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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1442-1448 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of preparation conditions on the morphology and the resulting oxidation behavior of amorphous GdTbFe films was studied. The morphology was characterized by transmission electron microscopy and mass-density measurements, the magnetic properties by torque and vibrating sample magnetometer measurements, and the oxidation kinetics by in situ measurements of electrical conductivity and Hall hysteresis loops. For the first time a quantitative comparison of the aging kinetics of evaporated and magnetron sputtered films prepared at different Ar sputter gas pressures and substrate-target distances is reported. With increasing the pressure-distance product from 36 to 192 Pa mm the always-observed columnar structure becomes much more pronounced and the mass density, electrical conductivity, and corrosion resistance of the films decrease significantly. The pressure-distance product for thermalization plays an important role in determining the microstructure of the films. Evaporated films show similar features to dc magnetron sputtered films prepared at pressure-distance products of about 100 Pa mm. The oxidation rate is proportional to the porosity of the films and shows, independent of the preparation conditions, an activation energy of 0.3 eV.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3343-3345 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous GdTbFe thin films were produced by dc magnetron sputtering in argon atmosphere at varying partial pressures of nitrogen, oxygen, and water. The compensation temperature Tcomp, the Curie temperature TC, and the uniaxial magnetic anisotropy constant Ku decrease strongly with increasing impurity concentration in the films. The influence of nitrogen on Tcomp and Ku is about a factor of 3 less than that of oxygen and water. The strong decrease of Tcomp and Ku is due to the preferred reaction of the impurities with the rare-earth (RE) atoms. This leads to a preferred deactivation of the latter resulting in a decrease of the rare-earth (RE) sublattice magnetization. Moreover, the uniaxial magnetic anisotropy is primarily based on the single ion anisotropy of the Tb atoms. If these are deactivated Ku decreases. At increasing impurity concentrations the selectivity of deactivation decreases and increasing amounts of Fe are affected. Thus, the steepest decrease of Tcomp and Ku is observed at low concentrations. For Tcomp the mean values of the slopes at concentrations below 1 at. % are 35 K per at. % for nitrogen, 85 K per at. % oxygen (Ar/oxygen atmosphere), or 125 K per at. % oxygen (Ar/water atmosphere). Ku is reduced to half its original value at concentrations of 4 at. % nitrogen, 1.2 at. % oxygen (Ar/O2), and 0.9 at. % oxygen (Ar/H2O) in the films. The Curie temperature TC decreases at a rate of about 10 K per at. % impurity. This is due to the diminishing magnetic interactions at increasing impurity incorporation.
    Type of Medium: Electronic Resource
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