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  • 1
    Electronic Resource
    Electronic Resource
    Coherent branched flow in a two-dimensional electron gas (2001)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 410 (2001), S. 183-186 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Semiconductor nanostructures based on two-dimensional electron gases (2DEGs) could form the basis of future devices for sensing, information processing and quantum computation. Although electron transport in 2DEG nanostructures has been well studied, and many remarkable phenomena have already ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35065553
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  • 2
    Electronic Resource
    Electronic Resource
    Cryogenic field-effect transistor with single electronic charge sensitivity (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 631-633 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated matched pairs of cryogenic field-effect transistors with input charge sensitivity qn=0.01 e/(square root of)Hz at T=1.3 K, low input capacitance 0.4 pF, and extremely high input resistance in excess of 1015 Ω. Low leakage permits dc charge-coupled operation for times up to ∼103 s. The channel noise is characterized by a flat spectrum at high frequencies, and 1/f noise below a corner frequency fc〈1 kHz. These devices can resolve charge differences as small as qn(square root of)fc=0.4e.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111072
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  • 3
    Electronic Resource
    Electronic Resource
    Avalanches and self-organization in the dynamics of cellular magnetic domain patterns (invited) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5436-5440 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cellular magnetic domain patterns in magnetic garnet films are an example of a spatially-extended metastable system whose evolution is limited by topological constraints. For sufficiently large applied magnetic fields, the entire pattern is under tension and can respond to local perturbations via large collective motions. In this regime disordered cellular patterns respond to small increases in applied field or to manual cell breakage via avalanches of sequential cell destruction which sweep through the pattern via the motion of cell walls. After one avalanche has stopped another can be started by a small increase in field or by another manual cell breakage; the system thus tends to self-organize into barely stable states. The measured distributions of avalanche size and duration are best fit by power laws. These features suggest that cellular avalanches may be an example of self-organized criticality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348002
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  • 4
    Electronic Resource
    Electronic Resource
    Conductance fluctuations and quantum chaotic scattering in semiconductor microstructures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 3 (1993), S. 643-653 
    Details
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We review recent experiments on aperiodic conductance fluctuations in ballistic GaAs/AlGaAs microstructures in the shape of a stadium billiard and a circle with point-contact leads, measured at millikelvin temperatures. Much of the observed behavior can be analyzed within a semiclassical approach to quantum chaotic scattering. After a brief review of the Landauer–Büttiker formulation of coherent transport, a variety of novel experimental phenomena and comparisons to semiclassical theory are presented. In particular, we discuss quantum-enhanced backscattering, the power spectrum of conductance fluctuations, crossover to the high-magnetic-field and tunneling regimes, and an application allowing the rate of phase-randomizing scattering to be measured in chaotic ballistic microstructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.165927
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  • 5
    Electronic Resource
    Electronic Resource
    Fabrication of ultrathin drawn Pt wires by an extension of the Wollaston process (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1344-1346 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have produced single ultrathin Pt wires with diameters as small as 80 A(ring), using an extension of the Wollaston composite drawing process. These wires were used in experiments to test the theory of quasi-one-dimensional electronic localization and interaction effects at liquid-helium temperatures. The procedures developed to draw composite wires and remove the outer jacket are described in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138002
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  • 6
    Electronic Resource
    Electronic Resource
    Measuring interactions between tunnel-coupled quantum dots in the quantum Hall regime (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4043-4045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present measurements of the relaxation of frustrated charge configurations via tunneling in a double quantum dot in the quantum Hall regime. We studied transport through two quantum dots in series at each of three Landau level filling factors: ν=2, 3, and 4. The double dot conductance was measured as a function of the induced charge on each dot and of the interdot tunnel conductance to demonstrate the evolution of the charging diagram with increasing interdot electron tunneling. At all three filling factors, we find that the evolution from well separated to joined dots is complete at an interdot tunnel conductance Gint≅e2/h, in contrast with the zero magnetic field case. We also observe that the residual interaction energy relative to the charging energy increases above the zero field value. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371326
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  • 7
    Electronic Resource
    Electronic Resource
    Nonlinear transient response of extrinsic Ge far-infrared photoconductors (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5457-5469 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Physical mechanisms responsible for nonlinear phenomena and anomalous transient response of cooled extrinsic far-infrared photoconductors are discussed. A simple model describing carrier generation, trapping, and impact ionization is presented, which describes the transient response on fast time scales 10−3 to 10−4 sec, neglecting changes in space charge. Carrier heating by a dc electric field produces relatively fast, damped oscillatory response to external excitation. A small-signal analysis of these equations is a test of stability. An analysis of the role of ideal electrical contacts and space charge is also presented. The very slow (∼1 sec) overshoot and transient response commonly observed in cooled extrinsic photoconductors is explained by the dynamics of trapped space charge near the injecting electrical contact. A small-signal analysis determines the characteristic time constants for these processes, which are typically ∼1 sec. Calculated examples of the recombination and ionization coefficients, dc I-V curves, differential equation flow diagrams, and transient response are presented for parameters typical of p-type Ge photoconductors doped with shallow acceptor levels, and suggestions for the design of more stable photoconductors are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334822
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  • 8
    Electronic Resource
    Electronic Resource
    Microelectromagnets for the control of magnetic nanoparticles (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3308-3310 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microelectromagnet matrix and a ring trap that position and control magnetic nanoparticles are demonstrated. They consist of multiple layers of lithographically defined Au wires separated by transparent, insulating polyimide layers on sapphire substrates. Magnetic field patterns produced by these devices allow microscopically precise control and manipulation of magnetic nanoparticles. A microelectromagnet matrix produces single or multiple peaks in the magnetic field magnitude, which trap, move, and rotate magnetic nanoparticles, as well as electromagnetic fields to probe and detect particles. Microelectromagnets are new tools with which to study and manipulate nanoparticles and biological entities. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419049
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  • 9
    Electronic Resource
    Electronic Resource
    Strongly capacitively coupled quantum dots (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1818-1820 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double quantum dots were formed in a gated GaAs/AlGaAs heterostructure with negligible interdot tunneling; strong capacitive coupling was provided by a floating interdot capacitor. The interdot capacitance was measured to be 0.28CΣ, where CΣ is the single-dot capacitance. Coulomb blockade conductance images for both dots versus side gate voltages at 70 mK show a hexagonal pattern of peaks; the double dot acts as a single-electron current switch. For weak tunneling, the conductance peaks of both dots fit thermally broadened line shapes. Charge fluctuations produced by strong tunneling on one dot are induced on the second, filling in its peak splitting. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456552
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  • 10
    Electronic Resource
    Electronic Resource
    Evolution of Coulomb blockade spectra in parallel coupled quantum dots (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 424-426 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report low-temperature conductance measurements in the Coulomb blockade regime on two nominally identical tunnel-coupled quantum dots in parallel defined electrostatically in the two-dimensional gas of a GaAs/AlGaAs heterostructure. We find that the Coulomb blockade spectra of such devices exhibit two distinct sets of peaks, each of which behaves differently with varying interdot tunnel conductance and with temperature. The results conform to recent theories regarding the role of interdot quantum charge fluctuations, and provide evidence for the possible role of inelastic cotunneling between dots at finite interdot conductances. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124396
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