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  • 1
    ISSN: 1432-1831
    Keywords: Key words Borna disease virus ; Cattle ; Peripheral blood mononuclear cells ; Reverse transcriptase-polymerase chain reaction
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract We examined natural infection of Borna disease virus (BDV) in 74 healthy dairy cattle in Japan. The seroprevalence determined using recombinant BDV p24 protein was 20.3%. The prevalence of BDV RNA in peripheral blood mononuclear cells (PBMCs) determined by polymerase chain reaction for p24 was 10.8%. Cell fraction of the PBMCs revealed the presence of BDV RNA in the T cell-enriched fraction. Thus, BDV infection is wide-spread even among healthy cattle.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-1211
    Keywords: DNA-dependent protein kinase catalytic subunit (DNA-PKcs) Severe combined immune deficiency (SCID) Phosphatidylinositol 3-kinase (PI3K) MCM4
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract. The gene for the catalytic subunit of DNA-dependent protein kinase (DNA-PKcs) is responsible for severe combined immune deficiency (SCID) and its products associate with Ku70/Ku86 autoantigens, c-Abl, and other factors to exert its roles. Investigations to date suggest that DNA-PKcs comprises several regions which specifically interact with these known and other as yet unidentified factors. Nevertheless, the relationship between the structure and function of the DNA-PKcs molecule is poorly understood. Here we report cloning of the entire DNA-PKcs cDNA from chicken and Xenopus laevis. Comparative study of the DNA-PKcs polypeptides from four different vertebrates revealed at least three novel conserved regions in addition to the carboxyl-terminal region containing the phosphatidylinositol-3 kinase domain. We also demonstrated that the four vertebrates share the common genomic organization between a licensing factor, MCM4, and DNA-PKcs, both of which locate in a head-to-head manner within a few kilobase intervals. These data provide useful clues for the further genetic study of this huge multifunctional enzyme.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1051-1053 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of photoconductance in electron-irradiated semi-insulating GaAs grown by the magnetic-applied liquid-encapsulated Czochralski technique is studied in terms of the electron-irradiation-induced defects. A decrease in photoconductance for samples annealed at 350 °C is attributed to the interband transition of the photoexcited electrons within the electron-irradiation-induced defect observed at around 0.98 eV using infrared absorption spectroscopy. The recovery of the photoconductance for samples annealed above 400 °C is enhanced by the annihilation of the 0.98-eV defect, accompanied by the photoquenching of the photoconductance below 140 K. An unquenchable component in photoconductance appeared by an annealing above 600 °C is proposed to be a VAs-CAs complex by photoluminescence measurements.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 843-845 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cation antisite defects produced in semi-insulating GaAs by 30-MeV electron irradiation were studied using a photoluminescence (PL) method. PL emissions associated with a double acceptor GaAs, lying at 78 and 200 meV above the valence band, were observed at 860 and 935 nm in 600 °C annealed samples. The former emission is a prominent spectrum with its phonon replica at 880 nm, whereas the latter is buried in broad emissions consisting of the defect complexes such as the VAs-CAs complex. The electron irradiation-induced GaAs defects are ∼102 times smaller than those produced in neutron irradiated semi-insulating GaAs.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 746-748 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evaluation of the copper related complex defects in copper-diffused semi-insulating GaAs was studied using thermally stimulated current (TSC) method. Two new TSC traps, T1 (ionization energy 0.25 eV) and T2 (0.52 eV), are observed. These traps are consistent with two acceptor levels evaluated by van der Pauw method and samples change p as the T2 trap appears with increasing copper content. These results suggest that the shallower T1 trap compensates not only the midgap electron trap (EL2 defect) but also the deep T2 trap. The relative photoionization cross sections, which have a maximum at around 940 nm (1.32 eV) for the T1 trap and at around 1400 nm (0.89 eV) for the T2 trap, respectively, are obtained. Origins of these traps are also discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3617-3619 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the preparation of high quality GaN films using dimethylhydrazine as a nitrogen source. GaN films were deposited on (0001) sapphire substrates by low-pressure metalorganic chemical vapor deposition. The film has excellent morphology in flat surface free from cracks. The full width at half maximum of the x-ray diffraction rocking curve measured from (0002) plane of GaN has exhibited as narrow as 147 arcsec. The optical quality of the film is concluded to be excellent from the photoluminescence property measured at room temperature, where the intensity of the band edge emission is much stronger than that of deep level emission. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1572-994X
    Keywords: HIV-1 ; monocyte ; differentiation ; U937 ; unintegrated viral genome ; virus load
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Our previous report showed that U937-derived subclones were differentiated into at least three types (high, middle, and low types), even in the subclones expressing similar levels of surface CD4, in terms of the kinetics of the appearance of viral antigens and virus production after infection with human immunodeficiency virus type 1 (HIV-1). Here we showed the evidence that high susceptibility to HIV-1 infection, which was confirmed by the profound expression of viral messages and antigens, was exclusively associated with a high number of the unintegrated extrachromosomal form of viral DNA, but not with the amounts of adsorbed virus RNA nor those of integrated DNA form. The difference in the amounts of extrachromosomal form of viral DNA was also observed in the culture with 3′-azido-3′-deoxythymidine (AZT), indicating that the susceptibility is essentially unrelated to multiple infection events. Thus, the susceptibility of U937-derived subclones to HIV-1 infection seems to be affected by the occurrence of specific events involved in the accumulation of unintegrated viral DNA after viral adsorption.
    Type of Medium: Electronic Resource
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