ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We report on investigation of p-type doped, SiC wafers grown by the Modified- PhysicalVapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity,carrier concentration and mobility, temperature-dependant Hall effect measurements have beenmade in the range 100-850 K using the Van der Pauw method. The temperature dependence of themobility suggests higher Al concentration, and higher compensation, than estimated from SIMS.Additional LTPL measurements show no evidence of additional impurities in the range ofinvestigation, but suggest that the additional compensation may come from an increasedconcentration of non-radiative centers
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.633.pdf
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