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  • 1
    Electronic Resource
    Electronic Resource
    Bound magnetic polarons and spin-flip Raman scattering in (Cd, Mn)Se
    Amsterdam : Elsevier
    Physica B+C 117-118 (1983), S. 485-487 
    Details
    ISSN: 0378-4363
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0378-4363(83)90566-1
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  • 2
    Electronic Resource
    Electronic Resource
    Diffusion barrier properties of TiN films for submicron silicon bipolar technologies (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2743-2748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the properties of reactively sputtered TiN films used as diffusion barriers for Al-Cu metallization in submicron bipolar transistors. Emitter-base diodes with shallow junctions were fabricated to monitor the integrity of the barrier via junction leakage measurements. Scanning and transmission electron microscopy were used to study the morphology and step coverage of these films, and also for barrier failure analysis. The effectiveness of the barrier depends on both the nominal thickness of the TiN layer and on the device dimensions. For thin TiN layers (∼47 nm), high junction leakage was observed on narrow emitters (0.5 μm) but not on wide emitters (5 μm). These observations highlight the reliability and yield concerns associated with the use of sputtered TiN films for deep submicron technologies. In some cases, low-temperature (500 °C) epitaxial alignment of the emitter polysilicon was observed, associated with Al penetration of the barrier. This indicates that the Al provides an enhancement of the tendency towards epitaxial alignment of the polysilicon grains. For thicker TiN layers (∼83 nm), low leakage was observed on both narrow and wide emitters, and no unusual epitaxial alignment was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351525
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetoreflectivity study of excitons in (Zn,Co)Se epilayers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1023-1025 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reflectivity spectra from single-crystal epilayers of the diluted magnetic semiconductor Zn1−x Cox Se(x=0.0076, x=0.0104) have been studied as functions of magnetic field and temperature. The excitonic spin splitting in these crystals saturates for magnetic fields B〉5 T, indicating that (Zn,Co)Se is a Brillouin paramagnet, in agreement with magnetization and electron-paramagnetic-resonance studies on the same samples. The magnetoreflectivity data yield a value for the exchange parameter difference N0 (α−β)=2420±40 meV, significantly larger than the values obtained for either Fe- or Mn-based diluted magnetic semiconductors studied to date.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102262
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  • 4
    Electronic Resource
    Electronic Resource
    Line-shape analysis of reflectance spectra from ZnSe/Zn0.99Fe0.01Se spin superlattices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2988-2991 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Line-shape analysis of magnetoreflectance spectra from ZnSe/Zn0.99Fe0.01Se quantum well structures was performed using a classical dielectric function model. This model explains the spectral dependence on the sample geometry, as well as providing additional evidence of spin superlattice formation in ZnSe/ZnFeSe heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356195
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  • 5
    Electronic Resource
    Electronic Resource
    Spin-dependent confinement in DMS-based heterostructures (invited) : 38th Annual Confrerence on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5714-5718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the results of a magneto-optical study of a class of semiconductor heterostructures in which one of the constituent layers is a diluted magnetic semiconductor (DMS). The large magnetic band splittings of DMS materials result in spin-dependent confining potentials for electrons and holes which can be changed externally by varying the applied magnetic field. The modifications in the band alignment result in changes, sometimes dramatic, of the optical properties in the vicinity of the band gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355593
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  • 6
    Electronic Resource
    Electronic Resource
    Coexistence of Brillouin and Van Vleck spin exchange in Zn1−xMnxSe/Zn1−yFeySe spin superlattice structures : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5725-5727 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied a new type of semiconductor quantum well system in which the carrier-ion exchange interactions are determined by the spin of the carrier. The samples consist of alternating layers of Zn1−xMnxSe and Zn1−yFeySe grown by molecular-beam epitaxy (MBE). At zero field, the carriers initially interact randomly with both transition metal species. When a magnetic field is applied, the excitonic wave functions are increasingly localized in one or the other of the magnetic layers according to their spin state as the competing spin exchange interactions define the confining potential. The spin components of the heavy hole exciton are subsequently dominated by different exchange interactions as revealed by their temperature and field dependence: the behavior of the spin-down component (−3/2,−1/2) is described by exchange interactions of the carriers with the Mn2+ ions and exhibits Brillouin paramagnetic behavior, while the spin-up component (+3/2,+1/2) is dominated by interactions with Fe2+ ions and exhibits Van Vleck paramagnetism. These structures are thus characterized by an initial competition and eventual coexistence of Brillouin- and Van Vleck-like paramagnetic behavior for the exciton.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355595
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence and magnetoreflectivity study of Zn1−xFexSe epilayers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 476-478 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal films of (001)Zn1−xFexSe (x=0.017, 0.027, 0.043) grown by molecular beam epitaxy on (001)GaAs have been studied using reflectivity and photoluminescence spectroscopies. Data have been obtained over the temperature range 4–77 K in magnetic fields up to 8 T in the spectral region near the band gap of 2.8 eV. The luminescence spectra show the two lowest interband excitonic transitions. From these spectra, the Zeeman splitting of the bands and the corresponding Fe2+-band electron exchange integrals were determined. The temperature dependence of the band splitting was determined through reflectivity measurements. These studies confirm the fact that Zn1−xFexSe exhibits Van Vleck paramagnetism and yield the spin-orbit splitting of the lowest Fe2+ crystal field states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99873
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  • 8
    Electronic Resource
    Electronic Resource
    Optical study of strained ZnSe/GaAs and ZnMnSe/GaAs epilayers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2936-2940 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied strain-induced band splittings of ZnSe/GaAs and Zn1−xMnxSe/GaAs epilayers of 0.064–3 μm thickness by reflectance and polarized photoluminescence. Polarized photolumi- nescence was found particularly useful in optical transition identification. The spectacular difference in magnetic field sensitivity of heavy hole and light hole exciton in ZnMnSe is also very helpful in transition identification. The evaluated heavy-light hole band splitting is in general accordance with previous data. An exceptionally strong variation of the strain with epilayer thickness is observed in the thickness range 0.5–2 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356188
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  • 9
    Electronic Resource
    Electronic Resource
    Spin lifetimes in diluted magnetic semiconductor spin superlattices : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6051-6053 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of spin superlattice structures in which spin-up and spin-down carriers occupy alternating layers in the structure has recently been reported. We report here measurements of electron and hole spin lifetimes and spin relaxation processes. In dc photoluminescence spectra, both the higher-energy (+1/2,+3/2) and lower-energy (−1/2,−3/2) heavy-hole exciton interband transitions are observed, even though it would be energetically favorable for the spin-up carriers to first relax to the spin-down state before radiative recombination. From the field dependence of the intensity ratios of these components and a rate equation model, we determine the heavy hole τhs and electron τes spin lifetimes relative to the radiative lifetime τr, with τhs/τr≈4.5 and τes/τr≈0.08, so that the heavy-hole spin lifetime is ≈50 times longer than that of the electron. This is attributed to the strain-induced splitting of the heavy- and light-hole bands, which prevents fast spin relaxation of the holes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353466
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  • 10
    Electronic Resource
    Electronic Resource
    Spin-polarized carrier populations in diluted magnetic semiconductor quantum well structures (abstract) : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6413-6413 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diluted magnetic semiconductors (DMS) offer the opportunity to significantly alter heterojunction band offsets via an applied magnetic field due to the large Zeeman splittings (enhanced g-factors) they exhibit. We have previously reported field-dependent spatial spin segregation of holes in DMS quantum well structures1,2 which resulted from the small band offset and large spin splitting exhibited by the valence band. We report here the growth of tailored Zn1−xFexSe/ZnSe quantum well structures in which both electrons and holes are spatially segregated according to their spin, resulting in spin-polarized carrier populations in the barriers and wells: the spin-down carriers are localized in the Zn1−xFexSe barriers, while the spin-up carriers are localized in the wells. Both single and multiple quantum well samples were grown by molecular-beam epitaxy on GaAs(001) substrates with 100 A(ring) barriers and wells. The heavy-hole excitonic transitions were studied with magnetoreflectivity at T=4.2 K and fields up to 8 T. The magnetoreflectivity data show that both (−3/2→−1/2) and (3/2→1/2) excitonic transitions are of equal intensity and spatially direct (type I), with the former showing the strong field dependence expected for localization in the magnetically active barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349912
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