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  • 1
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 79 (1972), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The mean random blood concentration of non-glucose reducing substances is lower in 540 pregnant women than in 56 non-pregnant controls. The mean blood levels of non-glucose reducing substances were also measured during a 50 g. oral glucose tolerance test on 412 women in pregnancy and the puerperium and were little different from random levels; the levels at 2½ hours were lower than those fasting. A significant negative correlation of blood glucose levels and those of non-glucose reducing substances may be a technical artefact, although a functional relationship cannot be excluded. The levels of non-glucose reducing substances do not appear to increase during pregnancy, but the range of values is so wide, and at present, unpredictable that blood glucose should be measured by a method for “true” glucose in pregnant women as in others.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 78 (1971), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: From the results of 685 modified oral glucose tolerance tests performed during the first week post partum, it is shown that the mean blood glucose levels, both fasting and 2½ hours after glucose, fall below the corresponding antenatal values This decrease is transient and most marked from 36 to 59 hours after delivery. In consequence, the normal upper limit of fasting blood glucose (mean plus two standard deviations) on the third puerperal day is 5 mg. per 100 ml. less than in late pregnancy. The corresponding decrease in the normal upper limit of 2½ hours blood glucose is probably greater than 7 mg. per 100 ml. and this is more likely than the fasting blood glucose level, to reveal the latent diabetic in the puerperium. Interpretation of glucose tolerance tests performed early in the puerperium must take account of these changes which result, most probably, from variation in hormonal influences following childbirth.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 78 (1971), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: It is shown from a longitudinal study of 540 women that the mean random blood glucose concentration in late pregnancy is significantly lower than in early pregnancy. A modified glucose tolerance test on 412 of these women late in the third trimester of pregnancy showed no significant difference between the mean fasting blood glucose and the value 2½ hours after oral ingestion of 50 g. glucose. When this test was repeated in the early puerperium on 357 of these women the mean blood glucose at 2½ hours postglucose was very significantly lower than the mean fasting blood glucose. Both the mean fasting and the mean 2½-hour blood glucose were significantly lower in the early puerperium than in late pregnancy. One implication is that glucose tolerance tests of women in the early puerperium may be wrongly interpreted as normal.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7198-7208 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of film edge and corner stress fields on the behavior of dislocations in silicon is investigated. Stresses arising from a silicon–nitride film pad on a silicon substrate are calculated using the finite element method, and the resulting spatially varying stress–tensor components are utilized to drive numerical simulations of dislocation behavior. The dislocation dynamics code involves a full three-dimensional implementation of the Peach–Koehler force formalism. By studying the motion of dislocations on various slip systems in various locations relative to the nitride pad, we are able to determine the stationary dislocation configurations which can be achieved in this geometry. The zero resolved-stress contours near the silicon surface are shown to be a useful tool for understanding both the nature of the dislocation propagation as well as the final dislocation configurations. We examine the nucleation of dislocations qualitatively from the critical-radius point of view, and identify the "hot spots" for nucleation near the nitride film edge. Thicker nitride films are found to have a greater number of possible nucleation sites, and a greater variety of possible stable configurations, as experimentally observed. The simulations are extended to study the effect of changing the pad edge orientation relative to the silicon lattice. Finally, we demonstrate the usefulness and power of these techniques in handling more complex situations by illustrating the types of behavior resulting from cross-slip, reconnection between dislocations nucleated on intersecting glide planes, Frank–Read spiral sources, and traveling dislocations interacting with nitride edges. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 120-129 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical simulations are used to study various dislocation interactions expected to occur when a strained epitaxial layer relaxes. Frank–Read sources located on parallel glide planes are shown to produce elaborate network patterns of dislocations in the unstrained substrate of the layer. These are strikingly similar to experimentally observed patterns in high-quality relaxed SiGe layers grown by low-temperature ultrahigh vacuum chemical vapor deposition. Frank–Read sources on intersecting glide planes, on the other hand, produce characteristic corner-pileup structures which have previously been attributed to a "modified" Frank–Read source mechanism. The blocking of threading arms by misfit dislocations is found to occur only very near the critical strain. A much more important mechanism preventing ideal layer relaxation appears to be the formation of immobile pairs of threading dislocations on parallel glide planes. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1220-1222 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The motion of a dislocation in a strained layer is calculated using continuum elastic theory. Blocking of the moving dislocation by a fixed misfit dislocation across its path is found to be weaker than previously believed. The calculation makes no approximation regarding the shape of the dislocation, and correctly includes the self-interaction of the moving dislocation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 973-975 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a GaAs/AlxGa1−xAs quantum well intersubband photodetector for the long wavelength infrared region, which operates at zero bias voltage. Detection without bias is achieved by using an asymmetrical barrier structure as well as modulation doping, giving rise to a built-in field across the barrier layers. The maximum of the spectral response is centered at 10 μm with a spectral bandwidth of 1.6 μm and a 77 K peak detectivity of 2.5×109 cm(square root of)Hz/W at 0 V. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 246-248 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated a particular class of photovoltaic quantum well intersubband photodetectors. Each period of the active region in these structures consists of four zones, namely an excitation zone, a drift zone, a capture zone, and a tunneling zone. The devices show pronounced photovoltaic behavior and high detectivities. In particular, the responsivity without external bias is substantially enhanced if resonant carrier capture is achieved due to an appropriate design of the capture zone. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2060-2062 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present high resolution measurements of the far infrared reflectance and absorbance of InAs/AlSb type II heterostructures, grown on GaAs substrates by molecular beam epitaxy. Quantum wells grown with AlAs-like interfaces show broadening and blue shifting of the InAs transverse optical (TO) phonon compared to samples with InSb-like interfaces. This is explained by incorporation of arsenic in the AlSb barriers. The InSb-interface mode, recently reported from Raman investigations, could be observed in the multiple quantum well. Two lines are observed, which are attributed to the normal (AlSb on InAs) and the inverted (InAs on AlSb) interfaces. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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