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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Mathematische Annalen 240 (1979), S. 39-40 
    ISSN: 1432-1807
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 210-213 (May 1996), p. 573-580 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK and Malden, USA : Blackwell Science Ltd
    BJOG 112 (2005), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Objective  To evaluate the effectiveness of an empowerment intervention in reducing intimate partner violence (IPV) and improving health status.Design  Randomised controlled trial.Setting  Antenatal clinic in a public hospital in Hong Kong.Sample  One hundred and ten Chinese pregnant women with a history of abuse by their intimate partners.Methods  Women were randomised to the experimental or control group. Experimental group women received empowerment training specially designed for Chinese abused pregnant women while the control group women received standard care for abused women. Data were collected at study entry and six weeks postnatal.Main outcomes measures  IPV [on the Conflict Tactics Scale (CTS)], health-related quality of life (SF-36) and postnatal depression [Edinburgh Postnatal Depression Scale (EPDS)].Results  Following the training, the experimental group had significantly higher physical functioning and had significantly improved role limitation due to physical problems and emotional problems. They also reported less psychological (but not sexual) abuse, minor (but not severe) physical violence and had significantly lower postnatal depression scores. However, they reported more bodily pain.Conclusion  An empowerment intervention specially designed for Chinese abused pregnant women was effective in reducing IPV and improving the health status of the women.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Contact dermatitis 38 (1998), S. 0 
    ISSN: 1600-0536
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Alta, a scarlet-red solution used by some Indian women as a cosmetic to colour their feet, was found to be associated with depigmentation at the site of application. Chromatographic and spectroscopic analysis of 3 brands of alta confirmed the presence of 2 dyes: Crocein Scarlet MOO (CSM) (brilliant crocein) and rhodamine B (tetraethyl rhodamine). Patch testing produced depigmentation at the site of application of alta, CSM and para-phenylenediamine (PPD). Although PPD has been reported to produce leukoderma, azo dyes have not previously been reported as depigmenting agents.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2299-2301 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial CuInSe2 (CIS) layers have been directly grown on Si substrates by molecular beam epitaxy. Epitaxial growth is achieved by using a proper thermal treatment of the substrate prior to the growth and also during the initial stage of CIS growth. (100)-oriented and (112)-oriented CIS layers with chalcopyrite crystal structure, and free from impurity phases have been obtained on Si(100) and Si(111), respectively. Different methods have been used to study the growth kinetics and structural quality of the epitaxial layers. Twinning in (112)-oriented CIS layers depends on the deposition recipe. A Rutherford backscattered ion channeling minimum yield of about 13%, and an x-ray rocking-curve width of about 900 arcsec have been measured for a 0.4 μm thick heteroepitaxial CIS(112) layer on Si(111) substrate. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1911-1916 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of PbSe on (111)- and (100)-oriented Si substrates without an intermediate buffer layer is studied. It is found that on Si(111) the orientation of the IV-VI layer can by varied from (100) at 200 °C to (111) at 400 °C substrate temperature. On Si(100), only (100)-oriented layers were obtained for the whole temperature range. (100)-oriented layers with thicknesses above 0.5 μm were cracked due to thermally induced mechanical strain on cooldown to room temperature. This strain cannot be relaxed by dislocation glide in the first glide systems as it is the case for (111)-oriented layers. The structural quality of (100)-oriented PbSe layers on Si(100) and Si(111) is inferior compared to layers grown with an intermediate BaF2/CaF2 or CaF2 buffer layer. This implies that the covalent/ionic PbSe/Si interface seems to impede high-quality epitaxy, contrary to the well known ionic/ionic IV-VI/IIa-fluoride interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6100-6106 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of (112) oriented CuInSe2 heteroepitaxial layers grown with molecular beam epitaxy on (111) oriented Si wafers was investigated by transmission electron microscopy. Experimental and calculated diffraction patterns of different zone axes were compared. Extra spots are caused by rotational twins on (112) growth planes. Six twin variants rotated by ±120°, ±60° and 180° about the [221] axis were identified in the layers. The tetragonal chalcopyrite structure of CuInSe2, the crystal symmetry of the substrate and variations of the growth conditions during the growth are responsible for the formation of these rotational twins. Coherent twin boundaries as well as partly coherent boundaries of twin variants rotated by ±60° and 180° were imaged by high resolution transmission electron microscopy. The boundaries can be formed by inserting partial dislocations with Burgers vectors a/6〈111¯〉 into the CuInSe2 structure. This suggests that the annealing of the samples induces the annihilation of these partial dislocations and consequently reduces the density of twins in the CuInSe2 layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: This is the first report on the development of interspecific hybrids between Trifolium alexandrinum and T. apertum using embryo rescue and characterization of F1 plants. T. apertum was used as the male parent and T. alexandrinum as the female parent. Development of interspecific hybrids under natural conditions is not successful and so embryo rescue was attempted. Of the several combinations tried, pollination 2 days after emasculation and embryos rescued 11 days after pollination was found to be the best. For embryo culture, EC3 medium consisting of MS basal supplemented with 2.3 μM kinetin and 3% sucrose was used. Germinated embryos were transferred to LSP3 medium 25 days after inoculation wherein most of the cultures showed multiple shoots that were split and subcultured on RL1 medium for rooting. After hardening, about 75% of hybrids were successfully transferred to the field. The hybrids, in general, showed morphological traits intermediate between the two parents; however, a few hybrids showed better growth than either parent. Some F1 plants were almost 3 weeks later in flowering than the female parent. Pollen fertility among these plants ranged from 78 to approximately 100%. Chromosomal associations at diakinesis and isozyme banding patterns for acid phosphatase (ACP), superoxide dismutase (SOD) and peroxidase also confirmed the hybrid nature of the plants.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5095-5098 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial superconducting YBa2Cu3O7−x (YBCO) thin films have been grown on Si(100) using CaF2 as an intermediate buffer layer. The CaF2(100) layers were grown by molecular beam epitaxy while for the YBCO layers a laser ablation process was used. Electron channeling patterns of the YBCO surface show the characteristic four-fold symmetry for c-axis orientation. The epitaxial relationship is (001)YBCO//(001)Si and [010]YBCO//[110]Si. This corresponds to a lattice mismatch of only 1% in the a-b-YBCO interface plane. The 60-nm-thick layers are crack free. Magnetic shielding properties of the epitaxial YBCO layers have been studied by measuring the zero temperature penetration depth λab(0) and the power law dependence of the transition temperature versus magnetic field.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1108-1110 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial CdTe (100) has been grown on (100) oriented Si by molecular beam epitaxy using BaF2-CaF2 as a buffer. Two-dimensional (2-D) growth of BaF2(100) is obtained using low-temperature thermal cycles during growth. CdTe growth is also 2-D above 270 °C substrate temperature and a 2×1 surface reconstruction indicating a Te-stabilized surface is obtained. The growth is 3-D at lower substrate temperatures. Good structural quality films showing sharp electron channeling patterns and pronounced photoluminescence at 77 K are obtained. The full width at half maximum of the band-edge peak is 12 meV at 77 K.
    Type of Medium: Electronic Resource
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