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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2437-2438 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved a highly doped p-type ZnSe layer using a Li3N diffusion technique. The hole concentration of the p-type ZnSe layer, grown on a GaAs substrate by metalorganic vapor phase epitaxy, reached a level as high as 1017 cm−3. With the diffusion temperature of 470 °C, the resistivity of the layer is as low as 0.4 Ω cm, with hole concentration p(approximately-greater-than)9×1017 cm−3 and hole mobility μp=17 cm2/V s. We made an ohmic contact by using this p+-type ZnSe as a contact layer for p-ZnSe epilayers. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4784-4786 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a SiO2/TiO2 high-reflectivity dielectric multilayer mirror specifically suitable for ZnSe-based vertical cavity surface-emitting lasers operating in the green-to-blue spectral region. In the fabrication process, the thickness of each layer has been precisely controlled by using an in situ optical monitoring system. A photo-pumped ZnCdSe/ZnSe/ZnSSe surface-emitting laser has also been demonstrated using the SiO2/TiO2 dielectric multilayer mirrors stacked with the ZnCdSe/ZnSe/ZnSSe structures. Cavity mode emission with a linear polarization has been observed in the direction normal to the surface at 20 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3421-3423 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated Si-doped GaN epitaxial layers on a (0001)-sapphire substrate using a HCl vapor-phase etching technique, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. Three kinds of distinctive etch pits correspond to three different types of threading dislocations, edge, mixed, and screw types. Photoluminescence intensity increases with the decrease in the number of etch pits corresponding to mixed and screw dislocations. The number of etch pits corresponding to edge dislocations, however, did not change. We concluded, therefore, that threading dislocations having a screw-component burgers vector act as strong nonradiative centers in GaN epitaxial layers, whereas edge dislocations, which are the majority, do not act as nonradiative centers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Crystal Growth 124 (1992), S. 616-619 
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Crystal Growth 138 (1994), S. 755-758 
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Graefe's archive for clinical and experimental ophthalmology 218 (1982), S. 118-123 
    ISSN: 1435-702X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Zusammenfassung Bei visueller Halbfeldreizung wurde die Verteilung der durch Umkehr-Schachbrettmusterreize ausgelösten kortikalen Potentiale über der Sehrinde durch Schnelle Fourier-Transformation analysiert. Für das untere Gesichtshalbfeld waren die kortikalen Antworten bei allen Betrachtern bei Ableitung von Oz, für das obere Gesichtshalbfeld bei Ableitung von Pz am größten. Bei Ableitung von Pz wurde für die Antworten des unteren und oberen Halbfeldes eine Phasenverschiebung von ca. 180° beobachtet, wobei die Antworten des unteren Gesichtshalbfeldes größer waren als bei gleichzeitiger Reizung beider Halbfelder. Bei einem Vergleich der Antworten des rechten und linken Gesichtshalbfeldes zeigten 6 von 10 Betrachtern die größten Antworten über der gegenüberliegenden Sehrinde (anatomischer Typ), drei Betrachter über der Mitte (zentraler Typ) und ein Betrachter über der gleichseitigen Sehrinde (Typ paradoxer Lateralisierung). Die von Oz abgeleiteten Antworten zeigten bei Reizung des rechten und linken Halbfeldes nur geringe Phasenverschiebung, ihre Größe betrug etwa die Hälfte jener bei gleichzeitiger Reizung beider Halbfelder. Bei Ableitung über den temporalen Anteilen der Sehrinde war eine beträchtliche Phasenverschiebung der Antworten erkennbar, wobei sich die Summe der Antworten von jener bei gleichzeitiger Reizung beider Halbfelder unterschied. Die Dipol-Theorie der Oberflächenverteilung visuell evozierter kortikaler Potentiale — einschließlich der Potentialumkehr bei Reizung des oberen und unteren Gesichts-Halbfeldes — war auch für Umkehr-Schachbrettmuster anwendbar.
    Notes: Abstract The surface distribution of steady-state cortical potentials (VECP) evoked by visual half-field stimulation was analyzed by using the fast Fourier transform (FFT). For all ten normal subjects, checkerboard stimulation of the lower visual half-field evoked the largest response at electrode location Oz, with stimulation for the upper visual half-field at Pz. Recording at Pz, a phase difference of approximately 180° was observed for cortical potentials evoked by lower and upper half-field stimulation, the response being bigger for upper field than for full-field stimulation. Comparing the VECP elicited by stimulation of the right and the left half-field, six of ten subjects displayed the highest amplitude at the contralateral cortex (anatomical type), three subjects at the midline (central type), and one subject at the ipsilateral cortex (paradoxical lateralization type). At Oz there was little phase difference in the VECP with stimulation of the right and left visual half-field, and the amplitude was about half that for full-field stimulation. However, with the electrode placed at the temporal region of the skull there was a big phase difference of VECP signals; consequently, the sum of the amplitudes did not amount to the amplitude for full-field stimulaion. The dipole theory of scalp distribution of VECP signals was found to be also applicable to conditions of steady-state stimulation, including polarity reversal for upper and lower visual half-field stimulation.
    Type of Medium: Electronic Resource
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