Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 51-52 (May 1996), p. 283-288 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1299-1306 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper an extensive characterization of the electrical activation of ultra-low energy implanted boron in silicon is reported. The Spreading Resistance Profiling technique has been used, in a suitable configuration, for measuring doped layers shallower than 100 nm, in order to extract the carrier concentration profiles. The dependence on the implant energy, dose, and annealing temperature allowed us to gain more insight into the mechanisms responsible for the electrical activation at implant energies below 1 keV. By measuring the electrical activation as a function of time for several annealing temperatures, the thermal activation energy for the electrical activation of the dopant was achieved. It slightly depends on the implant dose and it is in the range of 2–3 eV. In particular, for an implant dose of 1×1014/cm2 it is 2.0 eV, close therefore to the 1.7 eV activation energy found [Napolitani et al., Appl. Phys. Lett. 75, 1869 (1999)] for the enhanced diffusion of ultra-low energy implanted boron. The best conditions to maximize electrical activation, while minimizing diffusion, are identified and junction depths of ∼50 nm with sheet resistance below 500 Ω reported. These data are reported and their implication for the fabrication of future generation devices is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5381-5385 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated and modeled the B diffusion in Si following ultralow energy implantation. Secondary ion mass spectrometry measurements revealed that B diffusion is transient enhanced. For the simulation we have used a kick-out model which requires only two uncorrelated parameters able to describe the microscopical processes involved. By optimizing the parameters, an excellent agreement between the simulated and the experimental profile broadening is achieved. Moreover, an extension of the previous model that accounts for interstitial cluster formation and dissolution was implemented in order to achieve a better description of B diffusion. The extracted parameters are discussed and compared with published values. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3058-3060 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the location of the defects causing the transient-enhanced diffusion (TED) of boron implanted at very low energies in Si. The localization was done by removing the surface layer of the silicon implanted with boron (1 and 0.5 keV, 1×1014/cm−2) by repeated native-oxide growth and removal. Subsequent annealing revealed the diffusion behavior. The fast and ultrafast processes of TED that where discriminated in an earlier work by Napolitani et al. [Appl. Phys. Lett. 75, 1869 (1999)] are found to be generated by defects located at different depths. The defects responsible for the fast tail shift are found to be located closer to the surface than the defects leading to the ultrafast tail shift. The nature of the two defect classes is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3996-3998 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the clustering behavior of ultra-low-energy (500 eV) implanted boron in silicon during the postimplantation activation annealing. The broadening of the boron concentration profile is found to be composed of a diffusing and a nondiffusing contribution. The nondiffusing part is attributed to clustered boron. The concentration of boron in clusters is found to be dependent on the annealing temperature and the annealing time. The amount of boron in clusters decreases with increasing annealing time. A dissolution time constant with an average activation energy of 2.3 eV is determined from this behavior. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 327-329 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen precipitates at various grain boundaries in crystalline silicon, formed after prolonged high temperature annealing, grow within a narrow size distribution. This narrow size distribution appears to depend on the specific grain boundary. On the basis of this observation a model is derived which is based on the energy balance between grain boundary energy, Si/SiO2 interface energy, and an additional term describing the energy of the ledges of the faceted precipitates. This model predicts an energy minimum for a defined size of the precipitates. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 241-243 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried oxides in silicon-on-insulator (SOI) structures have been reported to grow in thickness by thermally oxidizing the superficial silicon layer. A thermodynamic model is presented which is based on the experimental observation that thermal oxidation leads to an increase of the oxygen interstitial concentration in silicon beyond its normal solubility. This increase is assumed to be proportional to the growth rate of the external thermal oxide. Discrepancies between the only two available sets of data are discussed in terms of different levels of oxidation-induced supersaturations of silicon self-interstitials. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Fresenius' Zeitschrift für analytische Chemie 100 (1935), S. 193-195 
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...