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  • 1
    Electronic Resource
    Electronic Resource
    A novel technique for measuring resistance fluctuations independently of background noise (1989)
    Springer
    Applied physics 48 (1989), S. 233-236 
    Details
    ISSN: 1432-0630
    Keywords: 06 ; 07 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A novel method is presented for measuring the spectral density of resistance fluctuations without the explicit determination of the voltage background noise (Johnson noise, pre-amplifier noise). The output of a standard ac bridge excited by a single-frequency alternating current is demodulated by two phase-sensitive detectors which operate in quadrature. When the phase difference between excitation and detection is properly set, the real part of the cross-spectral density of the two demodulators shows only the spectral density of the resistance fluctuations and not the disturbing background noise. The feasibility of our new method is demonstrated by measurements of 1/f noise of a thin-film A1 sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619390
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Micron-sized Hall probes on a Si/SiGe heterostructure as a tool to study vortex dynamics in high-temperature superconducting crystals (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1767-1770 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe the fabrication of micron-sized Hall probes from a Si/SiGe heterostructure. The magnetic field response of the Hall probes shows a very high sensitivity of ∼60 Ω/kG. Below a temperature of 80 K, the Hall probes exhibit a highly linear field dependence of the Hall resistance. The onset of the quantum Hall effect at very low temperatures and high magnetic fields causes only small deviations from the linear field response. We demonstrate the performance of the device as a sensitive local magnetization probe in high-temperature superconducting crystals of Bi2Sr2CaCu2O8. With a linear array of Hall probes we track both the spatial and temporal evolution of the magnetization profile across the crystal. In this way surface and bulk contributions to the overall magnetization can be delineated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149666
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  • 3
    Electronic Resource
    Electronic Resource
    A novel bulge-testing setup for rectangular free-standing thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 4026-4031 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A newly designed bulge-testing apparatus for the mechanical testing of the tensile properties of free-standing thin films has been constructed and tested. With this instrument it is possible to measure the elastic modulus, tensile and compressive growth stress, and plain strain yield strength in thin films. The setup features a high strain resolution (4E-10), and a high stress resolution, e.g., 〉0.2 MPa for bulge heights larger than 10 μm. In our setup, thin films are stressed by a differential gas pressure across the film, while the deflection is measured by a scanning laser beam. The scanning laser beam measures the curvature of the bulge rather than the bulge height. This makes the setup insensitive to a possible initial nonflatness of the film. This also provides the possibility to measure the growth stress of films that were deposited under a compressive stress. We show the results of measurements of the plane strain modulus on thin tungsten films and on both flat and nonflat aluminum (alloy) film samples. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150029
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  • 4
    Electronic Resource
    Electronic Resource
    Deformation mechanism in the forcefill process (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 889-892 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Forcefill is a method used in metallization of ICs to fill via holes with metal. At elevated temperature and under applied pressure the metal flows into the via hole. The method is applicable to aluminum as well as to copper. In this article the mechanism of the process is discussed based on measurements of the kinetics and on finite element calculations of the shear and hydrostatic stress in the film covering the via hole. It is demonstrated that naïve use of deformation maps constructed by Frost and Ashby for the description of the forcefill process easily leads to highly inconsistent results. The calculated stress distribution shows that the relevant shear stress is more than one order of magnitude lower that the applied pressure. Since no deformation map was available for the grain size appropriate for the forcefill experiment a map for 1 μm grains was constructed. This map indicates that for the forcefill process diffusional flow is the dominant deformation mechanism. It is shown that under these conditions the diffusional flow process described by Frost and Ashby is in essence identical to our previously reported stress-induced diffusion model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371957
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  • 5
    Electronic Resource
    Electronic Resource
    Young's modulus measurements and grain boundary sliding in free-standing thin metal films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2673-2675 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Young's modulus of free-standing polycrystalline Al, Au, and W films with submicron thickness has been studied using a dynamic bulge-testing technique. For Au and Al films a clear frequency dependence of the modulus is observed at room temperature in the range 1×10−4–0.5 rad/s. The values of the moduli are considerably smaller than the corresponding values of bulk material. The modulus of W films measured under the same conditions does not depend on frequency and is equal to the bulk value. The origin of the behavior found in the Al and Au films is anelastic grain boundary sliding. As a consequence of the relatively small grain size of thin polycrystalline films this phenomenon is observable at room temperature in films with a relatively low melting point. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367896
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  • 6
    Electronic Resource
    Electronic Resource
    Critical current-length product for electromigration induced resistance changes in short Al lines (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1226-1228 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Changes in the electrical resistance induced by electromigration in short (3–100 μm) pure Al lines show a rather well-defined behavior. An applied dc current induces either an increase or a decrease of the resistance. For current densities below a critical value the resistance change saturates with time and the resistance fully recovers when the current is switched off. The length and temperature dependence of the resistance changes indicate that the observed time dependence is determined by grain boundary diffusion along the whole line length. Above the critical current density the resistance changes do not fully recover. Given the inevitable sample-to-sample variations, the product of the critical current density and the line length is constant. The value of this product is in good agreement with values of the constant product of threshold current density and line length found in drift velocity experiments. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115015
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