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  • 1
    Electronic Resource
    Electronic Resource
    InAlAs/InP heterostructures: Influence of a thin InAs layer at the interface (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2324-2329 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAlAs lattice matched on InP heterostructures with a thin InAs layer of variable thickness intentionally added at the interface has been grown by molecular-beam epitaxy and characterized by photoluminescence. Radiative transitions, the position of which is correlated with the InAs thickness, are systematically observed, even in samples without any added InAs layer. This shows that, even in the latter case, type-I transitions are observed at the interface. Following this result, it is proposed that a transition around 1.2 eV, previously assigned to type-II transitions, results in fact from type-I recombinations in a quantum well at the interface. The spatially indirect type-II transitions would occur at ≈1.3 eV, and could be observed up to now only for reverse interfaces (InP grown on InAlAs).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357604
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  • 2
    Electronic Resource
    Electronic Resource
    Deep-level transient spectroscopy characterization of silicon-silicon interfaces (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7640-7644 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the capacitance-voltage technique and mainly deep-level transient spectroscopy (DLTS), we studied silicon-silicon epitaxial layer structures grown by the limited reaction process using silane diluted in hydrogen. We develop a simple but original model to interpret the DLTS data. The use of the two techniques allows the determination of the physical parameters of the structure, i.e., the doping level, the thickness of the layers, and the density and capture cross section of the states localized at the different interfaces of the structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347534
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  • 3
    Electronic Resource
    Electronic Resource
    An Auger and electron energy-loss study of reactions at the Ti-SiO2 interface (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8168-8176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, we use Auger electron spectroscopy and electron energy-loss spectroscopy in order to investigate the room-temperature formation of the Ti/SiO2 interface and its reactivity upon annealing. We perform anneals in the temperature range 200–900 °C for which the phenomena involved are discussed with respect to the Si oxide and Ti film thicknesses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347472
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  • 4
    Electronic Resource
    Electronic Resource
    Relationship between surface reconstruction and morphology of strained Ga1−xInxP layers grown on GaP (001) by gas-source molecular-beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2961-2963 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the growth of strained Ga1−xInxP layers on GaP (001) by gas-source molecular-beam epitaxy for x varying from 0.25 to 1. At a growth temperature of 520 °C, we find two main differences with respect to the well known GaInAs/GaAs system. First, for 0.25≤x≤0.5, we observe the development of wire-like structures oriented along the [110] direction and on the other hand, the growth of InP on GaP leads to the formation of huge dots in small density. The influence of the growth parameters such as the growth temperature or the phosphine flow rate is presented. The whole set of results is discussed in light of recent work on the phosphide surface reconstructions with a particular emphasis on the role of the cation-rich one. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371242
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  • 5
    Electronic Resource
    Electronic Resource
    Interplay between segregation, roughness, and local strains in the growth of Ga0.75In0.25P alloy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 253-255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, using reflexion high energy electron diffraction and atomic force microscopy, we compare the growth of strained Ga0.75In0.25P alloys on GaAs(001) and GaP (001) substrates. We show that although the absolute strain value is similar in both cases, the transition from a bidimensional to a three-dimensional growth mode occurs much faster in the tensile case than in the compressive one. We interpret this result with a microscopic theoretical model which takes into account the interplay between a weak surface roughness, In vertical and lateral segregation, and strain effects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126941
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  • 6
    Electronic Resource
    Electronic Resource
    Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1−xInxP layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2080-2082 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we compare the growth and relaxation behavior of tensile Ga0.7In0.3P/GaAs and Ga0.2In0.8P/InP layers using reflection high-energy electron diffraction, double-crystal x-ray diffraction, and atomic-force microscopy. Although the lattice mismatch is similar in both cases, we show that the relaxation process and the related critical thickness are very different and, hence, drastically dependent on the alloy composition. We interpret this result considering the predicted composition range for which alloy decomposition should occur. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126261
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  • 7
    Electronic Resource
    Electronic Resource
    Interface quality and electron transfer at the GaInP on GaAs heterojunction (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 765-769 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall measurements performed on Ga0.50In0.50P/In0.20Ga0.80As structures show abnormally low mobility both at room temperature and at 77 K, and too high electron densities which cannot be attributed to a normal two-dimensional electron gas in the channel. On the other hand, low temperature photoluminescence on asymmetrical AlGaAs/GaAs/GaInP quantum wells and x-ray photoemission spectroscopy measurements reveal the presence of arsenic atoms in the GaInP barrier. Using a one-dimensional Schrödinger–Poisson simulation with a nonabrupt interface model, we show that the presence of arsenic in GaInP leads to the formation of a parasitic GaInAsP well between the δ-doped layer and the channel, trapping the main part of transferred electrons. We experimentally show that the electron transfer can be drastically improved by inserting a thin AlInP layer at the interface. Insertion of at least six monolayers of AlInP is needed to recover a normal electron transfer as high as 2.1×1012 cm−2. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368135
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  • 8
    Electronic Resource
    Electronic Resource
    X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2127-2132 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied by angle resolved x-ray photoemission spectroscopy (XPS) the interface between Ga0.5In0.5P and GaAs grown by gas source molecular beam epitaxy. For cations, we show that the interface is abrupt for a growth temperature of 400 °C and that indium segregation is effective at 500 °C but less than that in GaInAs at the same temperature. For anions, growth of the two layers in rapid succession results in the incorporation of an excess of arsenic in the GaInP epilayers and a diffuse interface. As soon as these predominant experimental effects are suppressed, the abruptness of the interface is limited by a weak arsenic surface segregation. For this quasi-abrupt interface, we report a valence band offset of (approximate)0.3 eV as determined by XPS. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368357
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  • 9
    Electronic Resource
    Electronic Resource
    Kinetic model of element III segregation during molecular beam epitaxy of III-III'-V semiconductor compounds (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 52-54 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Segregation of column III atoms during molecular beam epitaxy of III-III'-V semiconductor compounds causes nonabrupt interfaces and a surface composition different from the bulk one. To derive concentration profiles, a thermodynamical equilibrium model has been used for a long time. This model applies well to describe segregation processes at high growth temperatures, but fails in predicting concentration profile variations with substrate temperature. We have thus developed a kinetic model which correctly takes into account the evolution with the growth temperature. We apply this model to the case of indium segregation in the GaxIn1−xAs/GaAs system. The calculated indium concentration profiles are compared to those obtained with the thermodynamical equilibrium model. A kinetic limitation of segregation is shown to appear at low substrate temperatures and sufficiently high growth rates. This limitation is predicted to arise below 400 °C for a growth rate of 1 monolayer/s for In segregation in the GaxIn1−xAs/GaAs system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114180
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  • 10
    Electronic Resource
    Electronic Resource
    Microscopic behavior of silicon in silicon delta-doped layer in GaAs (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2454-2456 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon δ-doped layers in GaAs have been studied using scanning tunneling microscopy and scanning tunneling spectroscopy on cleaved (110) surfaces. The samples were grown using molecular beam epitaxy with two growth temperatures: 480 and 580 °C. The concentration of the δ-doped layer was 0.03 monolayer. We show that, as in the case of bulk doping, the silicon has an amphoteric character: both SiGa and SiAs are observed at 480 °C and donors are formed before acceptors. At 580 °C, the spatial repartition of silicon evidences the segregation of silicon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121380
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