Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 22 (1980), S. 57-60 
    ISSN: 1432-0630
    Keywords: 72.40+w ; 72.80 Ey ; 73.40 Lq
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin epitaxial HgCdTe/CdTe photodiodes are shown to have lower dark current noise than similar thick devices. This is explained by the limited-diffusion-volume model which requires a thin diode and a low surface recombination rate. Electron beam induced current is used for characterizing minority electrons distribution; the characteristic interface recombinations(L/D) has been found to be equal to 0.05 at 80 and 210 K.R 0 A measurements give values consistent with this model.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    ISSN: 1432-1106
    Keywords: Key words Acid phosphatase activity ; Mitochondrial dehydrogenase activity ; Ascorbate ; Catecholamine
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract  Both the acid-phosphatase and mitochondrial dehydrogenase assay have been used to quantify cell numbers. The commonly used acid-phosphatase assay uses p-nitrophenyl phosphate as a substrate, while the mitochondrial dehydrogenase assay is based on the conversion of tetrazolium to formazan. Our experimental results showed that the former assay was more sensitive in detecting small numbers of PC12 cells (200–10 000 cells/ well), whereas the latter was useful for larger numbers of cells (2000–40 000 cells/well). The number of PC12 cells decreased after dopamine treatment, according to the acid-phosphatase assay and by direct cell counts under a light microscope. However, the optical densities measured by the mitochondrial dehydrogenase assay increased after dopamine treatment. We tried to clarify discrepancies between the two assays, since dopamine is an important neurotransmitter and both assays are commonly used to estimate cell numbers. To elucidate the interference between dopamine and tetrazolium salt, cell-free control experiments were performed. Dopamine and other catecholamines (adrenaline and noradrenaline) reacted with tetrazolium and, thus, produced a false positive reaction in the assay. We therefore conclude that the tetrazolium assay is not a suitable method for evaluating the number of catecholamine-treated cells, while the acid-phosphatase assay is reliable and sensitive.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 689 (1993), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2143-2148 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we present, results on the growth of in situ doped p-on-n heterojunctions on HgCdTe epilayers grown on (211)B GaAs substrates by molecular-beam epitaxy (MBE). Long wavelength infrared (LWIR) photodiodes made with these grown junctions are of high performance. The n-type MBE HgCdTe/GaAs alloy epilayer in these structures was grown at Ts=185 °C and it was doped with indium (high 1014 cm−3 range) atoms. This epilayer was directly followed by the growth, at Ts=165 °C, of an arsenic-doped (1017–1018 cm−3 ) HgTe/CdTe superlattice structure which was necessary to incorporate the arsenic atoms as acceptors. After the structure was grown, a Hg annealing step was needed to interdiffuse the superlattice and obtain the arsenic-doped p-type HgCdTe layer above the indium-doped layer. LWIR mesa diodes made with this material have 77 K R0A values of 5×103, 81, 8.5, and 1.1 Ω cm2 for cutoff wavelengths of 8.0, 10.2, 10.8, and 13.5 μm, respectively; the 77 K quantum efficiency values for these diodes were greater than 55%. These recent results represent a significant step toward the demonstration of MBE as a viable growth technique for the in situ fabrication of large area LWIR focal plane arrays.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1747-1753 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long and middle wavelength infrared (LWIR, MWIR) p+-n photodiodes have been fabricated with Hg1−xCdxTe (0.20〈x〈0.30) grown by molecular-beam epitaxy (MBE). The epilayers were grown on (211)B lattice-matched ZnCdTe substrates. The surface morphology was smooth and free of in-plane twins. The Cd concentration (x) was uniform across the wafer, with standard deviations (Δx) as low as 0.0017. Structural properties were measured by double-crystal x-ray rocking curve and dislocation etching; FWHM values as low as 34 arcsec and etch pit density values as low as 1×105 cm−2 were measured. p+ -n homojunctions were formed by arsenic diffusion; unpassivated mesa photodiodes were fabricated by standard photolithographic techniques. MWIR and LWIR photodiodes fabricated with MBE material exhibited good diode performance, comparable to that obtained on photodiodes fabricated with the more matured technique of liquid-phase epitaxy. 77-K R0A products of the diodes measured were 6.35×107, 22.3, and 1.76 Ω cm2 with cutoff wavelengths of 4.66, 9.96, and 12.90 μm, respectively. The R0A product for a VLWIR photodiode was 1.36×102 Ω cm2 with a cutoff wavelength of 16.23 μm at 35 K. LWIR diodes with no antireflection coating had a quantum efficiency of 48.6%. The present results represent a significant step toward the demonstration of MBE as a viable growth technique for the fabrication of large infrared focal plane arrays.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6591-6593 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of ball milling on the magnetic properties of the Pr15Fe80B5 alloy, whose as-cast structure was composed of matrix phase Pr2Fe14B and Pr-rich and α-Fe phases, has been investigated by measuring iHc, thermomagnetic curves, and x-ray diffraction (XRD) patterns. By ball milling using a planetary ball mill up to 96 h, iHc decreased with the amorphization of the matrix and Pr-rich phases. However, subsequent heat treatments gave rise to the marked increase of iHc. The alloy, after 48 h of ball milling and subsequent 600 °C annealing possessed iHc of 17.4 kOe, Br of 5.8 kG, and (BH)max of 6.5 MGOe. This alloy showed sharp diffraction peaks of Pr2Fe14B phase, while the α-Fe phase peak, which persisted through the ball milling process, almost disappeared. The high iHc of the Pr-Fe-B alloy, subjected to optimum milling and subsequent annealing, was attributed to a very fine Pr2Fe14B phase precipitation from the amorphous state and to the effective solution of the α-Fe phase into the matrix phase. Also, a small addition of Cu to the Pr15Fe80B5 alloy was found to increase the coercivity. Further, the alloy milled for 12 h and annealed at 600 °C for 1 h showed iHc of 19.7 kOe, Br of 7.0 kG, and (BH)max of 10.2 MGOe.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5199-5203 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium tin oxide (ITO) thin films were deposited on polymeric substrates at room temperature by dc reactive magnetron sputtering from an In–Sn (90–10 wt%) alloy target. The electrical, optical, and mechanical properties of ITO films on various substrates such as polycarbonate, acrylic, polyethylene terephthalate, and glass are influenced sensitively by sputtering parameters. Therefore, the dependence of these properties on dc power, working pressure, and partial oxygen content has been systematically investigated. Low dc power was applied to avoid the deformation of polymeric substrates. The electrical resistivity of as-deposited ITO films decreases initially and then increases as oxygen partial pressure (PO2) increases. The optical transmittance at visible wavelength of 550 nm was as much as 85%. The friction force of as-deposited ITO films on various substrates is increased with an increase of dc power, and behaves similarly to the optimum curve of resistivity with increasing PO2. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1470-1473 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental measurements of the cation vacancy formation energies (Ef) of Hg1−xCdxTe were carried out by Hg-annealing and rapid quenching to room temperature, followed by Hall measurements at 77 K. Our observations show that one charge state vacancy is dominant, so that the fractional number n of cation vacancies at temperature T is related exponentially to the energy Ef required to create one vacancy, n=A exp(−Ef/kT). No appreciable temperature dependence of Ef due to temperature variation of the ionization levels and the self-consistent Fermi level is seen. Our measured value for the activation energy is found to be Ef=0.9±0.1 eV, for Hg1−xCdxTe with x=0.21, 0.3, and 0.43. This value is found to be nearly independent of Cd composition x. Theoretical calculations of the p-type carrier concentrations due to cation vacancies in Hg0.8Cd0.2Te yield results which are in good agreement with experimental data. These modeling calculations predict the cation vacancies to be predominantly doubly ionized species at 77 K.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4721-4726 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isothermal vapor-phase-epitaxial (ISOVPE) growth of device-quality HgCdTe layers on both CdTe and CdTe/Al2O3 substrates has been demonstrated. The material and device properties on both types of substrates have been studied and compared with reported values for HgCdTe grown by other techniques. The as-grown ISOVPE Hg1−xCdxTe (x(approximately-equal-to)0.3) epilayers are always p type with carrier concentrations of ∼5×1015 to 3×1016 cm−3 and mobilities of ∼230–260 cm2/V s at 77 K. The temperature and compositional dependence of electrical properties of ISOVPE Hg1−xCdxTe are somewhat different from those of liquid-phase epitaxy (LPE) and bulk HgCdTe. In particular, the acceptor ionization energy, EA =7 meV, is about half that obtained in midwavelength infrared LPE or bulk HgCdTe, and nearly independent of composition x. The R0A product of a representative photodiode (λc (approximately-equal-to)4.65 μm, 77 K) is 2×106 and 4 Ω cm2 at 77 and 195 K, respectively, with comparable device qualities seen on both CdTe and CdTe/Al2O3 substrates.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1025-1027 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared photodiodes fabricated with HgCdTe epilayers grown on GaAs substrates by molecular beam epitaxy (MBE) are reported here for the first time. Growth was carried out on the (211)B orientation of GaAs, and the as-grown epilayer (x=0.24) was p type. The n-p junction was formed by Be ion implantation, the resistance-area product (R0 A) at zero bias was 1.4×103 Ω cm2 , the wavelength cutoff was 8.0 μm, and the quantum efficiency was 22%; all were measured at 77 K. We show that in the diffusion regime diodes fabricated with MBE HgCdTe/GaAs have comparable R0 A product values to those made with HgCdTe grown by bulk techniques. This result discloses new possibilities for advanced monolithic HgCdTe devices based on GaAs integrated circuit technology.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...