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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of two different types of long-period ordered alloys by high-resolution electron microscopy (1980)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 36 (1980), S. 190-193 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: High-resolution electron microscopy can be used to differentiate between two structural models of long-period ordered alloys. These models differ in the nature of the disorder as seen in the stacking irregularities which can have planar boundaries as exemplified by Ag3Mg or wavy boundaries as in AuCu II. In the composition range 22-27 at.% Mg, Ag3Mg is built up with a regular arrangement of two kinds of structural layers, 1 or 2 L12 cells in thickness. Some stacking disorder exists, but this alloy can be locally described using a space-group notation and has the character of being an infinitely adaptative structure. High-resolution images have been used to show the perfect planarity of the boundaries in Ag3Mg, thus demonstrating the way in which disorder is accommodated in this alloy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S056773948000040X
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  • 2
    Electronic Resource
    Electronic Resource
    III-V ternary semiconductor heterostructures: The choice of an appropriate compositional analysis technique (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2149-2155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The composition of ternary III-V semiconductor heterostructures can now be measured in a number of ways. Conventional spectroscopic probe techniques are inappropriate for fine (nanometer scale) heterostructures: Here, those transmission electron microscopy techniques which are appropriate, are compared emphasizing that different alloy systems often require different approaches. The three representative methods discussed in detail are kinematic convergent beam diffraction, 200 dark field intensity measurement, and [001] bright field thickness fringe matching. Dark field intensity measurement is found to be the most sensitive analytical method for many alloys, but the accuracy that may be achieved by thickness fringe matching is generally little worse, and sometimes better. Those convergent beam diffraction techniques which rely on lattice parameter measurement would not appear to be particularly useful except for the purposes of distinguishing nonunique interpretations of other measurements. It is also noted that no technique currently available is capable of measuring the composition of AlxGa1−xSb alloys to an accuracy of better than ±0.05 in x, so that further technique development will be required if heterostructures in this alloy system are to be studied seriously.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348742
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  • 3
    Electronic Resource
    Electronic Resource
    Correlated transmission electron microscopy and photoluminescence studies of the Se+-ion implantation of a GaAs/(Al,Ga)As multiple quantum well (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1279-1287 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the Se+-ion implantation and subsequent annealing of a GaAs/(Al,Ga)As multiple quantum well, characterizing the process using transmission electron microscopy, photoluminescence spectroscopy, and Monte Carlo simulation techniques. We conclude that enhanced layer interdiffusion occurs at depths several times the projected range for the Se+ implant, and that there is evidence of residual stress at similar depths.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345677
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  • 4
    Electronic Resource
    Electronic Resource
    High-quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low-pressure metalorganic chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4511-4514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful growth of Ga0.49 In0.51 P-GaAs superlattices on GaAs and Si substrates by low-pressure metalorganic chemical vapor deposition. The high quality of the structure grown on GaAs and silicon substrates has been evidenced by transmission electron microscopy photographs, that show very sharp interfaces between GaAs wells and Ga0.49 In0.51 P barriers, with perfect control of thicknesses and compositions. Classical Hall measurements performed on the sample further demonstrated the presence of a two-dimensional electron gas with a mobility at T=4 K , μ(4 K)=50 000 cm2 /V/s, and a carrier concentration n−(4 K)=2.9×1011 cm−2. GaAs/Ga0.49In0.51P superlattices have been used, as well as buffer layer in order to grow GaAs on silicon substrates. Mirrorlike single-crystal GaAs has thus been obtained. A GaInP/GaAs heterostructure with electron Hall mobility as high as 6000 cm2 /V/s at 300 K and 80 000 cm2/V/s at 4 K has been grown, which is the highest mobility that has yet been reported for these materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340147
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  • 5
    Electronic Resource
    Electronic Resource
    The atomic scale structure and the electronic properties of a graded composition semiconductor layer (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1603-1607 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a study on the relationship between the structural and electronic properties of a graded layer of undoped AlxGa1−xAs, where x was specified to increase linearly from 0 to 0.2 over 50 nm. The layer was grown by molecular-beam epitaxy between layers of doped GaAs. A high-resolution dark-field transmission electron microscopy imaging technique of combining information from 002 and 002¯ reflections of AlxGa1−xAs allowed us to image the graded region with near atomic resolution. Differences between the predicted and measured diode performance of the graded layer are discussed in the light of our results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339946
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  • 6
    Electronic Resource
    Electronic Resource
    Lower Tc barriers at high angle boundaries in the (BiPb)2Sr2Ca2Cu3Ox system (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2554-2556 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of high angle boundaries in the (BiPb)2Sr2Ca2Cu3Ox system, which is compositional and structurally modulated along the boundaries, was investigated by high resolution electron microscopy. These compositional variable boundaries tend to facet onto the (001) plane, leaving steps of height equal c/2 for the (BiPb)2Sr2CuOx and (BiPb)2Sr2Ca1Cu2Ox phases with amorphous material at the corners of these steps. These data suggest a weak link is formed at high angle boundaries where there are such lower Tc or insulating phases. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114430
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  • 7
    Electronic Resource
    Electronic Resource
    Electron-state lifetimes in submicron diameter resonant tunneling diodes (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1966-1968 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the lifetimes of electron states in the quantum wells of GaAs-AlGaAs resonant tunneling diodes with diameters down to 200 nm, as a function of the barrier thickness. The times were extracted from the magnitude of steps observed in the current-voltage characteristics, a quantum effect which reflects the quasi-one-dimensional electron transport in these devices. We find very good agreement between the experimental lifetimes, and those calculated using data from transmission electron microscopy. It is also shown that the total scattering time does not correlate with the barrier thickness and is much smaller than the electron-state lifetime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106151
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  • 8
    Electronic Resource
    Electronic Resource
    Determination of the in situ misfits of coherent particles (1975)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 8 (1975), S. 226-228 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A simple method is described for the determination of the in situ misfit of a coherent particle. The principle of the technique is to obtain moiré fringes from the different lattice spacings of the distant unstrained matrix and the uniformly dilated particle. The accuracy of the method is investigated and results are given for cobalt particles in copper and iron particles in copper.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889875010345
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  • 9
    Electronic Resource
    Electronic Resource
    Novel instabilities in the oxidation of a Nimonic alloy when YBaCuO is deposited upon it (1990)
    Springer
    Oxidation of metals 34 (1990), S. 335-349 
    Details
    ISSN: 1573-4889
    Keywords: Nimonic 80A alloy ; YBaCuO ; scale behavior ; superconductor
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract When an YBaCuO film is deposited onto a Nimonic 80A alloy substrate using a plasma technique there is extensive inter-reaction. The microstructural and compositional relationships between the layered products in this interfacial scaling process are described using data obtained by conventional edge-on TEM techniques. Our results demonstrate the way in which the segregation of chromium to the YBaCuO overlayer dominates the scaling behaviour that is seen, despite the formation of intermediate layers which would normally have been expected to act as diffusion barriers, and highlight the potential difficulties in making well behaved electrical contacts for this superconductor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00665022
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  • 10
    Electronic Resource
    Electronic Resource
    The initiation of breakaway oxidation of Fe-9Cr-1Mo in a high pressure CO2 atmosphere (1986)
    Springer
    Oxidation of metals 26 (1986), S. 431-466 
    Details
    ISSN: 1573-4889
    Keywords: breakaway oxidation ; transmission electron microscopy ; cross-section ; carbondioxide
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The scale existent at the initiation of breakaway oxidation kinetics for an Fe-9Cr-1Mo alloy, as oxidized in 1% CO-CO2 at 600°C, is chemically and microstructurally characterized by the transmission electron microscopy of cross-sectional specimens. The relative importance of chemical and mechanical instabilities in the history of the scale development is thus deduced and the importance of changes in the CO/CO2 ratio at the inward growing interfaces of the scale emphasised.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00659346
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