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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1206-1210 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A common problem with fabricating n-type layers in semi-insulating GaAs by ion implantation is the variation in the net activation efficiency on the substrate side of the implanted dopant profile. We compare two methods for modifying these doping profile tails in order to achieve uniform activation properties of implanted layers over large wafer areas. The two methods are compensation of an n-type doping profile by a buried damage layer (oxygen or helium implants) or by coimplantation of an acceptor species (beryllium). Experimental results are shown both for n-only and n+-n profile modifications. The use of Be to form a buried p-type layer has several advantages over the damage-induced compensation.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 629-636 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of ion implantation induced damage in InAs, GaSb, and GaP, and its removal by rapid thermal annealing have been investigated by Rutherford backscattering and transmission electron microscopy. There is relatively poor regrowth of these materials if they were amorphized during the implantation, leaving significant densities of dislocation loops, microtwins, and in the case of GaSb, polycrystalline material. For implant doses below the amorphization threshold, rapid annealing produces good recovery of the lattice disorder, with backscattering yields similar to unimplanted material. The redistribution of the implanted acceptor Mg is quite marked in all three semiconductors, whereas the donor Si shows no measurable motion after annealing of InAs or GaP. In GaSb, however, where it appears to predominantly occupy the group III site, it shows redistribution similar to that of Mg.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1915-1917 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successive ion beam milling at grazing angles of a 2400-A(ring)-thick, c-axis-oriented YBa2Cu3O7 film is shown to give smooth films which superconduct at thicknesses on the order of tens of angstroms. The thinning and polishing process is characterized at successive milling stages using resistance transitions, x-ray analysis, scanning electron microscopy, and Rutherford backscattering and channeling analysis of composition and surface quality. As thinning proceeds, scanning electron microscopy and diffraction features associated with a-axis texture are removed and crystalline quality, as measured by x rays and channeling, markedly improves.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1260-1262 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using high dose implantation of Cr+ into (111)-oriented Si, followed by annealing, we have created continuous, buried layers of CrSi2 in Si. The layers are stoichiometric and epitaxially aligned along one of the substrate 〈111〉 directions. Results of temperature-dependent resistivity and Hall measurements on the early layers show that they are p-type degenerate semiconductors consistent with data for bulk samples. More recent layers appear to be single crystal with [0001] parallel to [111] and are n type with lower carrier density.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1629-1634 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the mechanisms for formation of continuous CoSi2 layers by high dose (∼1017 cm−2) Co implantation into Si(100). For single dose implantations, a critical dose exists above which coalescence into a single layer occurs after a vacuum anneal at 1000 °C for 30 min, but below which disconnected, strongly {111} faceted precipitates form. Transmission electron microscopy and Rutherford backscattering suggest that the key condition for continuous layer coalescence to occur is the formation of a connected array of small silicide precipitates either as-implanted or during an intermediate 600 °C anneal. This postulate is supported by the observation that super-critical doses which are builtup by successive subcritical doses and 1000 °C anneals do not coalesce into single layers.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1281-1292 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reactive ion etching of GaAs with a CCl2F2:O2 discharge was investigated as a function of gas flow rate (10–60 sccm), total pressure (2–50 mTorr), power density (0.25–1.31 W cm−2), gas composition (0%–70% O2), and etch time (1–64 min). The etch rate decreases with increasing gas flow rate, increases with increasing power density, and goes through a maximum at a gas composition of 75:25 CCl2F2:O2 under our conditions. After etching at low-power densities (0.56 W cm−2) and for high CCl2F2 ratios (19:1 to O2), carbon and chlorine could be detected in the GaAs to a depth of less than 15 A(ring) by x-ray photoelectron spectroscopy. Under these conditions there was a Ga deficiency to a depth of ∼100 A(ring), which we ascribe to surface roughening and the preferential vaporization of As2O3 over Ga2O3. At high-power densities (1.31 W cm−2) a polymeric layer several hundred angstroms thick containing CCl and CF bonds was observed on the GaAs surface. Etching under O2-rich conditions did not lead to any additional creation of surface oxides. Both ion channeling and electron microscopy detected a thin disordered layer on the GaAs after etching. Small (〈100 A(ring) diam) dislocation loops were present at a depth varying from ∼400 A(ring) for 0.56 W cm−2 (380-V self-bias) plasma power density to ∼2200 A(ring) for 1.31 W cm−2 (680-V self-bias). The disorder was stable against a 500 °C annealing treatment.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thickness dependence of material quality of InP-GaAs-Si structures grown by atmospheric pressure metalorganic chemical vapor deposition was investigated. The InP thickness was varied from 1–4 μm, and that of the GaAs from 0.1–4 μm. For a given thickness of InP, its ion channeling yield and x-ray peak width were essentially independent of the GaAs layer thickness. The InP x-ray peak widths were typically 400–440 arcsec for 4-μm-thick layers grown on GaAs. The GaAs x-ray widths in turn varied from 320–1000 arcsec for layer thicknesses from 0.1–4 μm. Cross-sectional transmission electron microscopy showed high defect densities at both the InP-GaAs and GaAs-Si interfaces. In 4-μm-thick InP layers the average threading dislocation density was in the range (3–8)×108 cm−2 with a stacking fault density within the range (0.4–2)×108 cm2. The He+ ion channeling yield near the InP surface was similar to that of bulk InP (χmin∼4%), but rose rapidly toward the InP-GaAs heterointerface where it was typically around 50% for 1-μm-thick InP layers. All samples showed room-temperature luminescence, while at 4.4 K, exciton-related transitions, whose intensity was a function of the InP thickness, were observed.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5641-5647 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reduction of the defect density in the Si overlayer of Si/CoSi2/Si heterostructures fabricated by mesotaxy has been achieved by selective amorphization and regrowth of the Si. Layer-by-layer regrowth of the silicide with an activation energy of 1.14 eV has also been clearly shown.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1942-1946 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Damage introduction by implantation of Be and Si into InSb, and its removal by rapid thermal annealing in the range 300–400 °C for 20 s was investigated by Rutherford backscattering and transmission electron microscopy. There is good recovery of the lattice upon annealing at 450 °C provided the InSb was not amorphized during the implantation step. At the same time, there is limited redistribution of Be for these annealing conditions, but for Si there is marked diffusion even during a nominal room-temperature implant. Lowering the sample temperature to 77 K during the implant stops this redistribution, with a near-Gaussian ion distribution resulting. The activation of Be is of the order of 50% over the dose range 1013–1015 cm−2. In most cases there is a marked similarity in implant properties of InSb to those of GaSb.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between electrical activity, dopant solubility, and diffusivity was investigated as a function of the substrate temperature during implantation of Te, Cd, and Sn ions into GaAs. Implant doses of these species in the range 5×1012–5×1015 cm−2 were performed in the temperature range −196 to 400 °C, followed by either transient (950 °C, 5 s) or furnace (450–900 °C, 20 min) annealing. The redistribution after such annealing was found to depend on the implant temperature, and was always greatest for Cd followed by Sn and Te. The degree of electrical activation was in the same order, but there was essentially no correlation of electrical activity with dopant solubility. Te, for example, showed soluble fractions of ∼90% for a dose of 1015 cm−2 after annealing at 850 °C or higher, regardless of the initial implant temperature. By sharp contrast, the electrically active fraction under these conditions was in the range 0.8%–3.4%. There was also no apparent correlation of the degree of electrical activity with the presence of defects visible in transmission electron microscopy. The energy required to activate the implanted ions fell broadly into two categories: "low'' values in the range ∼0.4–0.8 eV (which included Cd implanted or annealed under any condition, and elevated temperature implants of Sn and Te), and "high'' values in the range 1.7–1.9 eV [which included implants of Sn and Te performed at −196 °C, or high dose (1015 cm−2) room-temperature implants of these species].
    Type of Medium: Electronic Resource
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