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  • 1
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 168 (1951), S. 513-514 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] It can easily be shown that even with the fine focus now available (4 y. x 40 (x) it is advisable, in this wave-length range, to rely entirely on optical magnification of shadow-graphs and to place the specimen close to a photographic plate of high resolution. For, in the case of direct shadow ...
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 0378-4363
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4515-4517 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used scanning tunneling microscopy under ultrahigh vacuum conditions in order to study the local electronic properties, as well as the topographical and chemical structure of hydrogenated amorphous silicon. Local characteristics were measured and images of the topography, as well as simultaneously recorded images of the local tunneling barrier height, were obtained with subnanometer resolution. The experimental results demonstrate that chemical inhomogeneities on a subnanometer scale, which may be caused by the presence of hydrogen in these samples, can be detected in the local tunneling barrier height images.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 21 (1980), S. 307-311 
    ISSN: 1432-0630
    Keywords: 61.40 ; 84.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Amorphous siliconp−n junctions with various doping profiles have been prepared by the glow discharge technique and the effect of the barrier profile on electrical properties investigated. Current densities of up to 40 A cm−2 with rectification ratios of 104–105 were obtained withn +−ν−p + structures. The diode quality factor has also been investigated, both in the dark and under illumination.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1432-0630
    Keywords: 61.40 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract It is shown that thin-film field effect transistors (FETs) made from amorphous (a-) silicon deposited by the glow-discharge technique have considerable potential as switching elements in addressable liquid crystal display panels. The fabrication of the elements and their characteristics with steady and pulsed applied potentials are discussed in some detail. Two important points are stressed: (i) a-Si device arrays can be produced by well-established photolithographic techniques, and (ii) satisfactory operation at applied voltages below 15VV is possible. Small experimental 7×5 transistor panels have been investigated and it is shown that with the present design up to 250-way multiplexing could be achieved. The reproducibility of FET characteristics is good and in tests so far no change has been observed after more than 109 switching operations.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1432-0630
    Keywords: 61.40 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A series of experiments aimed at improving the performance of amorphous silicon field effect transistors has been carried out. The dc and dynamic characteristics of the optimised devices are described. Stable devices capable of ON-currents of the order of 100 μA with OFF-currents ≃10−11 A can be fabricated which could, in principle, be used to address more than 1000 lines of a liquid crystal display. The properties of the highly conducting ON-state channel have also been studied. The field effect mobility, 0.3 cm2 V−1 s−1 at room temperature, has an activation energy of 0.1 eV at the higher gate voltages. The possible reasons for the improvement in performance over earlier devices are discussed.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1432-0630
    Keywords: 61.40 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The work described in this paper is concerned with the possible applications in integrated circuits of thin-film field effect transistors (FETs) made from glow discharge amorphous (a-) silicon and silicon nitride. The construction and performance of inverter circuits, employing integrated a-Si load resistors, are described in some detail. The extension of this basic circuit to NAND and NOR gates, to a bistable multivibrator and to a shift register is reported. Based on the excellent photoconductive properties of a-Si an integrated addressable photosensing element has been constructed, which could have potential applications in imaging arrays.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 34 (1984), S. 175-178 
    ISSN: 1432-0630
    Keywords: 61.40 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The paper describes the design and development of an amorphous silicon (a-Si) image sensing element that combines the excellent photo-conductive properties ofa-Si with the proven switching performance ofa-Si field effect transistor (FET) devices. In the present design the switching element is fabricated on top of the photoconductor, making possible an imaging element that is compact, and capable of being produced in linear or two-dimensional arrays. The output current of an integrated elementary device varies from about 10 ΜA at a white light intensity of 1017 photons s−1 cm−2 to about 10 nA at 1013 photons s−1 cm−2. This large dynamic range, providing an excellent grey scale, can be achieved with read-times of about 20 Μs.
    Type of Medium: Electronic Resource
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