ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
4H-SiC PiN rectifiers with implanted anode and single-zone JTE were fabricated usingAlN capped anneal. The surface damage during the high temperature activation anneal issignificantly reduced by using AlN capped anneal. The forward drop of the PiN rectifiers at100A/cm2 is 3.0V while the leakage current is less than 10-7A/cm2 up to 90% breakdown voltage atroom temperature. With 6μm thick and 2×1016cm-3 doped drift layer, the PiN rectifiers can achievenear ideal breakdown voltage up to 1050V. Hole impact ionization rate was extracted andcompared with previously reported results
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1367.pdf
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