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  • 1
    Electronic Resource
    Electronic Resource
    Imaging pattern formation: Bridging the pressure gap (1995)
    Springer
    Applied physics 61 (1995), S. 569-574 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 82.65. Tv; 82.40.Ck
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Two surface-sensitive optical imaging methods, Ellipso-Microscopy for Surface Imaging (EMSI) and Reflection Anisotropy Microscopy (RAM) are introduced. They allow imaging of pattern formation on surfaces, e.g., due to submonolayer coverages of adsorbates, at any arbitrary pressure. In spatio-temporal pattern formation during heterogeneously catalysed reactions this bridges the ‘pressure gap’ between well-defined UHV experiments and ‘real catalysis’. For the CO oxidation on Pt(110), the parameter space for pattern formation was extended up to 100 mbar, i.e., by 5 orders of magnitude compared to earlier investigations by Photo-Emission Electron Microscopy (PEEM) which had to be conducted below 10-3 mbar. With increasing pressure, the synchronisation mechanisms responsible for the observed pattern showed a gradual shift from reaction-diffusion to thermal-kinetic coupling unveiling previously unseen features of pattern formation in catalysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01542865
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  • 2
    Electronic Resource
    Electronic Resource
    Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 219-221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of growth temperature on the interfacial abruptness of strained Ge layers, a few monolayers thick, embedded in Si has been studied using Raman spectroscopy to identify the presence of GeGe and GeSi bonds and medium energy ion scattering to characterize the spatial extent of the layers. Atomically sharp interfaces are observed for growth temperatures just above the crystalline to amorphous transition range, with pseudomorphic growth found for growth temperatures 〉∼250 °C. Asymmetric mixing of Ge into the Si capping layer occurs during growth at higher temperatures. Significantly less intermixing occurs on annealing after growth, pointing to the role of dynamical processes occurring at the growth front.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101014
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  • 3
    Electronic Resource
    Electronic Resource
    The influence of the surface migration of gold on the growth of silicon nanowires (2006)
    [s.l.] : Nature Publishing Group
    Nature 440 (2006), S. 69-71 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Interest in nanowires continues to grow, fuelled in part by applications in nanotechnology. The ability to engineer nanowire properties makes them especially promising in nanoelectronics. Most silicon nanowires are grown using the vapour–liquid–solid (VLS) mechanism, in which the nanowire grows ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature04574
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  • 4
    Electronic Resource
    Electronic Resource
    Growth dynamics of pentacene thin films (2001)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 412 (2001), S. 517-520 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The recent demonstration of single-crystal organic optoelectronic devices has received widespread attention. But practical applications of such devices require the use of inexpensive organic films deposited on a wide variety of substrates. Unfortunately, the physical properties of these organic ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35087532
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  • 5
    Electronic Resource
    Electronic Resource
    Relaxation and H coverage of ammonium fluoride treated Si(111) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2344-2346 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using medium energy ion scattering and elastic recoil detection, we have studied silicon surfaces prepared by ex situ NH4F wet etching. We report direct measurements of relaxation and hydrogen coverage of the passivated Si(111)-(1×1) surface. For Si(111), nearly ideal, unreconstructed surfaces are obtained, terminated by a single atomic layer of hydrogen. Silicon backscatter yields agree closely with simulations of a bulk truncation, with an inward relaxation of the outermost layer of 0.075±0.03 A(ring). On the other hand, Si(001) prepared by NH4F solution shows severe roughening. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112740
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  • 6
    Electronic Resource
    Electronic Resource
    Growth modes of Ge on GaAs(001) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1680-1682 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used low-energy electron microscopy to investigate the growth of Ge on GaAs(001)-c(2×8). Depending on the growth temperature we find a wide variety of growth modes: At 420 °C growth proceeds layer by layer, with nucleation of two-dimensional (2D) islands smaller than 150 A(ring) across. An increase of growth temperature to 450–480 °C enhances surface diffusion and results in formation of large anisotropic 2D islands on wide terraces along with denuded zones—and step flow—along the step edges. Further temperature increase transforms the growth mode to step flow. At 540 °C the growth mode becomes unstable, resulting in a roughening of the Ge surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112884
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  • 7
    Electronic Resource
    Electronic Resource
    Hot electron emission lithography (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2835-2837 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed an electron lithography method, hot electron emission lithography, which is capable of printing integrated circuits with an exposure time of only a few seconds. The basic design and fabrication of the patterned electron emitting mask made by standard metal–oxide–semiconductor technology will be discussed, and its applicability in a simple 1:1 e-beam stepper will be demonstrated. Patterns with a minimum feature size of 160 nm have been printed successfully. Further improvements in resolution to 50 nm appear to be possible. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122606
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  • 8
    Electronic Resource
    Electronic Resource
    Elastic recoil detection for medium-energy ion scattering (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3147-3152 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Medium-energy ion scattering (MEIS) has been successfully applied for many years as a technique for structural analysis of solids. Advantages over competing techniques include superb depth resolution (5–10 A(ring)), quantitative information (well-known cross sections), and ease of interpretation. A weakness of the technique is the lack of sensitivity to light elements. We have adapted the technique to detect light elements by elastic recoil detection analysis (ERDA). This has been used to analyze samples containing hydrogen and boron, with depth resolution of ≈10 A(ring), comparable to conventional MEIS. This is an order of magnitude improvement over conventional ERDA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144322
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  • 9
    Electronic Resource
    Electronic Resource
    A new two-dimensional particle detector for a toroidal electrostatic analyzer (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2679-2683 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a new two-dimensional detector for the detection of ions scattered from a solid target, analyzed in energy and scattering angle by a toroidal electrostatic analyzer. The detector resolves the scattering angle with a resolution of 0.4° over a range of 25°, and the ion energy with a resolution of 120 eV over a range of 2000 eV, at 100 keV ion energy. The energy resolution of the spectrometer was improved with a factor 4 relative to its previous performance with a one-dimensional scattering angle detector, while−at the same time−the dose efficiency (count/μC) was improved by a factor 5–10.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142199
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  • 10
    Electronic Resource
    Electronic Resource
    Metallization induced band bending of SrTiO3(100) and Ba0.7Sr0.3TiO3 (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3227-3229 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the interaction of Pt with single-crystal SrTiO3(001) and polycrystalline Ba0.7Sr0.3TiO3 thin films using photoemission spectroscopies. Significant band bending is caused by interface formation, determining the Schottky barrier height. We have depth profiled the band bending for Ba0.7Sr0.3TiO3 thin films, giving a direct measurement of the depletion depth and built-in potential. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119148
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