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  • 1
    ISSN: 1432-0630
    Keywords: 61.70 Wp ; 61.70 Yq ; 64.75.+g ; 66.30 Jt ; 66.30 Lw
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Floating-zone Si crystals enclosed in quartz ampoules were exposed to Zn vapour released by an elemental diffusion source. Penetration profiles of Zn in Si were recorded using the spreading-resistance technique or neutron activation analysis. Both the erfc-type distributions observed in plastically deformed specimens and the non-erfc profiles determined on dislocationfree wafers are consistently interpreted within the framework of the kick-out model. As an implication, Si self-interstitials generated in excess by interstitial-to-substitutional transitions of in-diffusing Zn atoms annihilate not only at the surface but also at dislocations. On the other hand, dislocation-induced segregation of Zn appears to be rather minor, as revealed by transition electron microscopy. Combining the Zn incorporation rate in dislocation-free Si with solubility data from saturated specimens yields the self-interstitial contribution to the Si self-diffusion coefficient.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0630
    Keywords: PACS: 78.70; 61.70; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  We have measured positron lifetime and Two Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) distributions of Floating-Zone grown (FZ) Si specimens containing divacancies (V2) with the definite charge states, V0 2, V-1 2 or V-2 2 from room temperature to about 10 K. These charge states are accomplished by an appropriate combination of dopant species, their concentration and irradiation doses of 15 MeV electrons with reference to the currently accepted ionization level of divacancies. The positron lifetime of the negatively charged divacancy increases with temperature, while that of the neutral divacancy shows little change with temperature. The positron trapping rate, obtained from lifetime and 2D-ACAR measurements, increases markedly with decreasing temperature. This is found not only for the negative divacancies but also for the neutral divacancy. We need a model which explains this temperature dependence. The 2D-ACAR distribution from positrons trapped at divacancies shows nearly the same distribution for the different charge states, which differs considerably from the case of As vacancies in GaAs studied by Ambigapathy et al. We have observed a small but definite anisotropy in the distribution of trapped positrons in V- 2 using a specimen containing oriented divacancies.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 86 (1979), S. 735-741 
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Clinica Chimica Acta 159 (1986), S. 77-82 
    ISSN: 0009-8981
    Keywords: Adrenoleukodystrophy ; Dried blood spot on filter paper ; Mass chromatography ; Very long chain fatty acids
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Clinica Chimica Acta 170 (1987), S. 305-314 
    ISSN: 0009-8981
    Keywords: GC/MS/SIM ; Plasma level monitoring ; o, p'-DDA ; o, p'-DDD ; o, p'-DDE
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Chemical Physics Letters 207 (1993), S. 132-136 
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1164-1168 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitation spectra have been measured at various temperatures for the intense luminescence lines at 1200 and 1320 nm which are observed in samples of Si-doped GaAs annealed at 900 and 500 °C, respectively. The excitation spectra of the 1200 nm line at 6 K has a sharp peak at 1.490 eV followed by a broad background component on the lower-energy side. This peak corresponds to the electronic excitation of donor (Si at Ga atom site) -acceptor (Si at As atom site) pairs in the crystal. The excitation spectra of the 1320 nm line at 6 K shows two peaks at 1.49 and 1.39 eV. The experimental results show clearly that the creation of donor-acceptor pairs in the above Si impurity complex is the major process of electronic excitation which leads to the intense luminescence at longer wavelengths such as 1200 and 1320 nm.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7882-7888 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocations were introduced into silicon crystals by mechanical scratching at room temperature. The optical property of such dislocations was investigated by means of cathodoluminescence. Neither deformation-induced luminescence nor the exciton luminescence was detected in the scratched region, showing that a high density of nonradiative recombination centers is induced on or around dislocations. Hydrogen plasma treatment of a scratched crystal led to the appearance of the so-called D1–D4 luminescence lines along the scratch. Deep-level transient spectroscopy revealed that deep traps were induced by scratching and diminished drastically due to subsequent hydrogen plasma treatment. Thus, it was concluded that hydrogen passivated nonradiative recombination centers but not the luminescence centers. The characteristics in spatial distribution of D1 and D2 lines and those of D3 and D4 lines showed that these two groups of luminescence lines were of different origins. Since the specimens used were thought to be free from metal contamination, the luminescence was not related to metallic impurities incorporated in the dislocation core. The nonradiative recombination centers induced by scratching were annihilated due to annealing at temperatures higher than 500 °C. The release of hydrogen from the nonradiative centers in a hydrogenated specimen did not take place before they were annihilated by annealing. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4540-4546 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of Cu precipitation on various types of defects associated with oxygen precipitation in Czochralski-grown silicon are investigated by transmission electron microscopy and the electron-beam-induced-current technique. Specimens containing dominantly either punched-out dislocations or bulk stacking faults were intentionally contaminated with Cu at various temperatures and cooled at three different rates. Colonies of Cu precipitates developed irrespective of cooling rate, apparently originating from punched-out dislocations developed around oxygen precipitates. In heavily contaminated specimens cooled fast from the contamination temperature, Cu also precipitates on Frank partial dislocations bounding stacking faults. During slow cooling, precipitation of Cu takes place on Frank partials only in lightly contaminated specimens but never in heavily contaminated specimens. Cu precipitates in colonies are thermally more stable than those formed on Frank partials. It is concluded that punched-out dislocations are more favorable precipitation sites for Cu than Frank partials.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7347-7350 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Far-infrared absorption has been investigated in n-type Czochralski-grown silicon saturated with hydrogen and then irradiated with fast electrons. Two series of absorption bands in the range 200–330 cm−1 are observed upon postirradiation annealing of the crystals at 300–550 °C. These bands are associated with ground–to–excited-state electronic transitions in two kinds of shallow donors with ionization energies of 37.0 and 42.6 meV, which are described well with the effective-mass approximation. These donors are related to defects observed earlier in electrical measurements. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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