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  • 1
    Electronic Resource
    Electronic Resource
    Photocurrent spectroscopy of InxGa1−xAs/GaAs multiple quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2230-2232 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photocurrent spectra of InxGa1−xAs/GaAs multiple quantum well structures grown by molecular beam epitaxy are studied in the presence of electric fields perpendicular to the heterointerface. Several Δn=0 allowed and Δn≠0 forbidden excitonic transitions are observed. Both negative and positive shifts of exciton transitions are found. Good agreement is found between the photocurrent observations and calculations using a multiband effective-mass approach, taking into account the strain-induced splitting.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101132
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  • 2
    Electronic Resource
    Electronic Resource
    Resonant coupling of orbital angular momentum components in the barrier with analogous components in the well in InxGa1−xAs-GaAs quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 604-606 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When narrow InGaAs-GaAs quantum wells (QWs) are resonantly excited by the GaAs free exciton in the barrier, the intensity of the heavy-hole free exciton (HHFE) in the well oscillates with applied magnetic field. In the presence of a magnetic field, the magnetically field split angular momentum components of the GaAs barrier free exciton resonantly excite magnetically field split angular momentum components of the HHFE in the well. The angular momentum components of the HHFE in the well are expected to move in and out of resonance with the angular momentum components of the free exciton in the barrier as the magnetic field changes resulting in the observed intensity oscillations of the HHFE emission. When the QW is excited at energies slightly above the GaAs band-gap energy the HHFE emission intensity is greatly reduced and the intensity oscillations with magnetic field disappear.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111063
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  • 3
    Electronic Resource
    Electronic Resource
    Diamagnetic shifts of excitons associated with symmetric and antisymmetric wave functions in coupled InxGa1−xAs-GaAs quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2293-2295 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-optical data obtained from photoluminescence and photoluminescence excitation measurements performed in the presence of applied magnetic fields were used to determine the diamagnetic shifts of free excitons. The samples studied were coupled InxGa1−xAs–GaAs quantum wells. In all cases the excitons associated with antisymmetric wave functions were found to have larger diamagnetic shifts than the excitons associated with symmetric wave functions. This suggests that the excitons associated with antisymmetric wave functions have a smaller binding energy than excitons associated with symmetric wave functions. These properties are consistent with the fact that excitons associated with antisymmetric wave functions are less confined than excitons associated with the symmetric wave functions. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112997
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of In profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 540-544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular-beam-epitaxial growth of InxGa1−xAs on GaAs or AlyGa1−yAs leads to a variation of In content with depth, due to In segregation. However, by predepositing In at the beginning of InxGa1−xAs growth, and also thermally removing the excess In at the end, we can produce a layer with the ideal "square'' In profile. We find that the performance of AlyGa1−yAs/InxGa1−xAs/GaAs high electron mobility transistors is most enhanced by the predeposition step alone. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360862
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  • 5
    Electronic Resource
    Electronic Resource
    A comparison of electrochemical capacitance-voltage measurements with numerical simulations for pseudomorphic high electron mobility transistor structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2531-2536 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrochemical capacitance-voltage (EC-V) profiling is simulated numerically and the results compared with EC-V measurements for AlxGa1−xAs/InyGa1−yAs pseudomorphic high electron mobility transistor (p-HEMT) structures. The electrostatic potential is calculated at each etch step by solving the Poisson equation subject to surface pinning. The mobile charge is calculated within the Thomas-Fermi approximation. The calculated potential then forms the basis for the numerical EC-V, enabling the capacitance and apparent electron concentration to be computed. The reconstructed electron distribution has been compared with actual EC-V measurements on actual p–HEMT structures. The results affirm the ability of experimental EC-V to separate detailed features in the electron distribution, such as electrons localized in the δ layer and channel of p–HEMTs. Essentially, the reconstructed electron distribution is a warped version of the true distribution as determined from a self-consistent k⋅p calculation. In δ-doped p–HEMTs, for example, the separation between the charges in the δ layer and channel is less than the actual separation. This trend appears to agree with measured EC-V results. Subject to control over the etching uniformity, experimental EC-V should be capable of delineating detailed features in the electron distribution. Numerical EC-V has also been compared with standard capacitance-voltage (C-V) profiling. The reconstructed numerical C-V electron distribution agrees well with the numerical EC-V distribution. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360108
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  • 6
    Electronic Resource
    Electronic Resource
    Erratum: "Photoluminescence of Mg-ion implantation in low-temperature grown GaAs'' [J. Appl. Phys. 75, 2628 (1994)] (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2563-2563 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358543
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  • 7
    Electronic Resource
    Electronic Resource
    Magneto-Hall characterization of delta-doped pseudomorphic high electron mobility transistor structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 328-331 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conventional Hall-effect determination of the two-dimensional electron gas (2DEG) concentration n2D in pseudomorphic high electron mobility transistor structures is invalid because of interference from the highly doped GaAs cap. Furthermore, the usual methods of dealing with this cap-interference problem, namely, (1) etching off the cap totally, (2) etching the cap until the mobility reaches a maximum, or (3) growing a separate structure with a thin, depleted cap, in general, give n2D values that are too low. However, we show here that magnetic-field-dependent Hall (M-Hall) measurements can separately determine the carrier concentrations and mobilities in the cap and 2DEG regions, as verified by comparison with a self-consistent, four-band, k⋅p calculation and also by electrochemical capacitance-voltage measurements in structures with different cap and spacer thicknesses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357148
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence of Mg-ion implantation in low-temperature grown GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2628-2632 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence properties of Mg-ion implanted layers of low-temperature (179–400 °C) grown molecular beam epitaxial GaAs are reported. The Mg incorporation into the Ga site mainly produces the Mg-related donor-acceptor pair transition. The Mg incorporation depends strongly on the growth temperature of the layers. Mg trapping at defect centers formed by the excess As increases exponentially with the increase of the reciprocal growth temperature and is the dominant mechanism for the failure of Mg to incorporate into the Ga site. The possibility of the trapping center for Mg being the Asin-related defect originating from As-rich growth of low temperature GaAs is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356238
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  • 9
    Electronic Resource
    Electronic Resource
    Analytical two-layer Hall analysis: Application to modulation-doped field-effect transistors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 311-314 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The classical magnetic-field-dependent Hall coefficient and conductivity equations are inverted to give the mobilities μ1 and μ2 and carrier concentrations n1 (or p1) and n2 (or p2) in two degenerate bands. The two-band solution holds for arbitrary magnetic-field strength as long as quantum effects can be ignored (i.e., kT(approximately-greater-than)(h-dash-bar)eB/m*), and it is argued that the analysis can also be applied to two separate layers up to reasonable field strengths. The results are used to determine the two-dimensional electron gas mobility and carrier concentration in a modulation-doped field-effect transistor with a highly doped cap layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354109
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of lattice mismatch and thermal annealing on deep traps and interface states in Ga0.92In0.08As(n+)/GaAs(p) heterojunctions (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4362-4366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the lattice-mismatch-induced defects on deep level traps in Ga0.92In0.08As(n+)/GaAs(p) heterojunction diodes have been studied by means of various deep level transient spectroscopy techniques and the frequency-dependent capacitance-voltage (C-V-f) characteristics. Three hole traps at 0.58, 0.42, and 0.27 eV were observed. We attribute the 0.42 eV trap to Cu impurity, the 0.58 eV trap to VGa or Fe, and the 0.27 eV trap to a complex associated with the 0.42 and 0.58 eV traps. Depth profiles of these hole traps in the GaAs side were measured in different lattice-mismatched samples. The depth profile data near the interface and from deep inside the bulk show evidence of impurity gettering by the mismatched interface. We also found that the concentrations of these traps were reduced by rapid thermal annealing. A U-shaped energy distribution of the interface states was obtained from the C-V-f measurements. For an in-plane mismatch greater than 0.25%, the interface state density shows no obvious dependence on the in-plane lattice mismatch, while at smaller mismatch the interface state density increases with increasing mismatch. The interface state density was on the order of 1011 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352821
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