Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Some characteristics of r.f. sputtered CuInS2 thin films (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1748-1753 
    Details
    ISSN: 0392-6737
    Keywords: Electronic properties of thin films
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Si sono ottenuti dati elettrici da sottili film di CuInS2 del tipop temprati e anodizzati su un vasto intervallo di temperature. Un'analisi dei dati della mobilità della buca rispetto alla temperatura indica che i portatori di carica sono prevalentemente diffusi da impurità neutre e ionizzate e da vibrazioni del modo acustico.
    Abstract: Резюме Получаются злектрические данные для напыленных и отожженных тонких пленок CuInS2 p-типа. Анализ зависимости подвижности дырок от температуры указывает, что носители зарядов преимущественно рассеиваются на нейтральных и ионизованных примесях и на акустических колебаниях.
    Notes: Summary Electrical data from sputtered and annealedp-type CuInS2 thin films have been obtained over a range of temperatures. An analysis of hole mobilityvs. temperature data indicates that the charge carriers are predominantly scattered by neutral and ionized impurities and by acoustic-mode vibrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457861
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Growth and characterization of CuIn1−x Fe x Te2 compounds (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1695-1700 
    Details
    ISSN: 0392-6737
    Keywords: Methods of crystal growth and purification ; Conductivity phenomena in semiconductors and insulators
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Campioni di cristalli CuIn1−x Fe x Te2 conx che varia tra 0 e 1 sono stati cresciuti con una tecnica di congelamento direzionale programmato. Tutti i composti conx≤0.3 avevano una struttura tipo calcopirite a fase singola, mentre la formazione di fase secondaria è stata osservata perx〉0.3. Le indicazioni di comportamento anomalo delle proprietà elettriche e magnetiche perx≃0.1 potrebbero essere spiegate con la delocalizzazione di elettronid che originano dal mescolamentop/d e con la forte covalenza dei composti tipo calcopirite.
    Abstract: Резюме Выращиваются кристаллические образцы CuIn1−x Fe x Te2; гдеx изменяется от 0 до 1. Все соединения сx≤0.3 имеют структуру халькопирита с единственной фазой, причем дляx〉0.3 наблюдается образование второй фазы. Признаки аномального поведения электрических и магнитных свойств приx≃0.1 могут быть овъяснены делокализациейd электронов, возникающей приp/d смешивании, и сильной ковалентностью халькопиритных соединений.
    Notes: Summary CuIn1−x Fe x Te2 crystal samples withx varying from 0 to 1 have been grown by a programmed-directional-freezing technique. All compounds withx≤0.3 had a single-phase chalcopyrite structure, whereas secondary-phase formation has been observed forx〉0.3. Indications of anomalous behaviour in the electrical and magnetic properties atx≃0.1 could be explained due to the delocalization ofd electrons originating from thep/d mixing and due to the strong covalence of the chalcopyrite compounds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457852
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Electrical properties of (CuIn)1−zMn2zTe2 alloys (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3382-3386 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical transport properties between 80 and 300 K of polycrystalline samples of (CuIn)1−zMn2zTe2 semimagnetic semiconducting alloys are studied. These are found to have disordered chalcopyrite α(z≤0.1), ordered chalcopyrite α' (0.1〈z≤0.25), and ordered zinc-blende β' (0.25〈z≤0.57) structures. From an analysis of the electrical data, the values of the activation energy EA, density of states effective mass of the holes mp, valence-band deformation potential Eac, and the concentration of the ionized impurities Ni for the alloys are estimated. The linear behavior is observed of mp with z, with a discontinuity when the structure of the alloys changes from α' to β'. However, the extrapolated value of mp at z=0 from the region of chalcopyrite structure is in close agreement with that of p-type CuInTe2. On the other hand, the deformation potential of the valence-band varies linearly with z.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345349
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence, infrared reflectivity, and Raman spectra of the ordered vacancy compound CuGa3Se5 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2293-2296 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL), infrared reflectivity (IR), and Raman spectra of the ordered vacancy compound CuGa3Se5 have been studied. Analysis of the data indicates that the main PL emission is due to a donor-acceptor pair recombination. Donor and acceptor levels with activation energy of 15 and 300 meV, respectively, were estimated. The lattice vibrational modes of this compound have also been obtained at 300 K by a combined analysis of IR and Raman spectra. Lines common to both spectra, observed at 48, 64, 105, 142, 187, 200, 218, 250, and 274 cm−1, were identified with E or B2 modes. The most intense peak at 166 cm−1 and those observed at 72 and 90 cm−1, which are only Raman active, are assigned to the A1 and B1 modes, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372176
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Raman spectra of the chalcopyrite compound CuInTe2 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3925-3927 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice vibrational modes of the chalcopyrite compound CuInTe2 have been obtained at several temperatures by the unpolarized Raman spectra. Lines observed at 48, 74, 129, 138, 155, and 185 cm−1, identified with E modes, and at 60, 106, and 170 cm−1, assigned to B2 modes, agree quite well with the peaks reported from infrared reflectivity data. On the other hand, using the available theoretical models, the peaks that appear at 123 cm−1 and those observed around 65, 116, and 223 cm−1, which are only Raman active, are assigned to the A1 and B1 modes, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369767
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Raman spectra of CuInTe2, CuIn3Te5, and CuIn5Te8 ternary compounds (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3439-3444 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: From the analysis of Raman spectra, a comparative study of the lattice vibrational modes in CuInTe2, and of the ordered defect compounds (ODC) CuIn3Te5 and CuIn5Te8 of the Cu–In–Te system is reported. It is found that Raman lines in the ODCs appear at very nearly the same frequency as in CuInTe2. This is explained on the basis that the cation vacancy should not be considered merely as an empty site in the lattice but a localized region of positive Coulomb potential that attracts the valence electrons of the surrounding anions. It is proposed that the vacancy-Te force constant caused by the positive potential is of the same magnitude as in the Cu–Te stretching bond. The symmetry assignment of the observed lines is tentatively made by a comparative study of the vibrational modes of its binary analog Zn0.5Cd0.5Te, with phonon modes observed in CuInTe2 from polarized infrared optical measurements, and by estimating the modes frequency using several models reported in the literature for the chalcopyrite compounds. These are A1 mode at 127 cm−1; B1 at 58, 114, and 146 cm−1, E modes at around 48, 72, 137, 160, 192, and 218 cm−1; B2 at 64 and 104 cm−1; and E and/or B2 at 170 and 184 cm−1. The highest phonon frequencies observed at 237 and 270 cm−1 are attributed to the combination of E and B2 modes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289225
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Temperature dependence of the optical energy gap and Urbach's energy of CuIn5Se8 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4423-4428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of the ordered defect compound CuIn5Se8, which crystallizes in a hexagonal structure, have been studied by the absorption technique. The analysis of the data shows that the band gap energy EG varies from 1.23 to 1.13 eV between 10 and 300 K. It is found that the variation of EG with temperature is due to the contribution of both acoustic and optical phonons with a characteristic phonon energy of about 14 meV. The optical absorption coefficient just below the absorption edge varies exponentially with photon energy indicating the presence of Urbach's tail. The phonon energy hνp associated with Urbach's tail, which is found to be 53 meV, is higher than the highest optical phonon mode reported for this compound, which is about 29 meV. The origin of the additional energy is attributed to the contribution of localized modes produced by structural disorder of low energy formation. An empirical relation, also used earlier in the case of 1:1:2 and other ordered defect compounds of the 1:3:5 phases, explains very well the variation of Urbach's energy with temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405144
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Scattering of the charge carriers by ordered arrays of defect pairs in ternary chalcopyrite semiconductors (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 998-1000 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of CuIn3Se5, CuGa3Te5, and CuIn3Te5 that contain arrays of donor–acceptor defect pairs (DADPs) in the lattice structure are studied. An expression for the scattering of the charge carriers with the DADPs, calculated from simple first principles, is proposed. This, when combined with other well-established mechanisms, explains the temperature dependence of the relatively low carrier mobility in these compounds in the activation regime very well. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1447597
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    On the band gap anomaly in I–III–VI2, I–III3–VI5, and I–III5–VI8 families of Cu ternaries (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 94-96 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The experimentally observed energy band gap difference (ΔE1) between the I–III3–VI5 and I–III–VI2 and the energy band gap difference (ΔE2) between the I–III5–VI8 and I–III–VI2 phases of Cu–In–Se, Cu–Ga–Se, Cu–In–Te, and Cu–Ga–Te systems is explained in terms of the relative shift of the conduction band minimum (CBM) and the valence band maximum (VBM) caused due to the presence of the ordered VCu and [In(Ga)Cu〈sup ARRANGE="STAGGER"〉+2+2 VCu〈sup ARRANGE="STAGGER"〉−1] defect pair and to the effect of the p–d hybridization. The nearly linear variation of ΔE1 and ΔE2 with p–d hybridization of the corresponding I–III–VI2 phase suggests that in selenides the lowering of the VBM predominates over that of the CBM. In the case of the Cu–In–Te system, they are very near the same magnitude, whereas in Cu–Ga–Te the lowering of the CBM predominates over that of the VBM. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126888
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Raman spectra of the ordered vacancy compounds CuIn3Se5 and CuGa3Se5 (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 441-443 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical vibrational modes of the ordered vacancy compounds CuIn3Se5 and CuGa3Se5 have been obtained by Raman spectra at various temperatures. The totally symmetric A1 mode appears around 155 and 167 cm−1 in CuIn3Se5 and CuGa3Se5, respectively. All the lines observed, except the B1 modes, present a reduction in their frequencies by about 10% as compared to the corresponding values in the CuInSe2 and CuGaSe2 chalcopyrites. This is due to the presence in these compounds of an array of vacancies occupying particular sites in the cation sublattice. These tend to relax the stretching forces thus reducing the vibrational frequencies. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121893
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...