ISSN:
1432-0630
Keywords:
68.55.Bd
;
68.55.Jk
;
78.65.Fa
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We propose a new method to considerably reduce the overall growth interruption for high-quality GaAs single quantum wells during molecular beam epitaxy. The insertion of ultrathin AlAs smoothing layers at the constituent GaAs/Al x Ga1−x As heterointerfaces and growth interruptions of not more than 15 s yields an improvement of the luminescence linewidth (FWHM) to 0.56 meV for a 13 nm wide GaAs well and to a value as low as 0.195 meV for a 27 nm wide GaAs well. In addition, no Stokes shift between absorption and emission and no line splitting due to monolayer fluctuations in the well width is observed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00323730
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