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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1380-1385 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of GaInNAs/GaAs multi-quantum wells were investigated by photoluminescence excitation (PLE) spectroscopy, as well as by photoluminescence (PL), under various excitation intensities and at various temperatures. The PLE spectra demonstrated pronounced excitonic features and the corresponding transitions were identified. At low temperatures the PL spectra were sensitive to the excitation intensity. Under fixed excitation intensity, both the peak energy and the linewidth of photoluminescence showed anomalous temperature dependence, specifically an S-shaped temperature dependence of the peak energy and a N-shaped temperature dependence of linewidth in the PL spectra. The observed results are explained consistently in terms of the exciton localization effect due to the local fluctuations of nitrogen concentration. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 164-166 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous KNbO3 films are prepared by a low-cost sol–gel method. These films show a smooth surface morphology and have good waveguiding properties. Ferroelecticlike hysteresis loops are observed in these amorphous KNbO3 films with a remanant polarization of about 6μC/cm2. After corona poling, a stable effective second harmonic generation coefficient of 0.523 pm/V is achieved. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1993-1997 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of confinement on the exciton binding energies has been systematically investigated for two series of ZnO/ZnMgO multiquantum wells with various well widths and barrier heights. The exciton binding energies were extracted from the energy difference between the stimulated emission band induced by inelastic exciton–exciton scattering and the free exciton absorption band. The binding energies of excitons are found to be sensitively dependent on the well widths. The experimental results of the well width dependence of binding energies are in good agreement with Coli and Bajaj's theoretical calculations for these structures [G. Coli and K. K. Bajaj, Appl. Phys. Lett. 78, 2861 (2001)]. The remarkable reduction in coupling strength between excitons and longitudinal optical phonons is closely correlated with the enhancement of the exciton binding energy, indicating that the stability of excitons is greatly increased by the enhancement of exciton binding energy in quantum wells. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2287-2289 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An alternative approach to the synthesis of mono-sized and parallel-aligned single-wall carbon nanotubes (SWCNs) is reported. The SWCNs are formed in 0.73 nm sized channels of microporous aluminophosphate crystallites by pyrolysis of tripropylamine molecules in the channels. They are characterized through transmission electron microscopy, polarized Raman scattering, and electrical transport measurements. Our results would open a door to further detailed studies on the intrinsic properties of carbon nanotubes now in progress. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2457-2459 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical absorption spectra of Se chains formed in channels of AlPO4-5 (AFI) crystals are measured in the temperature range from 80 to 298 K. The excitonic energy of the isolated Se chains is observed to shift to lower energy linearly with increasing temperatures, in sharp contrast to the positive temperature coefficient in trigonal-Se crystal. The marked change in the temperature behavior of the excitonic energy is attributed to the greatly diminished interchain interaction in Se–AFI as well as the weakening of the electron-optical-phonon coupling in a low-dimensional system. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2464-2466 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The excitonic properties of high-quality ZnO/Zn0.88Mg0.12O multiquantum wells grown by laser-molecular-beam epitaxy were investigated using temperature-dependent optical absorption spectra from 5 K to room temperature. The strength of exciton-longitudinal-optical (LO) -phonon coupling was deduced from the temperature dependence of the linewidth of the fundamental excitonic peak. Effective reduction of the exciton-LO-phonon coupling with decreasing the well width was observed, which is consistent with the confinement-induced enhancement of the exciton binding energy. The thermal shift of the lowest excitonic energy is independent of well width, indicating that the strain effect is negligible for this material. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1979-1981 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on temperature dependence of excitonic photoluminescence (PL) from ZnO/(Mg, Zn)O multiple quantum wells (MQWs). Two kinds of MQWs having different barrier heights grown by laser molecular-beam epitaxy showed significantly different temperature dependences of PL spectra; in ZnO/Mg0.27Zn0.73O MQWs, the PL peak energy at 50–200 K was a monotonically increasing function of temperature, which was opposite to that ascribed by band gap shrinkage. Moreover, spectra taken at 95–200 K encompassed two peaks, both of which originated from recombination of localized excitons. The temperature-induced shift (redshift-blueshift-peak duplication-redshift) at 5–300 K is caused by a change in the exciton dynamics with increasing temperature due to inhomogeneity and the exciton localization effect. On the other hand, the corresponding dependence in ZnO/Mg0.12Zn0.88O MQWs (lower barrier height) was similar to that in bulk II–VI semiconductors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3385-3387 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescence due to the radiative recombination of localized biexcitons has been observed at low temperature (5 K) in ZnO/Zn0.74Mg0.26O multiquantum wells grown by laser-molecular-beam epilaxy on a lattice-matched ScAlMgO4 substrate (0001). The emission components due to the recombination of localized excitons and biexcitons and due to the exciton–exciton scattering were verified by examining their relative energy positions and intensity dependence on excitation power density. The excitation threshold for biexciton emission was significantly lower than that for exciton–exciton scattering. The binding energy of biexcitons in multi-quantum wells is largely enhanced by quantum confinement effect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 975-977 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the optical properties of ZnO/(Mg, Zn)O multiple quantum wells (MQWs) on lattice-matched ScAlMgO4 substrates fabricated by laser molecular-beam epitaxy. As the well layer thickness decreased down to 7 Å, the photoluminescence (PL) and absorption peaks showed a systematic blueshift, consistent with the quantum-size effect. Moreover, a bright PL of free excitons could be observed even at room temperature. As a result, the PL could be tuned in the energy range of 3.3–3.6 eV by choosing the appropriate barrier height and well layer thickness. The widest tunability on the room-temperature luminescence of the excitons could be attained on the basis of the ZnO quantum structure. These favorable properties could not be attained in the MQWs on lattice-mismatched sapphire substrates. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4250-4252 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of ultraviolet stimulated emission was investigated in ZnO/ZnMgO multiquantum wells. Stimulated emission induced by exciton–exciton scattering occurred throughout a range of temperatures from 5 K to room temperature. At temperatures higher than 160 K, stimulated emission due to electron-hole plasma recombination was also observed with a higher excitation threshold than that of exciton–exciton scattering. The exciton binding energies of multiquantum wells were larger than that of bulk ZnO and increased with a decrease in the well widths. This enhancement of exciton binding energy is due to the quantum-confinement effect and is favorable for the stability of exciton states. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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