ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Impurity atoms in a high-purity semi-insulating 4H-SiC substrate fabricated by sublimationand an n-type 3C-SiC substrate fabricated by Chemical Vapor Deposition (CVD) were evaluated byneutron activation analysis. Cr, Fe, Zn, As, Br, Mo, Sb, Eu, Yb, Hf, Ta, W and Au atoms weredetected in the 4H-SiC fabricated by sublimation. In the 3C-SiC fabricated by CVD, Cr, Zn, As, Br,Mo, Sb, La Sm and Hf atoms were found. The concentration of these atoms tends to decrease withincreasing atomic number
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.457.pdf
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