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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2935-2937 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of radiation damage exposure on InGaAs quantum wells and InAs quantum dots are compared using luminescence spectroscopy techniques. A large increase in the radiation resistance of the InAs quantum dots is observed and attributed to exciton localization in the quantum dots and a point defect strain gettering effect. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 733-735 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transverse spin lifetimes of spin-polarized photogenerated carriers in InAs self-assembled quantum dots are extracted from the depolarization of their photoluminescence in a magnetic field perpendicular to the spin (the Hanle effect). Hanle measurements on a series of samples reveal that the dot dimensions influence the spin lifetime and its dependence on temperature. The spin lifetime as a function of excitation intensity is qualitatively distinct for carrier spins created in the GaAs host as compared to in the InAs wetting layer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2194-2196 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an InAs self-assembled quantum dot structure designed to spatially separate and store photo-generated electron-hole pairs. The structure consists of pairs of strain-coupled quantum dots. Separation of electron-hole pairs into the quantum dots and strain-induced quantum dots has been observed using power-dependant photoluminescence and bias-dependent photoluminescence. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1235-1237 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon doping of epitaxial InSb films grown by gas-source molecular beam epitaxy was studied using carbon tetrabromide as the carbon dopant source. Carbon was found to be a p-type dopant in InSb, yielding the highest as-grown acceptor concentrations to date, up to mid 1020 cm−3 as deposited. Room temperature mobilities ranged from 35 to 90 cm2/V s depending upon doping level. The hole concentration was found to be relatively insensitive to growth temperature between 325 and 400 °C. Higher growth temperatures required higher Sb fluxes in order to maintain a constant hole concentration. Hole concentration increased linearly with increasing CBr4 up to 5×1020 cm−3. Further increase in the dopant flow reduced the hole concentration and mobility and produced polycrystalline material. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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