Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 45 (1989), S. 870-878 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The method proposed by Chang & Tang [Acta Cryst. (1988), A44, 1065-1072] for quantitative determination of phases of X-ray reflection from three-beam diffraction profiles is applied to an organic crystal of (2R, 3 R)-3-acetoxy-5,7-dihydroxy-6-methylflavanone, with a mosaic spread of 0.08°. The expression for the kinematical diffraction intensities is modified according to the kinematical theory of X-ray diffraction in the multibeam regime. Three-beam Umweganregung and Aufhellung diffraction profiles are analyzed. With the help of the modified intensity expression, the crystal symmetry imposed by the space group and the three-beam diffraction geometry, four acentric phases and fourteen centric phases of structure-factor triplets are determined.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 44 (1988), S. 1073-1078 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The method proposed by Chang & Tang [Acta Cryst. (1988). A44, 1065-1072] of quantitative determination of X-ray reflection phases from multiple diffraction profiles is applied to nearly perfect crystals of gallium arsenide. The detailed intensity-profile-analysis procedures are given. Multiple diffraction profiles obtained with a conventional X-ray source and synchrotron radiation are subjected to this analysis. It is found that, for this particular diffraction example, errors as small as 15° in phase determination are achieved. Errors due to the theoretical approximation, peak position measurement and scaling factor are also discussed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 44 (1988), S. 1065-1072 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: A method of quantitative determination of X-ray reflection phases using three-beam multiple diffraction is described. This method is derived from the dynamical theory of X-ray diffraction. First-order approximation is employed to take care of the multi- beam diffraction situation. Polarization and excitation of wave fields and the Lorentz factor of crystal rotation are considered. For practical purposes, instrumental broadening and crystal mosaicity are included in calculating the diffraction intensity profiles. It is found that in the theoretical formulation the phase-dependent (dynamical) diffraction distribution can be separated from the phase-independent (kinematical) diffraction background. This makes possible the quantitative determination of reflection phases.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 143 (1990), S. 405-408 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxynitrides can suppress the diffusion of boron from the polycrystalline silicon gate electrode to the channel region of an ultralarge scale integrated device, and are therefore important potential substrates for thin SiO2 gates. Direct oxynitridation of Si in N2O is a simple and manufacturable N incorporation scheme. We have used rapid thermal oxidation to grow O2- and N2O-oxides of technological importance (∼10 nm thick) in the temperature range 800–1200 °C. Accurate measurements of the N content of the N2O-oxides were made using nuclear reaction analysis. N content increases linearly with oxidation temperature, but is in general small. A 1000 °C N2O-oxide contains about 7×1014 N/cm2, or the equivalent of about one monolayer of N on Si (100). Nonetheless, this small amount of N can retard boron penetration through the dielectric by two orders of magnitude as compared to O2-oxides. The N is contained in a Si-O-N phase within about 1.5 nm of the Si/SiO2 interface, and can be pushed away from the interface by O2-reoxidation. We have measured Si/SiO2 interfacial roughness by x-ray reflectometry, and found that it decreases with increasing oxidation temperature for both O2- and N2O-oxides, although the N2O-oxides are smoother. The enhanced smoothness of N2O-oxides is greater the greater the N content. N2O-oxides are promising candidates for thin ultralarge scale integrated circuit gate dielectrics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 28 (1995), S. 318-326 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Angle calculations are presented for a new type of diffractometer, which has two degrees of freedom for the sample and two degrees of freedom for the detector. The sample and detector motions are mechanically uncoupled. This geometry is used to implement a surface diffractometer and the corrections necessary to extract integrated intensities in two of the most useful modes are presented. The relative merits of this geometry and further extensions to it are discussed. Experimental data, showing the existence of an interfacial microstructure at the Si/SiO2 interface, are also presented to illustrate the advantage of this geometry.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 45 (1989), S. 703-708 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: An analytical expression for the intrinsic peak width of three-beam Bragg diffraction involving a surface reflection is derived on the basis of the dynamical theory of X-ray diffraction. Utilization of this expression in peak intensity measurements is proved to lead to direct determination of the enantiomorph of the triplet structure-factor invariant involved in a three-beam Bragg-surface diffraction. Effects of polarization on the kinematical peak intensity and on the intrinsic peak width are also discussed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...