ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The impurity concentration dependence of the recrystallization rate of phosphorusimplanted 4H-SiC(11-20) has been investigated by means of Rutherford backscatteringspectrometry in the annealing temperature range from 660 to 720 oC . The phosphorus ions weremultiply implanted to form the implantation layer with the thickness of 200 nm and the phosphorusconcentration of 1 x 1020, 4 x 1020, or 1 x 1021 /cm3, respectively. The recrystallization rate of the Pion implantation-induced amorphous layer in 4H-SiC(11-20) increases with an activation energy of3.4 eV as does the case of the Ar ion implantation-induced amorphous layer in 6H-SiC(11-20) and(1-100). As the P concentration is increased from 1 x 1020 to 1 x 1021 /cm3, the recrystallization rateis enhanced from 3.5 to about 5nm/min, while the recrystallization rate for the Ar implantationinducedamorphous layer was 1.5 nm/min. It is suggested that the recrystallization process isenhanced by the presence of the substitutional impurity at the amorphous-crystalline interfaceduring the recrystallization
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.799.pdf
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