Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    The dissociation energy and the charge state of a copper-pair center in silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 474-476 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal dissociation of Cu pairs was studied in p-type silicon. The dissociation energy of the Cu pair was found to be 1.02±0.07 eV, twice as high as the binding energy of a Coulombically bound donor-acceptor pair placed on nearest neighbor 〈111〉 sites. This implies that the pair is either covalently bonded, or it consists of an ionically bonded doubly negatively charged acceptor and a singly charged donor. To distinguish between these two models, the dependence of the hole emission rate on the electric field in the depletion region was studied. The absence of the Pool-Frenkel emission enhancement ruled out the acceptor nature of the center and the purely ionic type of bonding. On the other hand, the polarization potential describing emission from a neutral impurity gave a satisfactory fit to the experimental data. It is concluded that the Cu pair is a donor with either covalent or mixed type of bonding. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120790
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 356-358 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of as-deposited and annealed Cr/GaAs Schottky contacts was investigated by high resolution and analytical electron microscopy. The Schottky barrier height for contacts prepared by cleavage and in situ metallization in ultrahigh vacuum was stable upon annealing up to 370 °C in N2. In contrast, the contacts prepared on air-exposed substrates show an increase of the barrier height by 80 meV during annealing in the same range of temperatures. Comparing these two types of contacts, distinct differences in the grain size, presence of an oxide layer at the interface, and change in stoichiometry in the substrate beneath the contact were detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100968
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1881-1883 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high degree of crystalline perfection of these layers. For a layer grown at 200 °C and unannealed, x-ray diffraction revealed a 0.1% increase in the lattice parameter in comparison with bulk GaAs. For the same layer, EPR detected arsenic antisite defects with a concentration as high as 5×1018 cm−3. This is the first observation of antisite defects in MBE-grown GaAs. These results are related to off-stoichiometric, strongly As-rich growth, possible only at such low temperatures. These findings are of relevance to the specific electrical properties of low-temperature MBE-grown GaAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101229
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2090-2092 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced incorporation of Si is observed in the metalorganic chemical vapor deposition of homoepitaxial GaAs layers, grown in the presence of Si substrates placed adjacent to the GaAs substrates in the reactor. The electron concentrations of the GaAs layers are a function of the proximity to the Si substrates and the growth temperature, and do not appear to depend on the location of the Si substrates relative to the flow direction of the carrier gases and the type of reactor used for the growth, i.e., horizontal or vertical. Reduction in electron concentrations is observed when Si substrates are covered with passivating layers of either SiO2 or Si3N4. These results provide evidence of a gas phase reaction and transport of Si to the growing GaAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102092
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    New mechanism for Si incorporation in GaAs-on-Si heteroepitaxial layers grown by metalorganic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1674-1676 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new mechanism is proposed for Si incorporation in GaAs-on-Si heteroepitaxial layers grown by metalorganic chemical vapor deposition. This mechanism involves gas phase transport of the Si to the heteroepitaxial layers during growth. This mode of Si uptake could operate in addition to the previously proposed mechanism of Si incorporation by enhanced diffusion from the heterointerface through defects in the GaAs layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102232
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Effect of matrix on InAs self-organized quantum dots on InP substrate (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 362-364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs self-organized quantum dots in In0.53Ga0.47As and In0.52Al0.48As matrices have been grown on InP substrates by molecular beam epitaxy. The dot size in InGaAs has been found to be 3–4 times larger, but the areal density about an order of magnitude smaller than that in InAlAs. Low-temperature photoluminescence (PL) of the InAs/InGaAs quantum dots is characterized by a narrow (35 meV) PL line as compared to that of InAs/InAlAs quantum dots (170 meV). Quantum dot formation increases the carrier localization energy as compared to quantum well structures with the same InAs thickness in a similar manner for both InAs/InGaAs and InAs/InAlAs structures. The effect of the barrier band gap on the optical transition energy is qualitatively the same for quantum well and quantum dot structures. The results demonstrate a possibility of controlling the quantum dot emission wavelength by varying the matrix composition. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120737
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Determination of excess phosphorus in low-temperature GaP grown by gas source molecular beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1671-1673 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaP films, epitaxially grown at a low temperature (LT) of ∼200 °C by gas source molecular beam epitaxy, were reported recently to have excess phosphorus. In this letter, we report on the quantitative determination of the excess phosphorus in the LT films, using various approaches. Analytical scanning transmission electron microscopy, double-crystal x-ray diffraction, and particle-induced x-ray emission showed that the LT GaP films incorporated excess phosphorus of ∼0.6–2 at. %. The amount of excess phosphorus estimated from Raman scattering measurements, using the LO-TO phonon frequency splitting data of the as-grown LT GaP and bulk GaP, was in general agreement with those obtained from other techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112881
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Morphological transition of InAs islands on GaAs(001) upon deposition of a GaAs capping layer (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1677-1679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction between a GaAs cap and InAs islands grown on vicinal GaAs(001) has been studied by transmission electron microscopy and atomic force microscopy. Samples were prepared by molecular beam epitaxy at 480 °C. Upon GaAs cap deposition, it was found that the previously grown InAs islands undergo a novel type of morphological transition, i.e., a transition from disk-shaped to ring-shaped islands. InAs becomes depleted or entirely absent in the central area of what had been a disk-shaped InAs island. The GaAs cap was also shown to be virtually absent within the same central region, resulting in the formation of crater-like surface depressions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112883
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Effect of boron on the deep donors (DX centers) in GaAs:Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1344-1346 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We found that, when boron was introduced into GaAs:Si, the deep donors induced by pressure exceeding 20 kbar reported previously by M. Mizuta, M. Tachikawa, H. Kukimoto, and S. Minomura [J. Appl. Phys. 24, L143 (1985)] disappeared while new donor levels with reduced binding energies and capture barrier heights appeared. It is proposed that B atoms paired up with Si donor atoms and the resultant change in the short-range potential of the Si donor atoms depressed the capture barrier height of the pressure-induced deep donor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100710
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Schottky barrier instabilities due to contamination (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 145-147 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We reported here a systematic study of the annealing-induced changes in the barrier height of Schottky barrier diodes fabricated on atomically clean and contaminated surfaces. Al, Ag, Au, and Cr/GaAs(110) diodes were fabricated by in situ deposition on clean n-type GaAs(110) surfaces prepared by cleavage in ultrahigh vacuum and on contaminated surfaces prepared by cleavage and exposure to the atmosphere for ∼1–2 h. This study demonstrates that the as-deposited barrier height and the annealing-induced changes in the barrier height of diodes formed with an interfacial layer of contamination are distinctly different from the characteristics of diodes formed on clean semiconductor surfaces. The presence of an interfacial layer of contamination is found to significantly degrade the stability of the diode's barrier height to annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100351
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...