American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 2698-2700
AIP Digital Archive
Low-temperature photoluminescence excitation spectra of disordered Ga0.5In0.5P/Al0.3Ga0.2In0.5P quantum wells lattice matched to (311)B GaAs substrates have been measured for the first time. Transition energies calculated with a k¯⋅p¯ approach agree with experiment within 3 MeV, over the entire range of quantum well thicknesses (Lz=11–109 A(ring)). A conduction-band discontinuity of 0.65±0.05 is derived.
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