ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Theoretical consideration for technologically important phenomena in defect engineering of Czochralski silicon was performed with first principles calculation. (i) Point defect behaviour during crystal growth, (ii) enhanced oxygen precipitation in p/p+ epitaxial wafers, and (iii) Cu gettering by impurities are main topics in this work. Following results are obtained. (i) Interstitial Si I is dominant in p type Si while vacancy V is dominant in n type Si during crystal growth when dopant concentration is higher than about 1x1019atoms/cm3. (ii) In initial stage of oxygen precipitation including a few interstitial oxygen (O) atoms, BOn complex is more stable than On complex. The diffusion barrier of O atom in p+ Si is reduced to about 2.2eV compared with the barrier of about 2.5eV in intrinsic Si. (iii) In substitutional B, Sb, As, P and C atoms, only B atom can be an effective gettering center for Cu
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/21/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.108-109.365.pdf
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