ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Transformation of radiation-induced defects in p +-n-n + structures fabricated from highresistivity n-type silicon subjected to cyclic irradiation and annealing is investigated. The kinetic behavior of the increase in the concentration of the Ci-Oi defects is analyzed as a function of the detector fabrication process. During the second irradiation cycle a transformation of the defects, which were formed as a result of annealing of the original radiation defects, is observed. The appearance of “hidden” sources of deep center formation is revealed. It is established that the presence of a higher oxygen concentration, which arises in the samples as a result of the extended silicon oxidation process, results in a more active complex-formation of carbon-containing defects in comparison with samples with reduced oxygen content.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187105
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