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  • 1
    Electronic Resource
    Electronic Resource
    Photoconductivity and n- to p-type transition in silicon planar-doped GaAs structures with a doped cap layer (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2659-2665 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoconductivity, photo-Hall free carrier concentrations and mobilities were measured on molecular beam epitaxy-grown silicon planar-doped GaAs samples, with silicon concentrations between 1.4×1012 and 8.8×1013 cm−2, as functions of temperature. In all samples, the planar-doped region is placed 0.2 μm below a n+-doped cap layer at the surface. We perform a systematic investigation of the persistent as well as nonpersistent photoconductivity effects which are present in all samples. A phenomenological analysis shows the presence of two distinct conduction channels, one with n characteristics and the other with p characteristics. These channels can present either bulk or two-dimensional characteristics, depending on the light intensity and on the temperature. A model based on spatial separation between electrons and holes is proposed to account for the persistence of the photoconductivity effect. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360127
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  • 2
    Electronic Resource
    Electronic Resource
    Competition between negative and positive photoconductivity in silicon planar-doped GaAs (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2258-2260 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photo-Hall free electron concentrations were measured on molecular beam epitaxy grown silicon planar-doped GaAs samples, with silicon nominal concentration ranging from 1.4×1012 to 8.8×1013 cm−2, as function of temperature. We found conclusive results showing competition between positive photoconductivity and negative persistent photoconductivity effects. At temperatures below a critical Tc, the negative photoconductivity effect is dominant, while above Tc the positive effect dominates. We also found some evidence that the positive effect is related to spatial charge separation and that the negative effect is related to the DX center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111637
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  • 3
    Electronic Resource
    Electronic Resource
    Precision interplanar spacing measurements of boron-doped silicon (1983)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 16 (1983), S. 486-492 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A study of the lattice parameters of boron-doped silicon (1014−1019 cm−3) grown in (111) and (001) directions by the Czochralski technique has been undertaken. Interplanar spacings (d) were measured by the pseudo-Kossel technique to a precision of 0.001%; different procedures to obtain d and the errors are discussed. The crystallographic planes are found to contract preferentially and the usual study of parameter variation must be made as a function of d. The diffused B particularly contracts the {333} plane, which is more pronounced in high concentrations. An orientation dependence of the diffusion during growth was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889883010870
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    Paper (German National Licenses)
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