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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 139 (Apr. 2008), p. 1-10 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: In the present study molecular dynamics simulations were carried out to investigate thedeformation of pure FCC aluminum and diamond cubic silicon interfaces under shear stress. Asecond nearest-neighbor modified embedded atom method was used to describe the interactionsbetween Al-Al, Si-Si and Al-Si atoms. The critical shear stress (CSS) was determined for variousAl/Si and Al/Al interfaces with different alignments and orientations. Structural analyses show thatthe deformation is localized at approximately 10 Å thickness of the interface in Al. The criticalshear stress of Al/Si interface was found to be significantly lower than the critical tensile stress dueto the partial stick-slip in sliding. In addition, it has been proven that there is no explicit relationshipbetween shear and tensile critical stresses, which is fundamentally different from isotropicmaterials, where the shear stress is about half of the tensile stress. The misorientation has a dramaticeffect in reducing shear stress at Al/Al interfaces, but has no effect on CSS in Al/Si. As a result, itwas shown that introducing Si improves the strength of the interface (and the composite material ingeneral) for different grain orientations
    Type of Medium: Electronic Resource
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