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  • 1
    Electronic Resource
    Electronic Resource
    Effect of proton irradiation on the critical current and resistance of high Tc grain boundary Josephson junctions (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 511-513 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects of defects on the critical current and resistance of high Tc grain boundary Josephson junctions using irradiation with 2-MeV protons. Radiation-induced defects cause the critical current (Ic) to decrease and the shunt resistance (R) to increase such that IcR∝1/R. The data are consistent with a tunneling barrier height increasing with fluence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111089
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  • 2
    Electronic Resource
    Electronic Resource
    Disorder effects in reduced dimension: Indium–phosphide-based resonant tunneling diodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6951-6953 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Disorder alters the current–voltage characteristics of low-dimensional devices such as resonant tunneling diodes (RTDs) differently than conventional electronic devices, because of the increasing importance of quantum effects. There are now enough experimental data, including new measurements presented here, for the basis of a detailed model of radiation effects in RTDs to be developed. A model is presented in which the reduced dimensionality in the density of states of RTDs renders scattering of charge carriers from atomic defects highly effective in removing the carriers from resonance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324680
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  • 3
    Electronic Resource
    Electronic Resource
    Critical current enhancement in proton-irradiated Tl2CaBa2Cu2O8 films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1119-1121 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured changes in the superconducting transition temperature Tc and critical current density Jc of epitaxial Tl2CaBa2Cu2O8 films upon exposure to 2 MeV protons. Jc was measured inductively at 4.2 and 77 K and in fields of H=0 and 0.2 T. At 77 K and H=0, Jc decreases monotonically with increasing fluence Φ. The rate of decrease is about 1.8 times greater than for YBa2Cu3O7 films, even though the rate of change of Tc with Φ is comparable. At 4.2 K, Jc is initially enhanced, even at H=0. The maximum observed increase is 34% (to 8 MA/cm2) at Φ≈1016 protons/cm2 and H=0.2 T. This enhancement is attributed to pinning of magnetic flux lines by proton-induced defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347384
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  • 4
    Electronic Resource
    Electronic Resource
    Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2581-2583 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature current–voltage measurements have been made on InAs/AlSb/GaSb resonant interband tunnel diodes irradiated with 2 MeV protons to determine the effect of displacement damage on the negative resistance peak current Ip and the peak-to-valley current ratio P/V. Diodes with 5 and 13 ML AlSb barrier thickness were irradiated and measured several times until the total fluences reached 1×1015 and 2×1014 H+/cm2, respectively. The current due to radiation-induced defects has a nonlinear voltage dependence, with a large increase occurring in the voltage range between the negative resistance peak and the valley. Ip increased 〈50% while a large increase in the valley current decreased the P/V ratios to about 2. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1363697
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  • 5
    Electronic Resource
    Electronic Resource
    Universal behavior in irradiated high-electron-mobility transistors (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2791-2793 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation-induced decreases in the drain current Id in a wide range of GaAs/AlGaAs high-electron-mobility transistors (HEMTs) are shown to be directly proportional to the induced defect concentration. The constant of proportionality depends only weakly on gate length, doping profile and concentration, layer thickness, device geometry, and operating voltages, and is hence nearly device independent. The same proportionality holds when the channel layer material is changed from GaAs to InGaAs. However, when the donor layer material is switched to InGaP (in InGaAs/InGaP HEMTs), the constant of proportionality changes, and the drain current becomes 16–17 times more radiation tolerant. The drain current in InGaAs/InAlAs HEMTs is about 30 times more radiation tolerant than in InGaAs/AlGaAs. We propose that the linear dependence of Id on defect concentration arises from high-efficiency scattering of carriers out of the two-dimensional electron gas in the channel layer, and that the slope of the linear relationship is determined by the efficiency with which the donor layer reinjects scattered carriers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1470243
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  • 6
    Electronic Resource
    Electronic Resource
    MeV ion-induced suppression of resonance current in InP-based resonant tunneling diodes (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2562-2564 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of an experiment on 12.5 MeV Si4+ ion-irradiated InP-based resonant tunneling diodes. Radiation damage suppresses the entire resonance in direct proportion to the ion fluence. The suppression is not caused by a change in the tunneling barrier heights or widths, as previously thought; nor is it caused by radiation-induced increases in the leakage current. In fact, none of the internal parameters such as the Fermi energy and the resonant energy of the quantum well are expected to be greatly altered by the irradiation. We propose that radiation-induced disorder decreases the resonance current by scattering carriers out of the reduced-dimensional region of k space in which tunneling is allowed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126408
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  • 7
    Electronic Resource
    Electronic Resource
    Critical-current enhancement in particle-irradiated cuprate semiconductors (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2600-2602 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed measurements have been made of the magnetic field (0〈H〈6 T) and temperature (10 K〈T〈100 K) dependencies of the critical current density jc in Tl2CaBa2Cu2O8 films before and after irradiation with incremental fluences (0〈Φ〈3×1016 cm−2) of 2 MeV protons. The results are interpreted quantitatively in terms of radiation-induced changes in (1) the critical temperature, (2) the rate of thermal flux creep, and (3) local scale superconductivity. Radiation-induced enhancements in jc are described by an expression which allows the fluence that maximizes jc to be predicted as a function of H, T, pinning energy, and particle type.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105915
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  • 8
    Electronic Resource
    Electronic Resource
    Controllable alteration of the pinning energy in Tl2Ca2BaCu2O8 films by proton irradiation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 252-254 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Irradiation with 2 MeV protons increases the vortex pinning energy in Tl2Ca2BaCu2O8 films. The maximum pinning energy occurs at a defect density that depends on (1) the density of flux pinning centers in the unirradiated film, (2) the ratio of pinning energies of the pre- and post-irradiation defects, and (3) the effectiveness of the incident particle in creating pinning centers. An explicit formula for the pinning energy as a function of fluence is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110357
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  • 9
    Electronic Resource
    Electronic Resource
    Order-of-magnitude method for estimating the fluence that optimizes the critical current in particle-irradiated cuprate superconductors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1237-1239 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The particle fluence that maximizes the critical current enhancement in cuprate superconductors is shown to be closely related to the nonionizing energy loss (displacement damage) of a given particle. In many cases, only the incident particle type and energy need to be known in order to allow an order-of-magnitude prediction of the optimal fluence for enhancing the critical current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107606
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  • 10
    Electronic Resource
    Electronic Resource
    Proton radiation effects in microwave cavities and ring resonators fabricated from YBa2Cu3O7−δ (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1563-1565 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first radiation effects study on a superconducting ring resonator made from thin-film YBa2Cu3O7−δ. Exposure to 2 MeV protons causes the superconducting transition temperature Tc to decrease predictably with fluence. For temperatures below about 0.9Tc , there is no significant change in the transmission coefficient, the center frequency, or the quality factor Q of the resonator, even for doses in excess of 4×1016 protons/cm2 (∼0.04 displacements per film atom). Similarly, the low-temperature surface resistance Rs of an unpatterned film does not change with irradiation. We show that this insensitivity to radiation is not predicted by standard theory, and that the dominant part of Rs at low temperature is the residual resistance R0. Thus any viable theory describing the origin of R0 must, as a criterion, explain the origin of its insensitivity to large irradiation doses. This criterion is used to evaluate theories ascribing R0 to weak links, flux pinning, impurities, and lattice imperfections.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105178
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