Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
52 (1988), S. 1505-1507
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the far-infrared absorption spectra of very shallow acceptor centers in silicon consisting of boron (aluminum) introduced during growth complexed with defect centers produced during neutron transmutation doping followed by a partial high-temperature anneal. As annealing of the samples removes radiation damage and activates isolated boron (aluminum) centers, a new acceptor series, attributed to this acceptor complex, is observed with a ground-state binding energy significantly lower than that of the known impurity.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99113
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