Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Displacement damage equivalent to dose in silicon devices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 451-453 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Particle-induced displacement damage effects in silicon bipolar transistors, including those due to electrons and to fission neutrons, are correlated on the basis of the nonionizing energy deposited in the lattice by the primary knock-on atoms. Deviations from linearity between damage effects and energy deposition are in a direction opposite to those expected from defect cluster models but can be accounted for in terms of the fraction of vacancy-interstitial pairs initially formed that survive recombination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100949
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Effect of particle-induced displacements on the critical temperature of YBa2Cu3O7−δ (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1469-1471 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The particle-induced depression of the superconducting critical temperature Tc of YBa2Cu3O7−δ is shown to be directly proportional, over seven orders of magnitude, to the nonionizing energy deposited in the lattice by primary knock-on atoms displaced by incident electrons, protons, and heavy ions. It is concluded that ΔTc is proportional only to the average number of defects produced and can therefore be predicted for any particle, energy, and fluence from a calculation of the nonionizing energy loss.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102287
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Effect of proton irradiation on the critical current and resistance of high Tc grain boundary Josephson junctions (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 511-513 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects of defects on the critical current and resistance of high Tc grain boundary Josephson junctions using irradiation with 2-MeV protons. Radiation-induced defects cause the critical current (Ic) to decrease and the shunt resistance (R) to increase such that IcR∝1/R. The data are consistent with a tunneling barrier height increasing with fluence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111089
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Radiation-induced reverse dark currents in In0.53Ga0.47As photodiodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7244-7249 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse dark current-voltage (dark I-V) curves of InGaAs photodiodes have been measured as a function of temperature following irradiation with 1-MeV electrons. Prior to irradiation, the I-V curves are well described by a diffusion term alone indicating that the junctions are of good quality. Irradiation produces a large increase in the generation current which can be modelled as resulting from a single defect center with an energy Ec−0.29 eV. Such a defect center called E2 has been detected using deep level transient spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354012
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Time-resolved photoluminescence of undoped InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4249-4251 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Energy and time-resolved photoluminescence data have been obtained for nominally undoped (n 4.5×1015 cm−3) bulk InP grown by the vertical-gradient freeze method. The data were taken as a function of temperature, from 80 to 290 K, and analyzed using a solution to the continuity equation. The resulting lifetime values range from 300 ns to 3.2 μs, and surface recombination velocities were fund to be on the order of 103 cm/s. The temperature dependence can be explained by assuming a radiatively limited recombination with a resulting B coefficient ≥5.9×10−11 cm3/s at 300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355962
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Degradation and annealing of electron-irradiated diffused junction InP solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7368-7375 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degradation and annealing properties of 1 MeV electron-irradiated n+p diffused junction InP solar cells are reported in detail. The solar cells were characterized through current–voltage measurements under simulated solar illumination at 1 sun, AM0. The radiation-induced defect spectra were characterized through deep level transient spectroscopy. At fluences up to 1015 cm−2, cell degradation was primarily due to a decrease in the short-circuit current Isc which occurred during the introduction of the hole trap, H4. Most of this degradation could be removed by minority-carrier injection annealing of the H4 defect at temperatures as low as 225 K. At higher irradiation fluences, up to 1016 cm−2, cell degradation was dominated by a decrease in both the open-circuit voltage Voc and the fill factor. This degradation was caused by a large radiation-induced recombination current and by carrier removal which was associated with the introduction of the hole trap H5 and the electron traps EA, EC, and ED. Most of the effects of the recombination current and some of the carrier removal were removed by concurrent injection and thermal annealing between 373 and 400 K where the residual H4 defect concentration and the H5 defect were removed. Essentially full cell recovery was achieved after subsequent annealing between 450 and 500 K where the electron traps also showed a partial annealing stage. Thermal annealing without illumination in the range of 350–500 K showed the same defect annealing stages suggesting that the cell recovery in this temperature range is due solely to thermal annealing. The data are summarized to give a model for the radiation-induced degradation and annealing of these InP solar cells. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360386
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Time dependence of radiation-induced generation currents in irradiated InGaAs photodiodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1629-1635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of the reverse bias current-voltage curves of 1 MeV electron irradiated In0.53Ga0.47As photodiodes has been measured at 300 K. The observed decay is shown to be correlated with the reduction of the E2 peak height with time, as measured by deep level transient spectroscopy. The reverse current is found to decay with a logarithmic time dependence, which can be explained by a model in which the annealing of the E2 defects is controlled by a distribution of thermal energy barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354812
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Electron irradiation of two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2173-2176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented for 1 MeV electron-irradiated, two terminal, monolithic InP/Ga0.47In0.53As tandem solar cells. These highly efficient prototype cells show radiation resistance that is comparable to single junction InP cells. A current mismatch between the subcells does not occur until high fluence levels, that is, near 3×1015 e−/cm2. This value for the onset of current mismatch and the measured remaining absolute efficiency of 9.4% at 1×1016 e−/cm2 are excellent results reported for a tandem cell designed for space applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358795
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Effect of carrier concentration on the properties of irradiation-induced defects in p-type indium phosphide grown by metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4201-4207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level transient spectroscopy has been used to monitor the effect of carrier concentration on the properties of radiation-induced defects in InP n+p mesa diodes grown by metalorganic chemical vapor deposition. The activation energy Ea for hole emission from H4 and H5 centers and the injection-enhanced annealing rate of H4 at 200 K have been measured as a function of carrier concentration NA over the range ∼1×1016– 4×1017 cm−3. The measured values of Ea decrease with increasing NA in a way that can be semi-quantitatively explained by a combination of the Frenkel–Poole effect and phonon-assisted tunneling produced by the electric field in the junction. The results suggest that hole emission from H4 and H5 centers takes place to maxima in different valence bands. The injection-enhanced annealing rate of H4 centers increases with increasing NA at low concentrations, but approaches a maximum value near NA ∼ 1017 cm−3, indicating a limiting dopant (Zn) concentration for impurity-enhanced defect annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351386
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy study of proton irradiated p-type InP (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6488-6494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A deep level transient spectroscopy study of proton irradiation induced defects in n+p InP mesa diodes grown by metalorganic chemical vapor deposition is reported. In contrast to results reported for InP grown by other methods, 3 MeV proton irradiation produced a DLTS spectrum similar to 1 MeV electron irradiation with the addition of two new peaks. Six majority carrier peaks: HP1(Ea=0.15 eV), H2(Ea=0.20 eV), H3(Ea=0.30 eV), H4(Ea=0.37 eV), H5(Ea=0.54 eV), and H7(Ea=0.61 eV) and three minority carrier peaks: EA(Ea=0.26 eV), EB(Ea=0.74 eV), and EC(Ea=0.16 eV) were detected. The H5 peak displayed a thermally activated capture cross section and a dependence of peak height on injection level. Isothermal annealing at 375 K was performed and thermal annealing rates are presented. Low temperature (200 K), minority carrier injection annealing rates are also presented. For most of the defects, a significant residual concentration remained after injection which could not be annealed further. An equation was developed for the annealing rate of the major defect, H4, as a function of injection level, carrier concentration, and temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348856
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...