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  • 1
    Electronic Resource
    Electronic Resource
    Scaling theory of the Hall coefficient near the metal-insulator transition, a renormalization-group approach
    Amsterdam : Elsevier
    Nuclear Physics, Section B 415 (1994), S. 589-629 
    Details
    ISSN: 0550-3213
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0550-3213(94)90304-2
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  • 2
    Electronic Resource
    Electronic Resource
    Fabrication and temperature dependence of the resistance of single-crystalline Bi nanowires (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3847-3851 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystalline Bi nanowires with diameters ranging from 20 to 70 nm were prepared by electrodeposition using nanoporous aluminum oxide membranes rather than the more usual track-etched polycarbonate membranes. X-ray diffraction and selected area electron diffraction investigations revealed that the nanowires are essentially single crystalline and highly oriented. The temperature dependence of zero-field resistance of different diameter nanowires indicated that these Bi nanowires undergo a semimetal–semiconductor transition due to two-dimensional quantum confinement effects. The resistance maximum was observed at 50 K in zero magnetic field for 20 nm Bi nanowires, while the resistance minimum at 258 K for 50 nm Bi nanowires, due to the quantum size effect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352562
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  • 3
    Electronic Resource
    Electronic Resource
    Dose and energy uniformity over inner surface in plasma immersion ion implantation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1859-1862 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The absence of the line-of-sight restriction makes plasma immersion ion implantation an excellent interior surface treatment technique. In our experiments, we implanted both the outside and inside surfaces of a set of hollow cylindrical samples with and without a grounded conductive electrode positioned along the center of the bores to evaluate the impact energy as well as dose uniformity along the specimens. Our experimental results show that the use of the coaxial electrode increases the impact energy by 43% and retained dose by 71%. The nonuniformity is 20% to 30% and is worse with larger bore length. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368344
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  • 4
    Electronic Resource
    Electronic Resource
    Molecular characterization of two novel mutations causing factor X deficiency in a Chinese pedigree (2005)
    Oxford, UK : Blackwell Science Ltd
    Haemophilia 11 (2005), S. 0 
    Details
    ISSN: 1365-2516
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary.  Factor X (FX) deficiency is a rare bleeding disorder inherited as an autosomal recessive trait. In this study, we investigated the molecular basis of FX deficiency in a Chinese pedigree. The proposita showed a markedly prolonged activated partial thromboplastin time and a mild prolongation of prothrombin time. The levels of FX antigen and FX activity were 58.6% and 2.5%, respectively. Molecular analysis revealed that the proposita was compound heterozygous for two novel mutations: IVS1 + 1G 〉 A and G1185A (Arg347His). The aberrant transcripts from the IVS1 + 1G 〉 A mutant allele were not detected by analyzing the splicing pattern of ectopic transcripts in leukocytes of the patient with nested polymerase chain reaction after reverse transcription. We thus hypothesize that the mRNA molecules originating from the IVS1 + 1G 〉 A mutation were rapidly destroyed in vivo. Site-directed mutagenesis of FX cDNA was used to introduce FXG1185A mutation, and wild-type as well as mutant FX proteins were expressed by transient transfection in HEK 293 cells. Normal FX antigen levels both in the conditioned media of cells expressing the mutant and in cell lysates were detected by an enzyme-linked immunoadsorbent assay. Evaluation of wild-type and mutant coagulant activity demonstrated that the FX molecules carrying the Arg347His mutation have dramatically decreased activity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2516.2005.01063.x
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  • 5
    Electronic Resource
    Electronic Resource
    Identification of three F5 gene mutations associated with inherited coagulation factor V deficiency in two Chinese pedigrees (2004)
    Oxford, UK : Blackwell Science Ltd
    Haemophilia 10 (2004), S. 0 
    Details
    ISSN: 1365-2516
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary.  To investigate the molecular defects in two Chinese pedigrees with inherited factor V (FV) deficiency.A 37-year-old male (proband 1) and an 18-month-old boy (proband 2) were diagnosed as inherited coagulation FV deficiency by severely reduced plasma levels of FV activity and antigen. All 25 exons and their flanking sequence of F5 gene were amplified by polymerase chain reaction (PCR) for both probands and the PCR products were directly sequenced. Total RNA was extracted from the peripheral lymphocytes of proband 1 for detecting the changes at mRNA level.The homozygous deletion IVS8 −2A〉G was identified in the F5 gene of proband 1 and complementary DNA (cDNA) analysis revealed the abolishment of the canonical splicing site by the mutation and the activation of the cryptic acceptor site 24 bp upstream instead. The insertion introduced eight additional amino acids (AA) into the FV protein. Two heterozygous mutations of F5 gene were discovered in proband 2. The 2238-9del AG in exon 13 introduced a premature termination code at 689 AA and the substitution of G6410 by T in exon 23 lead to the missense mutation Gly2079Val.Three F5 gene mutations, IVS8 −2A〉G, 2238-9del AG and G6410T, have been identified in two Chinese pedigree with congenital FV deficiency, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2516.2004.00896.x
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  • 6
    Electronic Resource
    Electronic Resource
    Subband effect on miniband transport in laterally confined superlattices (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3867-3872 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Linear and nonlinear miniband electron transport through a laterally confined superlattice is investigated systematically using the balance-equation theory. Up to 21 transverse subbands with intrasubband and intersubband impurity and phonon scatterings are included. Nonlinear drift velocity and electron temperature as functions of the electric field are calculated at lattice temperatures ranging from 45 to 300 K for several sets of superlattices having different degrees of transverse confinements. With increasing the lateral cross-section diameters, linear mobility, peak drift velocity, threshold electric field, and all the other transport properties discussed exhibit significant oscillations at lattice temperatures as high as 300 K. Drastic changes in transport properties occur in GaAs-based systems when polar optic phonon scatterings set in or are prohibited due to subband structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352898
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  • 7
    Electronic Resource
    Electronic Resource
    A novel distributed system for plasma immersion ion implanter control and automation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1495-1498 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The high voltage and electromagnetic field environment poses a big challenge to a control system for plasma immersion ion implantation (PIII). The automation process must be immune to electric field interference produced by the high voltage power supply, modulator, radio-frequency or microwave plasma generator, MEVVA plasma sources, and so on. We have recently designed and installed a distributed control system, PIIIDCS, to automate the operation of our PIII facility. Programmable logic controllers are used as the field control stations because of their good anti-interference ability and good real time response. A DH-485 network is used as the communication link between the field controllers and the management station in order to improve the robustness and reliability of the system. The newly developed interface is designed to work in a graphic mode in Microsoft Windows 95. Test runs have shown that the system is reliable, flexible, and easy to operate. The development of this novel control system will expedite the development of commercial PIII instrumentation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148785
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  • 8
    Electronic Resource
    Electronic Resource
    Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6598-6605 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The scattering rates for the intra- and intersubband transitions of electrons in a GaAs/AlAs quantum well with a central AlAs thin layer assisted by the emission and absorption of optical phonon modes are calculated in the case where a transversal electric field is applied through the structure in order to modulate the electronic density inside the well. The role of the confined and interface phonon modes in reducing the electron mobility is analyzed separately to permit the identification of the effect of the transversal electric field on this mobility. The electron behavior indicates that electrons of different subbands can be separated in real space by the applied transversal electric field. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370167
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  • 9
    Electronic Resource
    Electronic Resource
    Ballistic spin transport through electronic stub tuners: Spin precession, selection, and square-wave transmission (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1400-1402 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ballistic spin transport is studied through electronic tuners with double stubs attached to them. The spins precess due to the spin–orbit interaction. Injected polarized spins can exit the structure polarized in the opposite direction. A nearly square-wave spin transmission, with values 1 and 0, can be obtained using a periodic system of symmetric stubs and changing their length or width. The gaps in the transmission can be widened using asymmetric stubs. An additional modulation is obtained upon combining stub structures with different values of the spin–orbit strength. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1455146
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  • 10
    Electronic Resource
    Electronic Resource
    Ordered indium-oxide nanowire arrays and their photoluminescence properties (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 839-841 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordered semiconductor In2O3 nanowire arrays are uniformly assembled into hexagonally ordered nanochannels of anodic alumina membranes (AAMs) by electrodeposition and oxidizing methods. Their microstructures were characterized by x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. A blue-green photoluminescence (PL) band in the wavelength range of 300–650 nm was observed in the In2O3/AAM assembly system. The PL intensity and peak position depend on the annealing temperature, which is mainly attributed to the singly ionized oxygen vacancy in the In2O3 nanowire array system. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389071
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