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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 196-201 (Nov. 1995), p. 1109-1116 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3616-3623 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of ZnSe/ZnTe multiple quantum well-based pseudo-ohmic contacts to p-ZnSe was investigated using transmission electron microscopy and high-resolution transmission electron microscopy. In the case of samples consisting of five ZnSe/ZnTe multiple quantum wells, both pure edge Lomer dislocations and 60° dislocations were identified at the interface between the ZnSe/ZnTe multiple quantum wells and the ZnTe overlayer, along with partial dislocations bounding stacking faults. The dominant dislocations at the interface are Lomer dislocations. In the case of samples grown under group II-rich conditions, the interface exhibits corrugations. At the top and bottom of the corrugations, the Lomer dislocations are dominant and in the slope of the corrugations, 60° dislocations are dominant. In the case of samples grown using migration-enhanced epitaxy, V-shaped defects consisting of three dislocations associated with two stacking faults are formed. The total Burgers vector of the V-shaped defects is a〈100〉. The increasing total thickness and the number of ZnSe/ZnTe multiple quantum wells leads tend to make the dominant defects dissociated 60° dislocations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3421-3423 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated Si-doped GaN epitaxial layers on a (0001)-sapphire substrate using a HCl vapor-phase etching technique, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. Three kinds of distinctive etch pits correspond to three different types of threading dislocations, edge, mixed, and screw types. Photoluminescence intensity increases with the decrease in the number of etch pits corresponding to mixed and screw dislocations. The number of etch pits corresponding to edge dislocations, however, did not change. We concluded, therefore, that threading dislocations having a screw-component burgers vector act as strong nonradiative centers in GaN epitaxial layers, whereas edge dislocations, which are the majority, do not act as nonradiative centers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 636-638 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the dependence of crystallographic tilt and defect distribution on mask material in metalorganic chemical vapor deposition grown GaN layers formed utilizing an epitaxial lateral overgrowth (ELO) technique using x-ray diffraction and transmission electron microscopy. Crystallographic tilt in the ELO GaN layer was suppressed by changing the mask material from electron beam (EB)-evaporated SiO2 to plasma enhanced chemical vapor deposition (PECVD) grown SiO2 and PECVD SiNx. Defect distribution also changes in accordance with mask materials. By depositing a thin PECVD SiNx layer on the PECVD SiO2 mask, the crystalline quality of the ELO layer changes from that used with the SiO2 mask to that used with the SiNx mask. These results suggest that the interface between the ELO GaN layer and the mask has a significant effect on crystallographic tilt and defect distribution. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1824-1826 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect structure of optically degraded ZnCdSe quantum wells was investigated using transmission electron microscopy. The defects were composed of the dislocation dipoles with a Burgers vector of b=−(a/2)[101] inclined at 45° to the (001) plane. The dislocation dipoles consist of two segments aligned along the [11¯0] direction and the [120] direction. The [11¯0] dipole segments lying in the (111¯) plane were developed by the recombination-enhanced dislocation glide process, while the [1¯2¯0] dipole segments lying in the (2¯11) plane were developed by the recombination-enhanced dislocation climb process. Both processes operate simultaneously. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2938-2943 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface morphological changes in ZnSe-related II–VI epitaxial films grown by molecular beam epitaxy have been investigated by atomic force microscopy and transmission electron microscopy. We found that under group-II-rich conditions with c(2×2) surface reconstruction, the process of roughening gives rise to periodic elongated corrugations aligned in the [11¯0] direction. Under group-VI-rich conditions with (2×1) surface reconstruction, rounded grains form instead of corrugated structures. The surface morphology is dependent on the VI/II ratio and growth temperature, but is independent of the film strain. The observed morphological changes are mainly due to growth kinetics and are not stress driven. We propose a model to explain the changes in surface morphology under group-II-rich conditions and group-VI-rich conditions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1208-1210 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out structural studies of nonluminescent areas developed by current injection in ZnMgSSe alloy-based II–VI blue light emitting diodes by electroluminescence topography and transmission electron microscopy. The nonradiative regions, which spread out in the 〈100〉 direction during current injection, consist of a high density of dislocation dipoles and dislocation loops. The source of these defects is the preexisting stacking faults originating at the substrate/epilayer interface. The dipoles themselves are aligned along both of the 〈110〉 directions lying in the {111} plane. Their Burgers vectors were of the type (a/2)〈011〉 inclined at 45° to the (001) junction plane. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 12 (1989), S. 469-470 
    ISSN: 1434-6079
    Keywords: 36.40 ; 78.00
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In an extremely small metallic particle in which electron energies take discrete values, a light is absorbed by the surface plasmon which is not decayed by the surface scattering. The usually used relation between polarizability of a particle and electrical susceptibility does not hold.
    Type of Medium: Electronic Resource
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