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  • 1
    Electronic Resource
    Electronic Resource
    Lattice Strain Analysis of VPE-Grown ZnS Epitaxial Layers on (001) GaAs by RBS - Channeling and High Resolution XRD Measurements (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 203 (Feb. 1996), p. 237-242 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.203.237.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Dual Ion Beam Deposition and Characterizatio of TiO〈sub〉x〈/sub〉 Thin Films (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 203 (Feb. 1996), p. 161-166 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.203.161.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Triple Ion Beam Sputtering Deposition of β-FeSi〈sub〉2〈/sub〉 (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 203 (Feb. 1996), p. 173-180 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.203.173.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Deposition of Doped and Undoped ZnO Thin Films fo Gas Sensors (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 203 (Feb. 1996), p. 137-142 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.203.137.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Mo/GaAs Schottky barriers prepared by d.c. sputtering (1989)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 11 (1989), S. 355-365 
    Details
    ISSN: 0392-6737
    Keywords: Surface double layers ; Schottky barriers ; work functions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto In questo lavoro vengono presentati risultati concernenti barriere Schottky Mo/GaAs preparate mediante «sputtering» in continua, per diversi valori delle tensioni di «sputtering». Le misure di caratteristiche corrente-tensione e capacità-tensione mostrano che è possibile ottenere barriere con buone caratteristiche elettriche (fattore di idealità prossimo ad uno, corrente di saturazione inversa molto bassa), purché siano scelte le giuste condizioni di deposizione. È stato anche condotto uno studio dettagliato delle ricavare informazioni sul meccanismo di trasporto dei portatori di carica. I risultati sperimentali mostrano che il comportamento di questo tipo di barriere è perfettamente spiegabile nell'ambito del modello unificato dei difetti nelle barriere Schottky nel GaAs.
    Abstract: Резюме Барьеры Шоттки Mo/GaAs приготовлены с помощью распыления при различных значениях напряЗения распыления. Измерения зависимостей тока от напряЗения и емкости от напряЗения показывают, что зти барьеры могут иметь очень хорощие свойства, если выбираются соответствующие условия приготовления. Подробное исследование вольт-амперных характеристик в зависимости от температуры позволяет проанализировать механизмы переноса заряда и связать их с усломиями приготовления. Зкспериментальые результаты показывают, что поведение барьеров Шоттки Mo/GaAs, приготовленных с помощьюDC распыления, моЗно успешно объяснить на основе единой модели дефектов, предлоЗенной для барьеров Шоттки GaAs.
    Notes: Summary Mo/GaAs Schottky barriers have been prepared by d.c. sputtering, for different values of the sputtering voltage. Current-voltage and capacitance-voltage measurements show that these barriers can have very good properties (near one ideality factor, very low inverse saturation current) if suitable preparation conditions are chosen. A detailed study of the current-voltage characteristics as a function of the temperature allows us to analyse the carrier transport mechanisms and to correlate them to the preparation conditions. The experimental results show that the behaviour of the Mo/GaAs Schottky barriers, prepared by d.c. sputtering, can be successfully explained on the basis of the unified defect model proposed for the GaAs schottky barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02450986
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  • 6
    Electronic Resource
    Electronic Resource
    Growth of epitaxial CdS films on CdTe substrates by chemical vapour deposition (1988)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 10 (1988), S. 57-69 
    Details
    ISSN: 0392-6737
    Keywords: Thin-film growth ; structure and epitaxy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Films di solfuro di cadmio sono stati cresciuti su substrati di tellururo di cadmio, mediante la tecnica della deposizione chimica da fase vapore in tubo aperto. La crescita è stata realizzata in un reattore di tipo orizzontale, usando come sorgente grani policristallini di CdS e idrogeno come agente trasportatore. Le temperature della zona sorgente e della zona substrato sono state variate nell'intervallo (700÷900)°C e (400÷800)°C, rispettivamente. I valori sperimentali della velocità di crescita sono stati paragonati a quelli calcolati assumendo un modello di crescita in condizioni di quasi equilibrio. Il confronto mostra che il processo di crescita può essere adeguatamente descritto da tale modello in un piccolo intervallo di temperatura attorno a 700°C. A temperature inferiori o superiori le cinetiche superficiali limitano la crescita. I films cresciuti a 700°C mostrano inoltre la migliore morfologia. Misure di diffrazione X e di fotoluminescenza evidenziano inoltre che i films cresciuti in queste condizioni hanno una buona qualità strutturale.
    Abstract: Резюме Метод химического напыления в открытой тпубке испольэуется для выращивания эпитаксиальных CdS пленок на CdTe подложках. Выращивание проиэводится в гориэонтальном реакторе, испольэуя поликристаллический CdS в качестве материала источника и водород, как транспортный гаэ. Температуры эоны источника и эоны подложки иэменяются соответсвенно в интервалаш (700÷900)°C и (400÷800)°C. Экспериментальные значения напыления сравниваются с вычисленными значениями, предполагая квази-равновесныю модель. Сравнение показывает, что выращивания мжет быть адекватно описан с помощью такой модели в небодьшой области температур вблиэи 700°C. При меньших и больших температурах поверхностная кинетика ограничивает процесс роста. Пленки, выращенные при 700°C, также овнаруживает наилучшую морфологию. Иэмерения рентгеновской дифракции и фотолюминиесценции подтверждают, что пленки, выращенные в этих условиях, имеУт высокое качество структуры.
    Notes: Summary The open-tube chemical vapour deposition has been used to grow epitaxial CdS films on CdTe substrates. The growth has been performed in a horizontal reactor, using polycristalline CdS as source material and hydrogen as transporting gas. The deposition and the source temperatures have been varied in the range (400÷800)°C and (700÷900)°C, respectively. The experimental values of the deposition rate have been compared with those calculated assuming a quasi-equilibrium model. The comparison shows that the growth process can be adequately described by such a model in a small-temperature region around 700°C. At lower or higher temperatures the surface kinetics becomes the limiting mechanism. Films grown at 700°C show also the best morphology. X-ray diffraction and photoluminescence measurements evidence that films grown in these conditions have a good structural quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02450089
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  • 7
    Electronic Resource
    Electronic Resource
    Deep-level spectroscopy by analysis of isothermal capacitance transients (1990)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 12 (1990), S. 1443-1451 
    Details
    ISSN: 0392-6737
    Keywords: Impurity and defect levels
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary Deep-level spectrometry of semiconductor has been carried out by measuring isothermal capacitance transients. From the recorded transients, DLTS signals have been reconstructed by software to give Arrhenius plots. Transients have been acquired in two time ranges to increase the emissivity interval on which to observe the trap decay. The method has been tested on Mo/GaAs Schottky barriers and a comparison has been carried out with results obtained on the same diodes using a commercial DLTS system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02452111
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  • 8
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of GaS x Se1−x Solid solutions (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1775-1781 
    Details
    ISSN: 0392-6737
    Keywords: Methods of crystal growth and purification
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Cristalli di GaS x Se1−x sono stati cresciuti dalla fase vapore, mediante trasporto chimico, usando I2 come agente trasportatore. Per l'intera serie di soluzioni solide, sono state eseguite misure di resistività, mobilità Hall e concentrazione dei portatori di carica a temperatura ambiente. Il comportamento di queste grandezze in funzione del parametrox è stato correlato alla dipendenza dallo stesso parametro delle costanti reticolari e della banda proibita di energia. L'analisi dei dati riportati mostra che le proprietà elettriche dipendono sia dalle caratteristiche strutturali dei cristalli, sia dalla incorporazione d'impurezze di iodio durante la crescita.
    Abstract: Резюме Выращиваются твердые растворы GaS x Se1−x из пара, используя метод переноса иода, причем содержане серыx изменяется скачками 0.1. Для полученных твердых растворов измеряются сопротивление, подвижности Холла и концентрации носителей, используя метод Ван дер Пау. Поведение этих величин в зависимости отx связано с зависимостью параметров решетки и ширины запрещенной зоны от химического состава, как было определено различными методами. Анализ полученных данных указывает, что электрические свойства твердых растворов GaS x Se1−x , выращенных из пара с иодом, определяются структурными характеристиками кристаллов, а также включением I2 во время выращивания.
    Notes: Summary GaS x Se1−x solid solutions are grown from the vapour by means of the I2-assisted transport method, varying the sulphur percentagex in steps of 0.1. Resistivity, Hall mobilities and carrier concentrations are measured at room temperature in the complete series of solid solutions by using the Van der Pauw method. Their behaviour as a function ofx is correlated to the dependence of the lattice parameters and of the energy gap on the chemical composition, as determined by various techniques. The analysis of the data reported here indicates that the electrical properties of GaS x Se1−x solid solutions grown from the vapour with iodine are determined both by the structural characteristics of the crystals and by the I2 incorporation during the growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457865
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  • 9
    Electronic Resource
    Electronic Resource
    Electron-phonon scattering in transport properties of InSe single crystals (1985)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 6 (1985), S. 383-392 
    Details
    ISSN: 0392-6737
    Keywords: Theory of electronic transport ; scattering mechanisms
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto In questo lavoro è riportato uno studio dell'interazione elettrone-fonone in monocristalli di seleniuro di indio, condotto mediante misure di effetto Hall e spettroscopia Raman. I dati sperimentali sono stati interpretati secondo il modello di Fivaz e Schmid, per lo scattering da fononi ottici omopolari. L'approssimazione migliore delle curve sperimentali è ottenuta assumendo un carattere bidimensionale per l'interazione tra gli elettroni ed i fononi, nel modoA 1, con energia 14.5 meV. Il carattere bidimensionale delle proprietà di trasporto è probabilmente dovuto alla presenza di difetti planari che localizzano i portatori di carica all'interno degli strati.
    Abstract: Резюме Исследуется электрон-фононное рассеяние в монокристаллах InSe, используя измерения подвижности Холла и спектроскопии комбинационного рассеяния. Экспериментальые данные интерпретируются в соответствии с моделью Фиваца и Шмидта для гомополярного оптического рассеяния. Наилучшая подгонка экспериментальных результав получается в предположении двумерного характера взаимодействия между электронами и фононами, модыA 1 , с энергией 14.5 мэВ. Двумерный характер, по-видимому, обусуовлен наличием большого числа плоских дефектов, которые сильно локализуют носители внутри слоев, что подтверждается наблюдениями электронной микроскопии.
    Notes: Summary The electron-phonon scattering in indium selenide single crystals has been investigated by Hall-mobility and Raman-spectroscopy measurements. The experimental data have been interpreted according to the Fivaz and Schmid model for homopolar optical scattering. The best fit of the experimental results is obtained by assuming the bidimensional behaviour of the interaction involving anA 1 phonon with energy 14.5 meV. The bidimensional character is probably due to the presence of a large number of planar defects, confirmed by electron microscope observations, which strongly localize the carriers within the layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02451897
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  • 10
    Electronic Resource
    Electronic Resource
    Study of the photomagnetoelectric and photoconductivity effects with numerical methods, for any injection level, in gallium selenide
    Amsterdam : Elsevier
    Physica B+C 105 (1981), S. 54-58 
    Details
    ISSN: 0378-4363
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0378-4363(81)90214-X
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