu/NiFe GMR sensor layers is discussed
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 584-586 (June 2008), p. 380-386 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The radiotracer technique was applied for measuring grain boundary diffusion of Ni inultrafine grained (UFG) copper materials with different nominal purities and in a Cu—1wt.%Pballoy. The UFG specimens were prepared by equal channel angular pressing at room temperature.The stability of the microstructure was studied by focused ion beam imaging. Grain boundarydiffusion of the 63Ni radioisotope was investigated in the temperature interval from 293 to 490Kunder the formal Harrison type C kinetic conditions. Two distinct short-circuit diffusion paths wereobserved. The first (relatively slow) path in the UFG materials corresponds unambiguously torelaxed high-angle grain boundaries with diffusivities which are quite similar to those in therespective coarse-grained reference materials. The second path is characterized by significantlyhigher diffusivities. The experimental data are discussed to elucidate the contribution of nonequilibriumgrain boundaries in the deformed materials. Alternative contributions of other shortcircuitdiffusion paths cannot be ruled out, particularly for the Cu-Pd alloy
    Type of Medium: Electronic Resource
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