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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 111 (1989), S. 4918-4920 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 109 (1987), S. 7198-7199 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 109 (1987), S. 4023-4028 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1432-1106
    Keywords: Ventrolateral periaqueductal grey matter ; Nucleus raphe magnus ; Nucleus raphe obscurus ; Rostral ventrolateral medulla ; GABA ; Rat
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Experiments were carried out in urethane-anaesthetised rats to determine whether the inhibition of neurones in the rostral ventrolateral medulla (RVLM) induced by stimulation in the ventrolateral periaqueductal grey matter (PAG), is mediated via a relay in the medullary raphe nuclei. Electrical stimulation in the ventrolateral part of the PAG (20-ms trains, 7 pulses, 5–100 μA) inhibited ongoing activity of neurones in the RVLM for periods of 10–120 ms (mean 43.6 ms). The duration of the inhibition was reduced by 51.1% after microinjection of GABA (40–160 nmol in volumes of 200–400 nl, 9/12 sites), but not 165 mM NaCl (8/8 sites) in nucleus raphe magnus (NRM) and the rostral half of nucleus raphe obscurus (NRO). In a further series of experiments, activation of neuronal perikarya at 17 sites in NRM or NRO by microinjection of d,l-homocysteic acid (5–40 nmol in volumes of 50–400 nl) inhibited ongoing activity of 9 out of 14 neurones in the RVLM, the other 5 being excited. We suggest that the inhibitory effect on neurones in the RVLM, which can be evoked by stimulation in the ventrolateral PAG, is mediated indirectly by activation of an inhibitory projection to the RVLM from NRM and the rostral half of NRO.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4313-4318 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial reaction in Ni and amorphous Si (a-Si) multilayers (Ni/a-Si) has been studied. Transmission electron microscope observation was used to monitor the progress of the solid-state reaction. It was found that amorphous Ni-silicide phase [a-(Ni,Si)] is the first phase formed in the Ni and a-Si interfacial reaction. A relatively large composition range for the amorphous phase exists in these Ni/a-Si multilayers. In the as-deposited Ni/a-Si multilayers with shorter modulation period, the uniform a-(Ni,Si) phase forms at least in the composition range of 25–62 at. % Ni. These results are consistent with predictions from the calculated Gibbs free-energy diagram. The δ-Ni2Si phase is the preferred phase in the crystallization process of a-(Ni,Si) even for the equiatomic Ni/a-Si multilayers. The mechanism that controls phase selection in the Ni/a-Si interfacial reaction is discussed using nucleation theory. A nucleation control model for phase selection is proposed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 149-152 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction, photoemission, and Auger electron spectroscopy studies are reported of the interactions between the interface of titanium and C60 solid film during low-temperature annealing. The structure of C60 at the Ti/C60 interface is disrupted by the Ti atoms when Ti is deposited onto the surface of C60 film. Titanium atoms react with carbon atoms to form amorphous Ti carbide during low-temperature annealing. This interaction is related to the solid state amorphization reaction of the deposited Ti layer with C60 film, which occurs with a driving force of a negative heat of formation in the Ti–C system and a dominant diffusion of carbon into the Ti overlayer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7217-7221 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion-induced solid-state amorphization reaction (SSAR) in polycrystalline Ni/amorphous Si multilayers has been studied using an in situ x-ray diffraction technique together with transmission electron microscope observations. The amorphization reaction was found to occur both on the Ni/Si interfaces in terms of a planar-layer growth model and along the grain boundaries in the Ni sublayers. Thermodynamic and kinetic interpretations for the SSAR at grain boundaries are presented and an amorphous growth model is also suggested for elucidating the SSAR in polycrystalline Ni/amorphous Si multilayers.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1578-1584 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied interfacial reactions in Co/amorphous Si(a-Si) multilayers by transmission electron microscopy. We found that an intermixed layer of amorphous cobalt silicide formed in the as-deposited state. To explain the solid-state amorphization reaction, two parameters were used. They were the thermodynamic driving force (heat of formation) and the interfacial energy. The initial amorphization reaction in Co/a-Si multilayers was thermodynamically and kinetically favored. However, the formed amorphous interlayer remained about 1 nm thick and did not grow thicker with increasing modulation period and annealing temperature. The reason for this phenomenon was that the amorphous interlayer acted as a diffusion barrier to impede the amorphization reaction in Co/a-Si multilayers. Co2Si phase was always the preferred phase in the crystallization process for different average compositions of the multilayers. The mechanism that controlled the phase selection in Co/a-Si interfacial reaction was interpreted by using the model of modified heat of formation.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2471-2474 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Little is known about the interdiffusion in the amorphous Ni–Si multilayer due to the lack of suitable experimental method. In this paper, the interdiffusion phenomena in the amorphous Ni–Si multilayer are investigated by an in situ x-ray diffraction technique. The temperature-dependent interdiffusivity obtained by monitoring the decay of the first-order modulation peak as a function of annealing time can be described in terms of the Arrhenius relation. The effective interdiffusivities can be expressed as De(T)=2.13 ×10−17 exp[−(0.61±0.02)/kBT] m2/s (423–613 K). A retarded interstitial diffusion mechanism is suggested to explain the diffusion process in the amorphous multilayer films.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6292-6294 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large magnetic-field-induced strain (MFIS) of −2700 ppm has been obtained from the Heusler alloy Ni52Mn23Ga25 at 300 K. The temperature for structure transformation was confirmed by three types of magnetic measurements. A burst of MFIS up to 5400 ppm could be induced by rotating a steady field of 1 T. In the martensitic phase, the material have a high saturated magnetization of 66 Am2/kg and a high anisotropy of 0.8 T. The variant reorientation mainly occurred in the region of 0.2–0.8 T. The large MFIS is sensitive to temperature, suggesting that it can only be induced when martensite and parent phase are coexisted. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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