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  • 1
    Electronic Resource
    Electronic Resource
    A 36 cm2 large monolythic pn-charge coupled device x-ray detector for the European XMM satellite mission (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 4271-4274 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Monolythic arrays of 12 pn-charge coupled devices 3×1 cm2 each, have been developed and produced for the focal plane instrumentation of the high throughput European Photon Imaging Camera on XMM and the German ABRIXAS x-ray satellite mission. The design parameters have been optimized to match the properties of the x-ray imaging optics as well as the x-ray intensity, energy bandwidth, and characteristic time constants of objects to be observed. The pixel size is 150×150 μm2; read-out is performed in parallel with 64 channels in each subunit, resulting in a total of 768 channels; low noise, spectroscopic performance is realized by on-chip integrated JFET electronics; high ohmic, ultrapure bulk material allows full depletion and enhances the efficiency for higher energy x-ray detection. The fabrication process, the layout topology, and the operating conditions guarantee ten years operation in space without performance degradation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148341
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    High-Resolution High-Count-Rate X-ray Spectroscopy with State-of-the-Art Silicon Detectors (1998)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 5 (1998), S. 268-274 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: For the European X-ray multi-mirror (XMM) satellite mission and the German X-ray satellite ABRIXAS, fully depleted pn-CCDs have been fabricated, enabling high-speed low-noise position-resolving X-ray spectroscopy. The detector was designed and fabricated with a homogeneously sensitive area of 36 cm2. At 150 K it has a noise of 4 e− r.m.s., with a readout time of the total focal plane array of 4 ms. The maximum count rate for single-photon counting was 105 counts s−1 under flat-field conditions. In the integration mode more than 109 counts s−1 can be detected at 6 keV. Its position resolution is of the order of 100 µm. The quantum efficiency is higher than 90% from carbon K X-rays (277 eV) up to 10 keV. New cylindrical silicon drift detectors have been designed, fabricated and tested. They comprise an integrated on-chip amplifier system with continuous reset, on-chip voltage divider, electron accumulation layer stabilizer, large area, homogeneous radiation entrance window and a drain for surface-generated leakage current. At count rates as high as 2 × 106 counts cm−2 s−1, they still show excellent spectroscopic behaviour at room-temperature operation in single-photon detection mode. The energy resolution at room temperature is 220 eV at 6 keV X-ray energy and 140 eV at 253 K, being achieved with Peltier coolers. These systems were operated at synchrotron light sources (ESRF, HASYLAB and NLS) as X-ray fluorescence spectrometers in scanning electron microscopes and as ultra low noise photodiodes. The operation of a multi-channel silicon drift detector system is already foreseen at synchrotron light sources for X-ray holography experiments. All systems are fabricated in planar technology having the detector and amplifiers monolithically integrated on high-resistivity silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049597014052
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Silicon drift detector – the key to new experiments (1998)
    Springer
    Naturwissenschaften 85 (1998), S. 539-543 
    Details
    ISSN: 1432-1904
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Natural Sciences in General
    Notes: Originally designed as position-sensitive detectors for particle tracking, silicon drift detectors are nowadays used for high-count-rate X-ray spectroscopy, operating close to room temperature. Due to their low-capacitance read-node concept, they are among the fastest high-resolution detector systems. They have opened a new spectrum of experiments in the wide field of X-ray spectroscopy: fluorescent analysis, diffractometry, material analysis, synchrotron experiments and X-ray holography. In addition, the detection of visible light, near-infrared light and UV light is measured with high efficiency. The low-noise readout of the light of scintillation crystals extends the spectrum of possiblities to the hard X- and gamma-ray spectrum. The fact that the detector system can be used at room temperature with good spectroscopic performance, and at –10°C with excellent energy resolution, avoiding liquid nitrogen for cooling and high-quality vacuum, guarantees a large variety of new applications, independent of the laboratory environment. A brief description of the device principles is followed by basics on low-noise amplification. The performance figures of a complete detector system are presented along with some already realized dedicated applications, with emphasis on a recently operated “mini-spectrometer” for the analysis of works of art.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s001140050545
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    A Fully Depleted pn-Junction CCD for Infrared-, UV- and X- ray detection (1998)
    Springer
    Experimental astronomy 8 (1998), S. 89-96 
    Details
    ISSN: 1572-9508
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract This paper describes the performance of the Fully Depleted pn-junction CCD (pn-CCD) system, developed for ESA's XMM-satellite mission for soft x-ray imaging and spectroscopy in the single photon counting mode in the 100 eV to 10 keV photon range. The 58 mm x 60 mm large pn-CCD array, designed and fabricated at the Semiconductor Lab (Halbleiterlabor) of the Max-Planck-Institut, uses pn-junctions for registers and as backside structure. This concept naturally enables full depletion of the detector volume independent of the silicon wafer's resistivity and thickness, and as such make it an efficient detector for the x-ray region and the infrared. For high detection efficiency in the soft x-ray region and UV, an ultrathin pn-CCD backside deadlayer has been realized. Each pn-CCD-channel is equipped with its own on-chip JFET amplifier which, in combination with the CAMEX-amplifier and multiplexing chip, facilitates parallel readout and fast data rate: the cooled pn-CCD system can be read out at a data rate up to 3 MHz with an electronic noise floor of ENC 〈 5 e-.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008008808704
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    Paper (German National Licenses)
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