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  • 1
    Electronic Resource
    Electronic Resource
    Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 664-670 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositional disordering of InGaAs/GaAs superlattices using a low-temperature-grown GaAs cap layer (LT-GaAs) by molecular beam epitaxy has been studied. The disordering of the superlattice was verified by photoluminescence and double-crystal x-ray rocking curve measurements. The Ga-vacancy-enhanced interdiffusion due to the presence of LT-GaAs was found to be the disordering mechanism. Diffusion equations and the Schrödinger's equation were solved numerically to obtain the composition profile and the transition energies in the disordered quantum well, respectively. The simulated energy shifts for samples under different annealing conditions agreed very well with the experimental results. The calculated effective diffusivity for the In–Ga interdiffusion has an activation energy of 1.63 eV, which is smaller than the activation energy 1.93 eV, for intrinsic interdiffusion. The diffusivity for the enhanced In–Ga interdiffusion due to the presence of LT-GaAs is about two orders of magnitude larger than the intrinsic In–Ga diffusivity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360810
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  • 2
    Electronic Resource
    Electronic Resource
    Investigation of indium doping in InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure lasers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4882-4885 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of indium doping in the graded-index regions of the InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure quantum well laser has been studied. It was found that the threshold current density can be greatly reduced by a proper amount of In doping in the graded AlGaAs region. This result is attributed to an improvement in material quality due to a reduction in group III vacancies. The effect of thermal treatment on laser performance has also been studied. Although high temperature annealing can significantly improve non-In-doped lasers, it has little effect on In-doped lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354319
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  • 3
    Electronic Resource
    Electronic Resource
    Role of cladding layer thicknesses on strained-layer InGaAs/GaAs single and multiple quantum well lasers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8027-8034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influences of cladding layer thicknesses on the performance of strained-layer InGaAs/GaAs graded-index separated confinement heterostructure quantum well lasers have been studied. The waveguiding property of the laser structure was analyzed using the transfer matrix method. In this work, experimental results and the calculated results showed that threshold current densities and external quantum efficiencies both were crucially dependent on the thicknesses of cladding layer for both single and multiple quantum well lasers. The minimum cladding layer thicknesses needed to maintain low threshold current densities and low internal total loss for both single and multiple quantum well devices were determined experimentally and theoretically.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353917
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  • 4
    Electronic Resource
    Electronic Resource
    Fundamental mode operation of high-power InGaAs/GaAs/AlGaAs laser arrays (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4706-4708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new ridge waveguide laser array with stable fundamental mode operation has been fabricated. By introducing absorption regions in all the laser stripes except for the central one, the electric field distribution of the laser arrays and the modal gains of the array supermodes are changed, resulting in fundamental mode operation. The threshold current of an array with five elements is typically 40 mA and the maximum output power is higher than 150 mW. The single-lobed far-field pattern centered at 0° with full width at half maximum of 2° is obtained at 1.5 times of the threshold current (Ith).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352741
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  • 5
    Electronic Resource
    Electronic Resource
    Experimental study of the plasma resonance in a planar surface wave plasma (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 3195-3198 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, the plasma resonance in a surface wave sustained plasma was investigated. Surface wave discharges have been successfully generated by a microwave planar vane-type slow wave structure. Experimental results clearly demonstrated that the amplitude of the electric field of the microwave always became a local maximum in the position where the plasma density was equal to the same value. When the operating gas pressure and the input microwave power were varied to change the plasma density profile, the location of the maximum of the electric field was found to shift in compliance with the plasma density profile. Meanwhile, the peak of the resonance response was found to be proportional to the plasma density gradient while the spatial width of plasma resonance was inversely proportional to the plasma density gradient. These results were qualitatively in accordance with the theory. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379342
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  • 6
    Electronic Resource
    Electronic Resource
    Optical and structural properties of epitaxially lifted-off GaAs films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 466-468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the layer thickness on the optical and structural properties of the epitaxially lifted-off (ELO) thin films has been studied. The ELO films bonded to Si, InP, and GaAs substrates have also been compared. The structure was characterized by high-resolution double-crystal x-ray diffraction and the optical properties were measured by the temperature-dependent photoluminescence spectroscopy. A biaxial compressive strain was observed for the samples bonded to Si with a buffer layer thinner than 1000 nm. Due to different thermal expansion coefficient between the grafted thin film and the host substrate, the emission spectra of the quantum wells of the lifted-off thin films are redshifted compared to the as-grown sample. The amount of the redshift is larger for thinner films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366662
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  • 7
    Electronic Resource
    Electronic Resource
    Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 366-371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the thermal reaction of Pd/In0.52Al0.48As contacts using capacitance–voltage (C–V), current–voltage, Auger electron spectroscopy, and x-ray diffraction analyses and compared the results to those for Pd/Al0.25Ga0.75As and Pd/In0.53Ga0.47As contacts. The thickness of InAlAs consumed by the reaction during annealing was calculated directly from the measured C–V profiles. Pd starts to react with InAlAs at a temperature of 100 °C, lower than it does with AlGaAs. For thermally annealed Pd/InAlAs and Pd/AlGaAs, both compositional and structural changes were found at the Pd/semiconductor interface. However, in heat-treated Pd/InGaAs samples, compositional changes but no structural changes were observed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366692
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  • 8
    Electronic Resource
    Electronic Resource
    Enhancement of electron-wave reflection by superlattices with multiple stacks of multiquantum barriers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1108-1110 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a superlattice (SL) with multiple stacks of multiquantum barriers (MQB), which can reflect electrons more effectively than with a single stack of MQB. The reflectivities are calculated and compared with one another for a variety of potential barrier structures. The multistack SL has a wider energy spectrum within which electrons are reflected. Four types of n-GaAs/i-barrier/n-GaAs diodes were fabricated to confirm the calculated results. The current-voltage characteristics measured at 77 K for these diodes show that the turn-on voltage increases with the number of stacks of MQBs in the SL. This is in agreement with our calculated results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110843
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of X-valley superlattice on electron blocking by multiquantum barriers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2720-2722 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Four n-i-n GaAs/AlGaAs diodes have been used to demonstrate that at room temperature the carrier blocking is influenced by the X-valley superlattice in a multiquantum barrier. The diode with a Γ-X crossover multiquantum barrier has a current at least three orders lower than the corresponding diode with only a bulk barrier. However, diodes without Γ-X crossover barriers have resistance as low as 10 Ω in spite of whether a multiquantum barrier exists or not. This indicates that the X-valley superlattice plays an important role in blocking the current flowing across/through a multiquantum barrier. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112546
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  • 10
    Electronic Resource
    Electronic Resource
    Direct observation of Si delta-doped GaAs by transmission electron microscopy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2628-2630 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct observation of the Si delta-doped layer in GaAs has been achieved by high resolution transmission electron microscopy. Samples with different Si doses, from half a monolayer to two monolayers, were studied. The observed spreading of the delta-doped layer showed that Si atoms are largely confined in five monolayers at most (in the highest dose case), indicating excellent confinements of dopants in GaAs. From the images, the Si atoms were uniformly distributed in the doped layer, no cluster formation was observed. For delta-doped GaAs grown at low temperature (480 °C), stacking faults originated from the doped layers were observed. These faults were thought to be caused by the large unrelaxed strain in the low-temperature grown GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106902
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