ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
3C-SiC epitaxial layers were grown by method of sublimation epitaxy in vacuum on 6HSiCsubstrates. It was done investigation of magneto resistance and Hall effect of 3C-SiC/6H-SiCheterostructures in temperature range 1,4 – 300 К. At helium temperatures it was founded lowsamples resistance and negative magneto-resistance in week magnetic field ( ~ 1 T). Analysis ofobtained results shows, that low samples resistance can be connected with metal-isolation junctionin 3C-SiC epitaxial films
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.541.pdf
Permalink