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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 143-150 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A common result obtained in electromigration experiments carried out on Al-Si lines using different high resolution resistometric methods, is a monotonous non-linear resistance increase at the very beginning of the high current electromigration test, and a decrease after the high stressing current is switched off. These effects have often been attributed to the attainment of a steady state of vacancy concentration during and after electromigration. This paper shows how even small abrupt temperature steps, always present at the beginning and after electromigration tests, are the triggering events for different, often reversible, physical phenomena contributing to non-linear resistance changes. Precipitation–dissolution of alloyed elements appears to be the most significant one. Abrupt temperature changes also induce a change of the hydrostatic stress of passivated lines. The relaxation of the hydrostatic stress could be coupled with a void volume change, and the total resistance is a function of both the hydrostatic stress (through resistivity) and of void volume. However, we demonstrate that in our experiments the effect of hydrostatic stress relaxation on resistance variations is negligible with respect to the action of precipitation–dissolution. These non-linear, thermally induced effects, however, do not exclude possible simultaneous resistance changes due to the accumulation/relaxation of the electromigration damage. Experimental results are collected by means of different, complementary techniques. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2160-2161 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During the first thermal treatment after deposition and/or passivation of Al-based interconnects, a marked decrease in the electrical resistance can be observed. This resistance decrease cannot be described in terms of a single rate constant. Precipitation of the alloyed elements is probably the responsible atomic process. In a previous article, a spectrum of activation energies was extracted in order to characterize this decay. Recent research has shown that the presence of an activation energy spectrum is, mathematically, completely equivalent with a spectrum of pre-exponential factors. Since for precipitation–dissolution, the pre-exponential factor is a function of the distribution and geometry of the precipitates, the use of a spectrum of pre-exponential factors is for this specific case probably physically more relevant. The technique introduced for the determination of the spectrum of activation energies is still valid in case of the presence of a spectrum of pre-exponential factors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2270-2277 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There are several reasons to believe that the microstructural changes in Al-Si interconnects has to be described in terms of a spectrum of activation energies rather than in terms of a single activation energy. In this article, a method is presented to extract a spectrum of activation energies from an isothermal and a constant heating rate experiment. The formalism was applied to the relaxation behavior of passivated Al-1%Si interconnects. The method of analysis shows that the microstructural relaxation mechanisms in these interconnects are characterized by a narrow spectrum, centered at an energy of about 1.2 eV.
    Type of Medium: Electronic Resource
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