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  • 1
    Electronic Resource
    Electronic Resource
    The effect of crystallography on the Hg 5d branching ratios (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 2819-2826 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Hg 5d5/2 and 5d3/2 cross sections and branching ratios were measured in the photon energy range between 26 and 105 eV for Hg overlayers on Ag (100) and Cu (100). The branching ratios deviate from the nonrelativistic statistical value of 1.5, reaching values of 8.0. Data are presented that establish a direct relationship between the branching ratio and the long-range crystallographic structure of the Hg overlayers. This relationship is a consequence of the formation of a band structure from the shallow mercury 5d eigenstates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458867
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  • 2
    Electronic Resource
    Electronic Resource
    Anomalous behavior of Sb implanted Si after mega-electron-volt carbon irradiation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2618-2620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the dopant behavior of 1.5 MeV implanted Sb in Si(100) both prior to and following irradiation with 8 MeV C+ ions. The irradiation stimulates the regrowth in silicon lattice and induces a high Sb substitution of 93% after a thermal anneal of 400 °C. At higher temperatures, a significant Sb diffusion towards the amorphous/crystalline interface is detected in the ion-irradiated sample. It is suggested that the vacancy supersaturation produced during ion irradiation is dominantly responsible for the significant modification of dopant substitution, redistribution, and diffusion. Point defects created during precipitation also seem to influence the dopant diffusion. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389485
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  • 3
    Electronic Resource
    Electronic Resource
    The correlation between strain and electronic structure in monolayer thick films (1988)
    Springer
    The European physical journal 73 (1988), S. 247-255 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We explote and empirical relationship between strain (and lattice constant) and the valence electronic structure for mercury, bromine and iron overlayers. These overlayers have a range of lattice constants. For the Hg overlayers, all share a common cubic crystallography. We generally observe that the smaller the overlayer lattice constant, the greater the energy separation betweend-bands (Hg and Fe) orp-bands (Br). These results have important implications in relating electronic structure to fundamental properties such as magnetism. In addition, the film thickness limits for pseudomorphic growth calculated from the bulk properties are consistent with the experimental studies of Hg pseudomorphic growth on Ag (100) at 90 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01305743
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    Paper (German National Licenses)
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