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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 264-268 (Feb. 1998), p. 1243-1246 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 232 (1994), S. 151-157 
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5365-5365 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonlinear waves in the form of solitons in magnetic films are attracting attention because of the interesting possibility of making novel spatial, and temporal, soliton devices that will operate in the technologically important microwave (GHz) frequency window. Some fascinating pioneering experimental work has been performed in this area and there is now every possibility that manipulation of solitonlike microwave pulses will be the basis of an entirely new range of devices. Both theory and experiment show that solitons are extremely robust and behave rather like particles. Magnetic films look set to become as successful as optical fibers in supporting bright envelope solitons; yet soliton behavior can often seem hard to comprehend. While they are subtle in their behavior they can be understood from many points of view that are physically, or mathematically, based. This presentation will explain what bright microwave envelope solitons are, drawing upon as much physical insight and analogy as possible. The necessary and sufficient conditions for soliton existence will be carefully set out, especially with respect to their relationship to the input conditions of a device. A substantial number of numerical examples will be used and the prospects for major expansion in the experimental area will be assessed. In the latter part of the presentation some important applications for solitons will be addressed. These will include the analysis of a switching device but logic devices, and various forms of pump–probe arrangements, will also be retrieved. Finally, the optimistic view that solitons in magnetic materials are now realistic tools will be expressed and the opportunities provided by dark and higher-dimensional solitons will be discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4546-4550 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of high-resistivity InP with resistivity up to 107 Ω cm, obtained by thermal diffusion of Cu at 800 °C for over 20 h into undoped and p-type InP samples, are investigated. Hall-effect measurements showed that the compensation mechanism in the slowly cooled sample is different from that in the quickly cooled samples. Photoluminescence was quenched in the quickly cooled samples when annealed at 350 °C and the anneal temperature at which the sample resistivity and carrier mobility reached the maximum. It is shown that the electrical compensation in the slowly cooled sample could be understood by a simple deep-level compensation model. However, the semi-insulating behavior of the quickly cooled samples appears to be consistent with an internal Schottky depletion model associated with the Cu precipitates. The photoluminescence quenching is due to the Cu precipitates acting as effective nonradiative recombination centers.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 3333-3335 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1951-1954 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a simpler and more reliable method of thermoelectric effect spectroscopy (TEES), eliminating the second heater in the technique. We have applied this method to the deep level studies in the semi-insulating undoped or Cr-doped GaAs materials and in the GaAs epitaxial layers grown at a low temperature by molecular beam epitaxy. We have found that the electrical contacts made on front and back surfaces of the sample are more reliable for the TEES measurement than both contacts made on the same surface. In this contact arrangement, the temperature difference of about 1–2 K between the back and front surfaces is enough to produce a clear and reliable TEES data, without the need for a second heater. The results obtained by TEES are consistent with the results obtained by photoinduced transient spectroscopy (PITS) and by thermally stimulated current (TSC) measurements. The TEES results clearly distinguish between the electron traps and the hole traps. We discuss the results on the various semi-insulating GaAs samples and the advantages and limitations of the TEES technique.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3711-3716 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zn-doped GaxIn1−xP epilayers grown by metalorganic chemical vapor deposition have been studied in a wide range of GaP mole fraction. The Zn distribution coefficient was studied as a function of alloy composition. With a constant flow rate of diethylzinc, a decreasing net hole concentration was observed with increasing GaP mole fraction. The I-V characteristics of Au on p-GaxIn1−xP Schottky diodes show a deviation from an ideal thermionic behavior as the lattice mismatch increases. This deviation was analyzed in terms of the shunt resistance which decreased exponentially with the mismatch. A dominant hole trap located at EV+0.84 eV was detected by deep-level transient spectroscopy in a Ga0.032In0.968P layer. The density of this hole trap significantly increases with increasing lattice mismatch.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 8010-8015 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlN films grown by either organometallic vapor phase epitaxy (OMVPE) or pulsed laser deposition (PLD) can be used to encapsulate SiC when heated in an argon atmosphere at temperatures at least as high as 1600 °C for times at least as long as 30 min. The coverage of the AlN remains complete and the AlN/SiC interface remains abrupt as determined by Auger electron spectroscopy. However, considerable atomic movement occurs in the AlN at 1600 °C, and holes can form in it as the film agglomerates if there are large variations in the film thickness. Also, the SiC polytype near the surface can in some instances be changed possibly by the stress generated by the epitaxial AlN film. Using x-ray diffraction measurements, we also found that, during the 1600 °C anneal, grains with nonbasal plane orientations tended to grow at the expense of those with basal plane orientations in the OMVPE films, whereas grains with only the basal plane orientation tended to grow in the PLD films. However, there is no indication that the type of grain growth that is dominant affects the film's ability to act as an encapsulate. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7130-7133 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ferroelectric-superconducting photodetector has been developed and characterized. An atomically ordered PbZrTiO3 (PZT) ferroelectric gate was grown over a c-oriented YBa2Cu3O7−x (YBCO) high Tc superconductor substrate by excimer laser deposition. Irradiation of the PZT gate with photons near the ferroelectric gap energy resulted in a measurable change of the drain-source photocurrent with the device at a temperature near Tc of the YBCO. The critical temperature of the YBCO base was shifted up to 4 K when the PZT gate was irradiated with photon flux of wavelength from 300 to 500 nm. A responsivity of 360 A/W was measured and an upper bound on response time to optical irradiation of 100 ns was determined. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1858-1860 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of electron paramagnetic resonance (EPR) of nitrogen-doped 6H-SiC is reported here. By use of both first- and second-harmonic EPR detection, the predicted spectral fingerprints for nitrogen pairs and triads were found at low temperatures. The pair spectrum was present in the second harmonic, while the spectral feature for both nitrogen pairs and triads was evidenced in the first harmonic. At least one nitrogen donor of the identified pairs and triads is located at one of the two available quasicubic carbon sites, and the other(s) could be at any one of the two quasicubic sites and the hexagonal carbon site. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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