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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3331-3333 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GdTbCo films were rf diode sputtered from a composite target varying the argon pressure PAr and the substrate bias voltage Vb. Both the uniaxial magnetic anisotropy constant Ku and the aging behavior of the films depend strongly on the preparation parameters. The absolute maximum of Ku was obtained at Vb=−150 V. However, at this bias voltage nearly the highest oxidation rate of unprotected 100-nm-thick films was observed. Films of highest stability are obtained without any bias voltage. The oxidation rate is correlated with the Ar concentration in the films. It was argued recently that the anisotropy of sputtered films could depend on argon incorporation. Our results seem to rule out this mechanism since GdTbCo films prepared at zero bias show a relative Ku maximum in dependence on PAr where the argon concentration is near its absolute minimum. The magneto-optic Kerr rotation θK of the films can only be correlated with the Co concentration for zero bias films. Some additional variation depending on the bias voltage has been observed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Fresenius' Zeitschrift für analytische Chemie 329 (1987), S. 391-394 
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Summary Sputter-deposited MoS2 films show excellent lubrication properties. Nevertheless, the film-substrate adherence is unsufficient and could not be improved by depositing interface layers. With the method of ion beam mixing by using argon and nitrogen beams of up to 400 keV energy a considerable enhancement of the endurance life was observed. Secondary ion mass spectrometry (SIMS) has been used to examine layers of 0.5 μm thickness. Variation of the ion species, dose and energy have been used for optimum endurance life. The results of tribological measurements compared to SIMS depth profiles are demonstrated and discussed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    X-Ray Spectrometry 14 (1985), S. 84-88 
    ISSN: 0049-8246
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A special electron microprobe data reduction procedure permits the determination of oxygen in vacuum-deposited metal layers independent of the surface oxide layer, the mass thickness of which is simultaneously calculated. The method combines measurements of O Kα x-rays at two values of the primary electron energy in the range 5-12.5 keV, which correspond to different depth distributions of x-ray production. The measured data are evaluated by calibration curves derived from Gaussian Φ(ρz) depth distribution functions. Test analyses have been performed on amorphous metal layers with thicknesses of 0.5-1.5 μm. Typical concentrations of incorporated oxygen found ranged from 0.1 to 5 wt-%. The influences of surface oxide films with mass thicknesses of 1-30 μg cm-2 were studied by annealing experiments in agreement with the results derived from oxygen depth profiles measured by secondary ion mass spectrometry.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 4 (1982), S. 14-17 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: In this study, secondary ion mass spectrometry (SIMS) has been used to investigate the interface inhomogeneities of several μm thick layers of magnetic garnets grown on non-magnetic garnet substrates. The epitaxial layers have the general composition Y3-x-zLaxPbzFe5-y Gay O12, whereas the substrate consists of Gd3Ga5O12. Bombardment of an insulator causes the sample to become charged, leading to loss of the secondary ion signal. This charge has to be compensated for by a simultaneous bombardment of the sample surface with electrons. The dependence of the Pb content (208Pb+) at the film-substrate interface has been investigated as a function of the dipping parameters and the lattice mismatch. Layers are grown onto films with identical melt compositions but with different supercoolings. In all cases an enhanced Pb concentration at the beginning of the film growth process was found. With a specially grown inhomogeneous sample we were able to show the direct substitution of Pb and Y. The investigation of Ga within the transient layer is particularly difficult because of the high amount of this element in the substrate. The calibration of the count rate scale into formula units has been achieved by electron probe microanalysis (EPMA).
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
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