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  • 1
    Electronic Resource
    Electronic Resource
    Virtual-surfactant-induced wetting in strained-layer heteroepitaxy (1993)
    Springer
    Applied physics 56 (1993), S. 91-94 
    Details
    ISSN: 1432-0630
    Keywords: 68.55.−a ; 61.14.Hg ; 82.65.Dp ; 61.50.Cj
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We show that surface stoichiometry and growth mode are intimately related for heteroepitaxy of InAs on GaO0.47In0.53As. Under As-stable conditions during molecular beam epitaxy, the high strain of the InAs film induces a morphological phase-transition from layer-by-layer to island nucleation. In contrast, under In-stable conditions without direct As4 flux, islanding is inhibited. The In-stabilized surface imposes limitations to the migration of both As and In adatoms and forces layer-by-layer nucleation, thus acting as a virtual surfactant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00351909
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  • 2
    Electronic Resource
    Electronic Resource
    Surfactant-Mediated MBE of Strained-Layer III-V Semiconductor Heterostructures (1993)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 32-33 (Dec. 1993), p. 129-140 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.32-33.129.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Time-resolved photoluminescence and steady-state optical investigations of a Zn1−x Cd x Se/ZnSe quantum well (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1435-1440 
    Details
    ISSN: 0392-6737
    Keywords: Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter ; Photoluminescence ; II–VI compounds and other chalcogenides ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We report on time-integrated and time-resolved optical experiments performed on a 26 Å thick Zn0.85Cd0.15Se/ZnSe quantum well, for temperatures in the 10–200 K range. Excitation spectroscoy allows an estimation of the relative valence band offset, which is found to be 10%. From the temperature variation of the decay time of the photoluminescence performed reasonantly on the e1h1 excitonic transition, we deduce that the main non-radiative mechanism is the heavy-hole thermal escape out of the well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457223
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  • 4
    Electronic Resource
    Electronic Resource
    Structural and optical characterization of ZnSe single crystals grown by solid-phase recrystallization (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2983-2989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate by high-resolution x-ray diffraction (HRXRD), temperature-dependent photoluminescence (PL) and reflectivity spectroscopies, and low-temperature selective-photoluminescence spectroscopy ZnSe single crystals grown by solid-phase recrystallization. HRXRD reveals the high structural perfection of the samples which exhibit rocking-curve linewidths in the 15–20 arcsec range. The low-temperature PL spectra are dominated by the so-called Ideep1 excitonic line, a neutral-acceptor bound-exciton line I1, the free-exciton emission FX, and the n=2 excited state of FX. We identify the main residual impurities to be Li acceptors. Donor–acceptor pair bands are very hardly detected at low temperature which indicates a low donor content. A major characteristics of these samples is the quasi-absence of any Cu-related deep emission which generally plagues the PL spectra of bulk ZnSe. Consequently, Ideep1 is ascribed to Zn-vacancy–donor complexes. Finally, from the temperature dependence of the PL emission and reflectivity, the band-gap energy of bulk ZnSe is found to linearly shrink with the temperature above 80 K at a rate of −4.3×10−4 eV K−1. The room-temperature gap is estimated to 2720±2 meV. Our results indicate that solid-phase recrystallization produces ZnSe samples with the highest structural quality and purity achievable at present time. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363155
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  • 5
    Electronic Resource
    Electronic Resource
    Time-resolved investigations of excitonic recombination in highly strained InAs/Al0.48In0.52As quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 618-620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the exciton dynamics in strained InAs/Al0.48In0.52As quantum wells with well thicknesses of 2, 4, and 5 monolayers by time-resolved photoluminescence spectroscopy. Temperature-dependent measurements of the decay time reveal a significant drop of the decay time above a critical temperature which depends on the well width. The simultaneous measurement of the decay time and the integrated photoluminescence intensity enables us to estimate the radiative time constant. As can be shown from the temperature dependence of the decay time nonradiative processes become more and more important at higher temperatures. The strong increase of the radiative lifetime at higher temperatures is attributed to a thermal ionization of the excitons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357058
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  • 6
    Electronic Resource
    Electronic Resource
    Structural characterization of lattice matched AlxIn1−xAs/InP and GayIn1−yAs/InP heterostructures by transmission electron microscopy and high-resolution x-ray diffraction (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2403-2410 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we report on transmission electron microscopy and high-resolution x-ray diffractometry studies of lattice matched AlxIn1−xAs/InP and GayIn1−yAs/InP epilayers grown by molecular beam epitaxy on InP(100) substrates. High-resolution and diffraction contrast electron microscopy measurements show the presence of different contrast zones in the epilayers. The analysis of high-resolution x-ray diffraction measurements and computer simulations ascribe these zones to the presence of a compositional gradient in the epilayers. A comparison among investigated samples grown under slightly different growth conditions combined with an analysis of the crystal defects is presented. Growth-induced small variations in the chemical composition of the epilayer can produce differences in the structural quality of the epitaxial layer. Finally, a few monolayers thick and highly strained film of InAsP, is observed in all investigated samples at the substrate/epilayer interface. The formation of this interface layer is explained by the exchange of As and P during exposure of the InP surface to As4 before the growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360162
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  • 7
    Electronic Resource
    Electronic Resource
    Structural and optical properties of Al0.48In0.52As layers grown on InP by molecular beam epitaxy: Influence of the substrate temperature and of a buffer layer (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7362-7369 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the crystalline and optical properties of AlyIn1−yAs ternary alloys grown by molecular beam epitaxy on InP substrates. We obtain Al0.48In0.52As layers with both high structural quality and excellent optical performance by growing (i) at high substrate temperature (600 °C), (ii) on a high-quality GaxIn1−xAs/AlyIn1−yAs short-period superlattice buffer, (iii) or on a high-quality GaxIn1−xAs buffer layer, as attested by double-crystal x-ray diffraction and photoluminescence measurements. In addition the experimental results indicate a significant reduction of the clustering level in these samples which is interpreted in terms of a smoothing of the growth front, a thermodynamically controlled growth mode, and the interplay between In segregation and In desorption. Our investigations further show that the improvement of the structural quality and of the optical performance are strongly correlated. Finally, we report the first evidence of excitonic features in photoluminescence excitation spectra of the AlyIn1−yAs ternary alloy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349730
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  • 8
    Electronic Resource
    Electronic Resource
    2.5 μm GaInAsSb lattice-matched to GaSb by liquid phase epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5936-5938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaSb lattice-matched Ga1−xInxAsySb1−y has been grown by liquid phase epitaxy on (100) and (111)B oriented substrates using initial melt supersaturation ΔT varying from 10 to 30 °C, at growth temperatures 〉600 °C. It is shown that the band-gap cutoff wavelength, measured at room temperature by the electroreflectance method, is ∼2.38 μm for (100) layers whatever ΔT, and increases from 2.38 μm up to 2.51 μm for (111)B oriented layers when ΔT is increased from 15 to 25 °C. Photoluminescence experiments at 2 K confirm the band-gap reduction occurring at high ΔT with the (111)B orientation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346925
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  • 9
    Electronic Resource
    Electronic Resource
    Structural properties and transport characteristics of pseudomorphic GaxIn1−xAs/AlyIn1−yAs modulation-doped heterostructures grown by molecular-beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1790-1797 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Non-lattice-matched GaxIn1−xAs/AlyIn1−yAs modulation-doped heterostructures grown on (100) InP by molecular-beam epitaxy suitable for application in field-effect transistors have been studied. A computer simulation of the x-ray diffraction pattern proves to be necessary to obtain precise information about the structural parameters of the samples. The high crystal quality of our samples is demonstrated by the excellent agreement between experimental and simulated x-ray-diffraction curves. The transport characteristics of Ga0.38In0.62As/AlyIn1−yAs heterostructures including the evolution of the mobility and of the two-dimensional electron-gas density with temperature and structural parameters are discussed in relation with the relevant scattering mechanisms. The use of a thin spacer layer makes it possible to obtain very high conductivities. Both x-ray and transport measurements show that the strained GaxIn1−xAs layers are pseudomorphic well above the critical thickness calculated with the mechanical equilibrium model. The highest mobilities (13 100 and 103 000 cm2 V−1 s−1 at 300 and 4 K, respectively), obtained with a sheet carrier density of 1.7×1012 cm−2, are measured on a Ga0.38In0.62As/Al0.51In0.49As heterostructure. They are among the best values reported so far for similar structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351215
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  • 10
    Electronic Resource
    Electronic Resource
    Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 242-244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the growth and characterization of p-i-n photodiodes based on ZnBeSe and ZnMgBeSe compounds. High-quality diodes exhibiting dark current as low as 12 nA/cm2 at −2 V bias have been fabricated. The spectral response shows a high responsivity of 0.17 A/W at 450 nm, with a rejection of ∼104 at longer wavelengths. Our results thus demonstrate the potential of ZnSe-based heterostructures for efficient detection in the visible-ultraviolet region. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125715
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