ISSN:
1573-4854
Keywords:
porous silicon
;
synchrotron radiation
;
coulomb blocade
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract In this paper we demonstrate that photo-electron emission excited by X-UV synchrotron radiation can be used as a “contactless” probe of the gross conduction processes in porous silicon. Moreover we demonstrate that this approach reveals the underlying conduction geometry. We show that conduction in porous silicon is to some degree controlled by percolation phenomena and finally present data which support the notion that the fundamental blocking process may be Coulomb Blockade [P.A. Lee, Physica B 189, 1–5 (1993); D. Ali and H. Ahmed, Appl. Phys. Lett. 64, 2119–2120 (1994)].
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1009667627705
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